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505 results about "Diffusion methods" patented technology

What is Diffusion. Diffusion is the passive movement of molecules along a concentration gradient of a higher concentration to a lower concentration. Three major diffusion methods can be identified: simple diffusion, facilitated diffusion, and osmosis.

Method for composite preparation of Ti alloy/TiAl alloy composite plate material by using laminated rolling-diffusion method

The invention discloses a making method of titanium alloy / TiAl composite board, which is characterized by the following: overlapping A (titanium foil) and C (aluminium foil); placing at least one layer B (titanium or titanium alloy foil, titanium or titanium alloy board) on the upper and lower surfaces of overlapped layer or among overlapping layer; setting adjacent layer C to B; adopting three layers or more of A or B as the most outer layer; jacketing; rolling under 20-750 deg.c and 750-1300 deg.c.
Owner:HARBIN INST OF TECH

Grain boundary diffusion method for improving properties of sintered NdFeB magnets

The invention relates to a grain boundary diffusion method for improving properties of sintered NdFeB magnets. The grain boundary diffusion method comprises the following steps of stacking sintered NdFeB magnets and diffusion alloy sheets together and placing in a hot-pressing furnace; vacuumizing the hot-pressing furnace until the vacuum degree reaches a set value, heating the hot-pressing furnace, and when the temperature of the hot-pressing furnace reaches a set value, beginning to exert a pressure and maintaining the pressure and putting the diffused sample into a high-vacuum furnace for annealing, wherein the diffusion alloy sheets are low-melting-point eutectic diffusion alloys and are represented by R-TM, R is one or more of Sc, Y, La, Ce, Pr or Nd and TM is one or more of Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn. Compared with the prior art, the sintered NdFeB magnets modified by the pressure diffusion method, which is provided by the invention, have the advantages of large diffusion depth of a diffusion agent, uniform distribution of grain boundary phases, high coercivity and the like, especially, low-melting-point diffusion alloys designed by the invention are free of expensive heavy rare earth element dysprosium and thus the cost of the raw materials is relatively low, the diffusion temperature is low and the energy consumption in the diffusion process is small.
Owner:SHANGHAI JIAO TONG UNIV

Crystalline silica solar cell chip diffusion method

The invention discloses a crystalline silica solar cell chip diffusion method. Hydrofluoric acid or nitric acid is used for cleaning oil stain on the surface of a silicon chip and etching the surface of the silicon chip, the cleaned and etched silicon chip is placed in a vertical diffusion furnace to be diffused, and the diffusion technology includes following steps of (1) putting into the furnace: putting a quartz boat containing crystalline silica chips into the furnace at a uniform speed; (2) carrying out vacuum-pumping, wherein the pressure in a furnace chamber is 300 +/-50 mTorr after the step of vacuum-pumping; (3) carrying out vacuum leak detection on the furnace chamber; (4) carrying out oxidation in low pressure; (5) carrying out first phosphor source diffusion in low pressure; (6) heating; (7) carrying out second phosphor source diffusion in low pressure; (8) carrying out phosphor impurity propulsion in low pressure; (9) cooling; and (10) taking out form the furnace. By adopting the above crystalline silica solar cell chip diffusion method, the molecule free path of impurity is raised and the uniformity of diffusion of the crystalline silica chip is improved during diffusion, and the conversion efficiency of the crystalline silica solar cell chip is high; and the diffusion method is easy to operate, large in output and low in cost.
Owner:SUZHOU AIKANG PHOTOELECTRIC TECH CO LTD

Grain boundary diffusion method for neodymium-iron-boron magnet

The invention discloses a grain boundary diffusion method for a neodymium-iron-boron magnet. The method comprises the following specific steps: preparing main-phase alloy powders through the neodymium-iron-boron powder metallurgy technique; preparing grain boundary powders of a low-melting-point rare earth alloy through the rare earth alloy powder metallurgy technique; evenly mixing the main-phase alloy powders and the grain boundary powders of the low-melting-point rare earth alloy according to a certain proportion; carrying out orienting compression in a magnetic field to prepare a neodymium-iron-boron magnet blank, and carrying out sintering of the neodymium-iron-boron magnet blank for 3 to 5 hours at a temperature of 1,000 to 1,100 DEG C, so as to prepare a sintered neodymium-iron-boron magnet; coating the magnet surface with a low-melting-point rare earth alloy layer through electrophoresis; and placing the magnet in a vacuum sintering furnace for secondary tempering heat treatment. The method provided by the invention has the beneficial effects that the coercivity of the magnet is improved while the residual magnetism is hardly reduced; the diffusion depth of heavy rare earth elements in the magnet can be improved; the uniformity of the magnet after the diffusion is improved; and the method is applicable for batch production.
Owner:ZHEJIANG DONGYANG DMEGC RARE EARTH MAGNET CO LTD

