151results about How to "Reduce surface recombination" patented technology

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices / components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and / or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices / systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.

The invention discloses glass powder and silver aluminum paste which comprises the glass powder and used on the positive side of an N-type double-sided solar cell. The silver aluminum paste comprisesconductive silver powder, silicon aluminum alloy powder, the glass powder and an organic carrier, wherein the glass powder is prepared from the following components in percentage by weight: 0-50% of PbO, 0-50% of BiO, 5-15% B2O3, 8-9% of SiO2, 2-3% of Al2O3 and 5-15% of ZnO; the mass ratio of silicon to aluminum in the glass powder is (4-5) to 1; the content of the conductive silver powder is 80wt% to 90wt%; the conductive silver powder comprises nano silver powder and silver alloy powder in a mass ratio of 1 to (18-90). The glass powder not only guarantees the corrosiveness of SiNx, but alsodoes not cause relatively strong metallized composition. The silver aluminum paste prepared by using the glass powder solves the problem of the contradiction between contact resistance and open circuit voltage when the silver aluminum paste is printed on the positive side of an N-type crystalline silicon solar cell.