524 results about "Wire array" patented technology

Transparent conductive electrodes, optoelectronic apparatus, optoelectronic devices and methods for making such electrodes, apparatus and devices are disclosed. The transparent conducting electrode (TCE) includes a layer of transparent electrically conducting polymer material and an array of electrically conductive wires distributed across the layer of transparent electrically conducting polymer material. The TCE may be made by distributing an array of conductive wires across a conductive polymer layer and attaching polymer layer to the wire array. An optoelectronic apparatus may comprise an active layer in electrical contact with the TCE. An optoelectronic device may incorporate an active layer disposed between two electrodes, at least one of which is the TCE. An optoelectronic device may be made by disposing an active layer between a base electrode and a TCE and attaching all three together.

A volumetric tissue ablation apparatus includes a probe having a plurality of wires journaled through a catheter with a proximal end connected to the active terminal of a generator and a distal end projecting from a distal end of the catheter. The probe wire distal ends are arranged in an array with the distal ends located generally radially and uniformly spaced-apart from the catheter distal end. A conductor connected to the return terminal of the generator is located relative to the probe wire array to form a closed electrical circuit through tissue to be ablated. Preferably, the probe wire array includes 10 wires, each formed in an arch from the catheter distal end. The conductor can be either a conventional ground plate upon which the tissue is supported, or a conductor wire extending through the probe and electrically insulated from the probe wires.

The invention provides a nano generator and a manufacturing method thereof. The nano generator comprises a base, a first electrode, a zinc oxide nano wire array, a macromolecule insulating layer and a second electrode, wherein the first electrode is arranged on the base; the zinc oxide nano wire array vertically grows on a first electrode layer; the macromolecule insulating layer is coated on a zinc oxide nano wire array layer; the zinc oxide nano wire array layer covers the zinc oxide nano wire array, and the second electrode is arranged on the macromolecule insulating layer; and the first electrode and the second electrode are used as a voltage output pole and a current output pole of the nano generator. The nano generator disclosed by the invention adopts a unique structure so that the electric performance output and the stability are effectively improved.

The present invention discloses a mixed-type heterojunction thin-film solar cell structure and a method for fabricating the same. Firstly, a conductive substrate and a template are provided, and the template has a substrate and an inorganic wire array formed on the substrate. Next, a conjugate polymer layer is formed on the conductive substrate. Next, the inorganic wire array is embedded into the conjugate polymer layer. Next, the substrate is separated from the inorganic wire array. Then, an electrode layer is formed over the inorganic wire array and the conjugate polymer layer. The solar cell structure of the present invention has advantages of flexibility, high energy conversion efficiency and low fabrication cost.

A volumetric tissue ablation apparatus includes a probe having a plurality of wires journaled through a catheter with a proximal end connected to the active terminal of a generator and a distal end projecting from a distal end of the catheter. The probe wire distal ends are arranged in an array with the distal ends located generally radially and uniformly spaced-apart from the catheter distal end. A conductor connected to the return terminal of the generator is located relative to the probe wire array to form a closed electrical circuit through tissue to be ablated. Preferably, the probe wire array includes 10 wires, each formed in an arch from the catheter distal end. The conductor can be either a conventional ground plate upon which the tissue is supported, or a conductor wire extending through the probe and electrically insulated from the probe wires.

The invention discloses a method for preparing a titanium dioxide nano-wire array film. The method comprises the following steps: mixing hydrofluoric acid, nitric acid and deionized water to prepare an acid wash; adding melamine and nitric acid into a hydrogen peroxide solution to obtain a reaction solution; washing the surface of a metal titanium plate by the acid wash to be immersed in the reaction solution to react for 60 to 72 hours at a temperature of between 60 and 90 DEG C; and washing the reacted titanium plate by the deionized water to be dried, and insulating the titanium plate for 1 to 2 hours at a temperature of between 350 and 550 DEG C. The method for preparing the titanium dioxide nano-wire array film does not need a template or a catalyst, and has the advantages of simpleness and feasibility, low cost, pure film, regular size arrangement, perfect crystallization, large specific surface area and firm combination with a substrate, and the titanium dioxide nano-wire array film has wide application in photocatalysis, photoelectrocatalysis, thin-film solar cell, gas sensor, cold cathode electronic emission and other fields.