Method for producing Sm-Fe-N permanent magnet alloy powder by reduction diffusion

A process for preparing permanent-magnet Sm-Fe-N alloy powder by reduction-diffusion method includes such steps as choosing and pretreating raw materials, proportioning, mixing, thermal reducing and diffusion alloying at 760-860 deg.C by use of Ca and CaH2 as reducer to obtain Sm-Fe alloy and by-products, chemical separating, dewatering Sm-Fe alloy powder, nitrizing, and preparing anisotropic Sm-Fe-N magnet. Its advantages are low reaction temp, less loss of Sm and high performance.
Owner:UNIV OF SCI & TECH BEIJING

Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method

The invention relates to technology for manufacturing a selective emitter junction solar cell by a printed phosphorous source one-step diffusion method. The method comprises the following steps of: cleaning and texturing a silicon wafer, performing screen printing of phosphorous-containing nano Si slurry, drying at the temperature of between 200 and 350 DEG C for about 20 minutes, and removing the solvent to obtain a phosphorous-containing oxidation layer with the thickness of 30 to 100nm; implementing BOE and RCA cleaning to remove 70 percent of surface phosphorous slurry before diffusion; putting the silicon wafer into a diffusion furnace, adding a POCL3 air source, heating to between 800 and 1,000 DEG C, forming re-diffusion at a grid line of the phosphorous-containing nano slurry on the silicon wafer to form a higher surface concentration-heavily doped region, and forming a shallow diffusion region in other areas. By adopting the screen printing of the phosphorous-containing nano slurry, the phosphorous-containing nano slurry is heated at high temperature for diffusion, forms the heavily doped region at a contact position with the grid line and forms a lightly doped region in other areas. The technology has the efficiency of over 18.5 percent on the premise of better controlling the diffusion uniformity.
Owner:TRINA SOLAR CO LTD

Preparation method of cobalt and oxide embedded porous carbon absorbing material

The invention relates to a preparation method of a cobalt and oxide embedded porous carbon absorbing material, which belongs to the technical field of a microwave absorption material. The method adopts a metal organic skeleton ZIF-67 as a precursor, and obtains the preparation method of the nanoporous carbon composite absorbing material embedded with Co / Co3O4 by one-step carbonization. The metal organic skeleton ZIF-67 powder is synthesized by a diffusion method and a coprecipitation method, and the ZIF-67 powder is calcined under inert atmosphere of 500-800 DEG C, after the temperature is lowered to a certain temperature, the powder is taken out and air cooled, Co is oxidized to Co3O4, after being completely cooled, the powder is ground, and the black powder is collected to obtain the Co / Co3O4 embedded nanoporous carbon composite absorbing material with excellent absorbing properties. The process not only has a simple process, but also has low raw material cost, short time-consuming period, no need for any subsequent processing technology and no complicated synthesis equipment, and provides conditions for practical production applications.
Owner:UNIV OF SCI & TECH BEIJING +1

Crystalline silicon solar cell and diffusion method thereof

The invention discloses a crystalline silicon solar cell and a diffusion method thereof. The method comprises the following steps of: putting a silicon chip into a diffusion furnace and raising the temperature to 780-800 DEG C; introducing a preset amount of small nitrogen, oxygen and large nitrogen into the diffusion furnace through a diffusion furnace tube and keeping the internal temperature of the diffusion furnace at 780-800 DEG C for 15-20 minutes; introducing a preset amount of oxygen and large nitrogen into the diffusion furnace through the diffusion furnace tube and raising the internal temperature of the diffusion furnace to 850-870 DEG C for 10-18 minutes; and cooling the diffusion furnace and taking the silicon chip out, wherein the gas flow in the diffusion furnace tube is constant in the entire diffusion process. The depth of a PN junction of a solar cell produced with the method is small, the square resistance is more uniform, and the conversion efficiency of the solar cell is increased.
Owner:JETION SOLAR HLDG

Method for preparing highly coercive neodymium-iron-boron magnets with heavy rare earth Dy

The invention belongs to the field of materials and particularly relates to a method for preparing highly coercive neodymium-iron-boron magnets with heavy rare earth Dy. The method includes: introducing a heavy rare earth diffusion source into pressed green blank in advance, and dipping the pressured green blank into a heavy rare earth complex organic solvent. On the one hand, organic coating of the surface of power particles is achieved to prevent powder from being oxidized, on the other hand, through decomposition of the heavy rare earth organic solvent during the sintering and heat treatment process, elements C and H evaporate into the gas, residual medium and heavy rare earth elements Tb/Dy spread to the surface of main-phase crystal particles to achieve magnetic hardening of the surface of the main-phase crystal particles, and magnetic coercivity is improved; in the method, the heavy rare earth diffusion source is added to the surface of the non-compact green blank in a dipping manner, multiple diffusion channels and deep diffusion depth are achieved, the diffusion methods of coating, steaming and rolling and the like on the sintered compact magnet surface in the conventionaldiffusion process are improved, extra long time high temperature diffusion treatment is not needed, and simple process and high diffusion efficiency are achieved.
Owner:NANJING UNIV OF SCI & TECH

