151results about How to "Reduce surface recombination" patented technology

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices / components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and / or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices / systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.

The invention discloses glass powder and silver aluminum paste which comprises the glass powder and used on the positive side of an N-type double-sided solar cell. The silver aluminum paste comprisesconductive silver powder, silicon aluminum alloy powder, the glass powder and an organic carrier, wherein the glass powder is prepared from the following components in percentage by weight: 0-50% of PbO, 0-50% of BiO, 5-15% B2O3, 8-9% of SiO2, 2-3% of Al2O3 and 5-15% of ZnO; the mass ratio of silicon to aluminum in the glass powder is (4-5) to 1; the content of the conductive silver powder is 80wt% to 90wt%; the conductive silver powder comprises nano silver powder and silver alloy powder in a mass ratio of 1 to (18-90). The glass powder not only guarantees the corrosiveness of SiNx, but alsodoes not cause relatively strong metallized composition. The silver aluminum paste prepared by using the glass powder solves the problem of the contradiction between contact resistance and open circuit voltage when the silver aluminum paste is printed on the positive side of an N-type crystalline silicon solar cell.

The invention discloses a film solar cell, and the cell comprises a substrate on which a molybdenum layer, a first alkaline element layer, a light absorbing layer, a second alkaline element layer, a buffering layer and a transparent conductive layer are sequentially disposed. According to the invention, alkali metal elements in the second alkaline element layer and the elements in the light absorbing layer are enabled to react to form a film layer containing the alkali metal elements through the setting of the second alkaline element layer, thereby changing the components of the surface of thelight absorbing layer, further changing the electronic structure of the light absorbing layer through ion exchange, reduces the surface recombination of carriers between layers, enabling the post-preparation processing technology to increase a battery open-circuit voltage, and improving the photoelectric conversion efficiency of the cell.

The invention discloses a polysilicon surface reverse pyramid structure and a preparation method thereof. Back silicon is manufactured by use of different methods, then, a sample is placed in a mixed liquid of hydrogen peroxide and ethanolamine, then washed black silicon is placed in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride for reprocessing, and thus the polysilicon surface reverse pyramid structure is formed. According to the invention, by use of a wet chemical method different from soda acid corrosion, the method can reduce the influence of anisotropy to the maximum degree, and the back silicon with different nano structures is enabled to have a nanometer textured structure with a regular reverse pyramid structure through oxidation corrosion. Compared to a conventional polysilicon textured structure, the polysilicon reverse pyramid light tripping structure is higher in utilization rate of light and lower in reflectivity. Due to the feature of its reverse pyramid structure, compared to high surface recombination of the small yet dense structure of conventional black silicon, the surface recombination of the polysilicon surface reverse pyramid structure is obviously reduced, and the efficiency of a solar battery is higher.