The invention discloses an organic-inorganic hybridization solar battery which comprises a metal backing electrode, an n-type silicon substrate layer, a silicon nanometer wire array and a battery positive electrode and also comprises a p-type cavity transmission shell layer, wherein the p-type cavity transmission shell layer is a conjugated organic matter semiconductor thin film; the metal backing electrode is arranged on the lower surface of the n-type silicon substrate layer; the silicon nanometer wire array is arranged on the upper surface of the n-type silicon substrate layer; the surfaceof a silicon nanometer wire in the silicon nanometer wire array is covered by the layer of p-type cavity transmission shell layer; and the battery positive electrode is arranged on the p-type cavity transmission shell layer. As a three-dimensional radial p-n junction hybridization structure formed by the silicon nanometer wire array and the conjugated organic matter is adopted in the organic-inorganic hybridization solar battery, on one hand, the absorption of light is increased, the usage amount of silicon is reduced, the purify requirement on the silicon is reduced, on the other hand, the transmission range of current carriers is shortened, the problem that the current carriers are easy to combine is reduced, and the photoelectric conversion efficiency is improved.

The invention discloses a transparent flexible surface enhanced Raman active substrate and a preparation method thereof. The preparation method of the substrate comprises the following steps: taking a transparent flexible material such as polybutylene terephthalate (PET) plastics as a substrate, performing O2 plasma etching to form a nano wire array, loading gold, silver and other precious metal nanoparticles on the nano wire surface by virtue of a coating technology, and forming a three-dimensional nanometer structure array. The transparent flexible surface enhanced Raman active substrate provided by the invention is uniform in morphology and controllable in structure and has high-density electromagnetic hot spots in three-dimensional distribution. Therefore, the substrate has high sensitivity and reproducibility. The PET plastic film is high in flexibility and high in transparency, and incident laser and Raman scattered light easily penetrate through the substrate at low loss, so that the substrate can be used for in-situ detection of to-be-detected objects. The preparation method provided by the invention is simple in process, large-area preparation is easily realized, even roll-to-roll production process is permitted, and the cost is low.

The invention provides a preparation method of a surface-enhanced Raman scattering substrate of a metal particle array. The preparation method comprises the following steps of: preparing a porous silicon nanometer wire array (PSNWA) as a substrate material through a metal-assisted chemical corrosion method; reducing metal ions in a metal salt solution to elementary substance through an impregnation-reduction method, and obtaining the surface-enhanced Raman scattering substrate after uniformly depositing the elementary substance on the surface of the PSNWA in a nanometer particle manner; and inducing a substance to be detected into an active substrate surface through an infiltration or titration method, namely carrying out Raman spectrum detection. The preparation method provided by the invention has the advantages of low cost, simple process, simplicity and convenience in operation, high sensitivity of SERS (Surface-Enhanced Raman Scattering) signals, and good repeatability; and an SERS light spectrum has very good stability and repeatability. The invention provides a molecule detection and trace quantity analysis method with high speed, high sensitivity and high reliability. The preparation method provided by the invention needs extremely less sample amount, is suitable for various liquid samples, and has wide application prospects of rapid identification of clinical biological molecules, trace quantity chemical substance detection, biological sample analysis and the like.

The invention provides a multi-wire array-laser three-dimensional scanning system and a multi-wire array-laser three-dimensional scanning method. In the system, through a programmable gate array FPGA, accurate synchronization and logic control of the multi-wire array-laser three-dimensional scanning system can be realized. A wire laser array is used as a projection pattern light source. Through the FPGA, trigger signals are sent to a stereo vision image sensor, an inertial sensor and the wire laser array. An upper computer receives an image pair shot by the stereo vision image sensor, and carries out coding, decoding and three-dimensional reconstruction on a laser wire array pattern in the image pair. The three-dimensional reconstruction and three-dimensional characteristic point matching and aligning are performed on a characteristic point of a measured object surface. A mixing sensing positioning technology is used to carry out prediction and error correction on matching calculation, which is used for registration and splicing of time-domain-laser three-dimensional scanning data. Simultaneously, measurement error grade assessment is performed in real time and an assessment result is fed back to an error feedback controller so that an adjusting indication is obtained. Therefore, laser three-dimensional scanning with low cost, high efficiency, high reliability and high precision is realized.