Diffusion method for solace cell with polycrystalline silicon selective emitter

The invention discloses a diffusion method for a solar cell with a polycrystalline silicon selective emitter. The diffusion method includes the following steps: firstly, placing a silicon chip on which a doping agent grows into a diffusion furnace and raising the temperature to 750-800DEG C, wherein the environment in the furnace is N2 with the flow being 10-30slm; secondly, after the temperature is stabilized, uniformly raising the temperature in each temperature zone in the furnace to 850-900DEG C, introducing 0.2-2slm of N2 carrying trichloroethane, 1-5slm of O2 and 10-30slm of N2 while raising the temperature so as to realize heavy doping and controlling the heavily-doped sheet resistance between 30 and 60 omega/m<2>; thirdly, reducing the temperature of each temperature zone to the diffusion temperature of 820-840DEG C and introducing N2 carrying POCl3 for diffusing; fourthly, reducing the temperature of each temperature zone to 780-800DEG C, stopping introducing the N2 carrying the POCl3 so as to realize shallow doping, wherein the propulsion time is 10-25minutes and controlling the shallow-doped sheet resistance between 70-120 omega/m<2>; and fifthly, cooling the silicon chip, taking out the silicon chip and finishing the diffusion process. According to the diffusion method disclosed by the invention, the diffusion of a doping agent is realized at high temperature and the heavy doping and shallow doping of the selective emitter are realized; and meanwhile, the gettering of a polycrystalline silicon is realized, so that the conversion efficiency is greatly increased.
Owner:CSI CELLS CO LTD +1

Manufacturing method of crystalline silicon solar cell

The invention discloses a manufacturing method of a crystalline silicon solar cell. The manufacturing method includes the following steps that: surface treatment is performed on a cleaned silicon wafer, so that a concavo-convex texturized surface can be obtained; a PN junction is formed on the silicon wafer through adopting a diffusion method; the silicon wafer periphery of the formed PN junction is etched, so that a redundant diffusion layer can be removed, and a film body is deposited on the front surface and the back surface of the silicon wafer respectively, and local film body portions are removed through adopting an etching method, so that dot-shaped or stripe-shaped structures which uniformly expose the silicon wafer can be formed on the film bodies; a front surface conductive paste and a back surface conductive paste are printed on the front surface and the back surface of the silicon wafer respectively; and sintering is performed, so that the solar cell can be obtained. According to the manufacturing method of the invention, the etching method is adopted for the film bodies on the solar cell, so that the local film body portions are removed through etching, and the non-burn-through conductive pastes are printed on the locally-etched film bodies, and therefore, direct electric contact between local metal and silicon can be realized, and the film bodies will not be damaged in high-temperature sintering of the conductive pastes as much as possible, and the open-circuit voltage of the solar cell can be increased, and the contact resistance of the solar cell can be reduced, and therefore, the conversion efficiency of the solar cell can be improved.
Owner:SICHUAN YINHE STARSOURCE TECH CO LTD

Melittin complex nanometer granule for oral dosing and preparation method thereof

The invention belongs to the technical field of medicines and discloses melittin complex nanoparticles for oral administration and a preparation method thereof. Water-soluble melittin and an amphiphilic substance are dissolved into a hydrosolvent A to form a hydrophobic protein ion pairing complex; the complex and a suitable polymer material are dissolved into a nonaqueous solvent B; an emulsion solvent diffusion method in a liquid phase is adopted to wrap the complex into the polymer material; and microparticles with the particle diameter between 10 and 1000nm are formed after the solvent is volatilized. The hydrosolvent A is distilled water, double distilled water, deionized water, physiological saline, or a phosphate buffer solution or an acetate buffer solution or a Tris buffer solution with the pH value of between 1 and 11; and the nonaqueous solvent B is a single or mixed solvent of alcohol, acetone, ethyl acetate, methylene dichloride, chloroform and dimethyl sulfoxide. The complex has high fat solubility, and the encapsulation rate of the nanoparticles is more than 90 percent. The preparation process is mild and can assure the biological activity of medicines. The preparation method is suitable to prepare oral administration preparations.
Owner:SHENYANG PHARMA UNIVERSITY
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