The invention discloses a method for forming an inverted-
pyramid porous surface nanometer texture on
polycrystalline silicon and a method for manufacturing a short-wave reinforcing
solar cell. The method for forming the inverted-
pyramid porous surface nanometer texture on the
polycrystalline silicon and the method for manufacturing the short-wave reinforcing
solar cell are suitable for the technical field of solar photovoltaic batteries. By means of a
metal catalytic
chemical corrosion method, a nanometer porous
surface structure is formed on the
polycrystalline silicon through HF, AgNO3, H2O2, HNO3 and other solutions, then partial samples are placed in a NaOH corrosive liquid with the concentration of 0.1-1% for
surface modification of a nanometer
inverted pyramid, a nanometer
inverted pyramid silicon structure is formed, and the
micro structure appearance of the nanometer
inverted pyramid silicon structure is even and smooth, so that service life of a few effective charge carriers is greatly prolonged, and ultimately, in the nanometer texture
surface structure, by means of changes of the thickness of a
silicon nitride layer in the
solar cell manufacturing process, a nanometer inverted
pyramid silicon solar photovoltaic
cell which is low in
surface reflection rate and high in short wave spectrum response is prepared. The method for forming the inverted-pyramid porous surface nanometer texture on the polycrystalline silicon and the method for manufacturing the short-wave reinforcing solar
cell are simple in process, convenient to operate, low in cost and suitable for industrial production.