The invention discloses a method for selectively etching silicon nano-wire according to defects in existing technology and market requirement, comprising: a) using ''up to down'' standard microelectronic manufacturing process to open a window on a silicon sheet; b) using ''up to down'' non-electroplating chemical deposition method to etch silicon nano-wires on surface of the silicon sheet with opened window. Compared to the existing technology, the method for selectively etching silicon nano-wire according to the invention can not only make any expected image, but also obtain uniformly arranged silicon nano-wire array with regular size; also it has the advantages of simple manufacturing process, low costs, suitable for batch production, to realize industrial manufacture of silicon nano-wire electrode, and provide a scheme manufacturing nano-electric element based on a plurality of nano-wires.

A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.

In a cutting method by a wire saw, in which a wire A at a wire array wound around work rollers 10 is made to reciprocate or travel in one direction at a high speed and numerous pieces of wafers are cut out in abutment of a workpiece B against the wire array, a receiving member 27 of a cassette type having numerous support wires 34 arranged at the same pitch as that of the wire at the wire array is disposed at a position immediately under the wire array for cutting the workpiece B; and wafers b cut out of the workpiece B by the wire A are contained in separation one from another between the support wires 34 in the receiving member 27. Thus, the wafers can be prevented from adhering to each other during a cutting operation, thus to be accurately cut, and further, the wafers can be prevented from being cracked during the cutting operation, thus to be efficiently separated one from another, so as to enhance wafer cleansing performance.

The system incorporates wire deflection, taut wire detection for perimeter security applications. Generally, the system of the invention provides intrusion detection by an internal mechanism. The internal mechanism can detect wire deflection in any direction. In turn, given a sufficient amount of wire deflection, a security system is signaled. However, the force required to sufficiently deflect the wires is high enough so as to minimize nuisance alarms. The internal mechanism is generally held within a structure so that it is protected from tampering. As such, the internal mechanism is also kept separate from the wire array so that it is protected from attempts by an intruder to isolate the wire array.

Provided are a nano wire grid polarizer and a liquid crystal display apparatus. The nano wire grid polarizer transmits light having a first polarization and reflects light having a second polarization. The polarizer includes a dielectric layer, and a plurality of nano wire array layers, each of the plurality of nano wire layers comprising a plurality of nano wires which are arranged in parallel to each other and spaced at regular intervals. The plurality of nano wire array layers are stacked to be spaced apart one another.

The invention discloses a method for preparing a thin-film solar photovoltaic cell with a copper indium gallium selenide (CIGS) nano wire array structure. The method comprises the following steps of: growing a large-area cuprous sulfide or copper sulfide nano wire array by adopting a gas-solid reaction method, and converting the cuprous sulfide or copper sulfide nano wire array into a CIGS nano wire array by physical vapor deposition and heat treatment methods. The component, the phase structure and the energy band structure of the semiconductor nano wire array can be regulated by controlling the categories of deposition elements, the deposition sequence, the deposition process, post treatment and the like, so that solar photovoltaic cells with different structures and properties are prepared. Through the cell, light reflection is reduced, light absorption is increased, the probability of producing current carriers can be increased, the probability of recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is greatly improved. The method is low in cost, the preparation processes are controllable, the prepared nano wire array is uniform in structure distribution, and preparation of the nano structural thin-film solar photovoltaic cell with large area and high photoelectric conversion efficiency can be realized.

The invention field emitting cathode is a metal nano wire array which grows on metal base of planar electrode and the metal is same as the base's. The thickness of base is 1 micro m to 0.5 mm, the diameter of nano wire is 20-200 nm, the length is 100 to 500 nm. The producing steps are: to select modular board with nanometer holes according to size requirement of display unit, to make a metal filmelectrode on a surface of the selected modular board by evaporating and electroplating, to electrochemical grow metal nanometer wire array in the nanometer holes of nanometer modular board, to clean and dry the dissolved part or whole modular to expose metal nanometer wires. It can be used to cathode-ray tube and plate display, and has low beginning field strength for field emitting cathode, highcurrent density and low cost.

A fold down seat back or seat bottom has at least one ergonomic support device in it. A traction cable is operatively engaged at one end with the ergonomic support device to actuate it. The fold down seat back includes a rotating cable tension unit and a fixed torsion bar. The rotating member moves relative to the fixed member when said fold down seat back is folded up. The traction cable is comprised of a sleeve having a first end and a second end and a wire having a first end and a second end. The wire is disposed to slide axially through the sleeve. The first sleeve end is attached to the rotating cable tension unit. The wire end is attached to the fixed torsion bar. The wire end may be attached to the torsion rod with a pulley. These attachments of the sleeve end and the wire end cause the wire to be drawn axially through the sleeve when the seat back is folded up, extending or rotating an ergonomic support, and cause the wire to be relaxed when the seat back is folded down, flattening the ergonomic support. The ergonomic device may be a bolster, a wire array, a head rest, an arching pressure surface or a scissors lumbar support.

The invention relates to a method for etching gallium nitride nano-wire array by using a dry method, which is characterized in that nano-particle lattice of metal Ni is taken as a mask film and the nano-particle lattice of Ni is manufactured by anodic alumina; in the manufacture of the nano-particle lattice of the GaN, first, a layer of metal As is deposited on a GaN template; second, vesicular anodic alumina is generated by adopting an electrochemical method; then, an electron beam evaporates a layer of metal Ni layer and the anodic alumina is removed by alkaline liquor. As pore arrangement and aperture size of the anodic alumina are uniform, the nano-particle lattice of the metal Ni can be obtained on the GaN template. Then, the template is placed in inductively coupled plasma or a reaction chamber reacting ion etching to be etched; at last, Ni nano-particle is removed by acid to obtain the nano-wire array of GaN. The method provided by the invention is simple and easy and the manufactured nano-wire array of GaN is applicable to the manufacture of photoelectric devices such as LED or LD.

The invention discloses a preparation technology of a silicon micro wire array. The technology comprises the following steps that 1) the surface of a silicon wafer which is cleaned by washing is spin-coated with a photoresist resisting etching of a hydrofluoric acid; 2) an UV exposure technology is used to expose the silicon wafer obtained in the step 1); 3) the silicon wafer obtained in the step 2) is developed; 4) a Ti film and an Au film are deposited successively in a physical deposition method by taking the silicon wafer obtained in the step 3) as a substrate; 5) the silicon wafer obtained in the step 4) is immersed into an acetone solution and shaken for 1-3 min, the photoresist is removed incompletely, the size of the photoresist is reduced, and it is ensured that part of the bottom surface of the silicon substrate is not covered by the photoresist or metal completely; 6) the silicon wafer obtained in the step 5) is immersed into an HF and H2O2 mixed aqueous solution, and processed in an enclosed manner for 6-24 hours in the low-temperature environment of 3-15 DEG C; and 7) the photoresist and metal are removed from the silicon wafer obtained in the step 6). According to the preparation technology, the silicon micro wire array of large spacing and large length-to-diameter ratio can be obtained, and problems in the prior art are solved.

The invention discloses a method for preparing a sequentially arranged bent silicon nano-wire array. The method comprises the following steps of: 1) placing etching solution in a hydrofluoric acid corrosion resistant vessel, cleaning a crystal orientation mono-crystalline silicon wafer (111), immersing in the etching solution, and sealing the vessel, wherein the etching solution consists of silver nitrate, hydrofluoric acid and deionized water, the concentration of silver ions in the etching solution is between 0.01 and 0.04mol / L, and the concentration of the hydrofluoric acid is between 1 and 5mol / L; and 2) placing the vessel in a constant-temperature water bath to ensure the silicon wafer reacts with the etching solution, and taking the silicon wafer out after the reaction is completed to obtain the sequentially arranged bent silicon nano-wire array on the surface of the silicon wafer. In the method, the metal ion assisted solution etching technology and selective effect of different crystal orientations of the silicon wafer are organically combined so as to prepare the sequentially arranged bent silicon nano-wire array on the surface of the silicon wafer. The method is simple and convenient and has mild reaction conditions, and by the method, the sequentially arranged bent silicon nano-wire array material can be prepared in one step at room temperature.

The invention discloses a method for preparing a photo-electrode, which comprises the steps of: firstly preparing a wide band-gap semiconductor nanotube or nano-wire array on a conductive substrate, and then filling narrow band-gap semiconductor nano particles into the wide band-gap semiconductor nanotube or nano-wire array by the close-spaced sublimation method in presence of decompression, thereby obtaining a narrow band-gap semiconductor and a wide band-gap semiconductor heterojunction film photo-electrode. The narrow band-gap semiconductor nano particles strengthen the response of a wide band-gap semiconductor nano array film to visible lights, the absorption of the photo-electrode to the visible lights is greatly enhanced, and therefore the photoelectric conversion efficiency is improved. Furthermore, equipment required by the close-spaced sublimation method is simple and easy for operation and has low production cost, therefore, the method for preparing the photo-electrode is suitable for being popularized and applied widely.

The invention discloses a preparation method of a semiconductor nano-wire-based organic / inorganic composite solar cell, belonging to the technical field of new energy resources. The method is characterized by comprising the following steps: preparing nano silicon with good light absorption performance in a visible light area by an electrochemical corrosion or hydrothermal corrosion technology; growing a zinc oxide or titanium dioxide or cadmium selenide nano-wire array on the nano silicon substrate by a high-temperature chemical vapor deposition method or low-temperature liquid phase chemical method; spinning poly-3-hexylthiophene (P3HT) or poly[2-methoxy-5-(2-ethyhexyloxy)-1,4-p-phenylene vinylene] (MEH-PPV) or poly(3-octylthiophene) (P3OT) on the nano-wire array to form a three-layer composite structure system; and finally preparing a magnesium fluoride or calcium fluoride surface anti-reflection film and metal film electrode to form a solar cell device. The process disclosed by the invention is simple, the operation is simply and easily implemented, the preparation conditions are mild, the repetition rate reaches 100%, and the prepared organic / inorganic composite material system is an important material for manufacturing a full-silicon-based solar cell device in the future.

The invention provides a composite structure based on metamaterials and semiconductor low dimension quantum materials. The composite structure based on the metamaterials and the semiconductor low dimension quantum materials is composed of a substrate (1), a buffer layer (2), the semiconductor low dimension quantum materials (3), semiconductor interlayer materials (4) and the metamaterials (5). The metamaterials (5) is in the structure of cycle-assigned metal wire arrays, cycle-assigned metal opening resonance ring arrays or a fishing net. The thickness of the semiconductor interlayer materials (4) is 5 to 50 nanometers. According to the composite structure based on the metamaterials and the semiconductor low dimension quantum materials, a light gain property of the semiconductor low dimension quantum materials and a high speed response property of semiconductor materials to a light signal are simultaneously used, and the composite structure based on the metamaterials and the semiconductor low dimension quantum materials has the dual functions of compensating metamaterial wastage and regulating and controlling metamaterial properties. Under the condition that control light or pump light is additionally arranged, according to the composite structure based on the metamaterials and the semiconductor low dimension quantum materials, the functions of full light opening and closing or full light wavelength conversion can be achieved, and the composite structure based on the metamaterials and the semiconductor low dimension quantum materials has the advantage of being large in extinction ratio.

The invention discloses a preparation method of a large-area perovskite micro-nano wire array and an application thereof in a photoelectric detector. Under environment conditions, a highly-oriented large-area micro-nano wire array can be obtained by a simple knife coating mode or a roll-to-roll printing technology. The length of an obtained micro-nano wire reaches the millimeter level, the width is in the range from 100 nanometers to 5 micrometers, and the micro-nano wire array is arranged in a highly-oriented manner. The preparation method is simple, the cost is low, and the highly-oriented large-area micro-nano wire array can be used for preparing the photoelectric detector.