193 results about "Cuprous sulfide" patented technology

The invention discloses a method for preparing a thin-film solar photovoltaic cell with a copper indium gallium selenide (CIGS) nano wire array structure. The method comprises the following steps of: growing a large-area cuprous sulfide or copper sulfide nano wire array by adopting a gas-solid reaction method, and converting the cuprous sulfide or copper sulfide nano wire array into a CIGS nano wire array by physical vapor deposition and heat treatment methods. The component, the phase structure and the energy band structure of the semiconductor nano wire array can be regulated by controlling the categories of deposition elements, the deposition sequence, the deposition process, post treatment and the like, so that solar photovoltaic cells with different structures and properties are prepared. Through the cell, light reflection is reduced, light absorption is increased, the probability of producing current carriers can be increased, the probability of recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is greatly improved. The method is low in cost, the preparation processes are controllable, the prepared nano wire array is uniform in structure distribution, and preparation of the nano structural thin-film solar photovoltaic cell with large area and high photoelectric conversion efficiency can be realized.

A method for manufacturing the memory device by plasma decomposition of sulfur dioxide. A first copper electrode having a surface is provided. The surface of the first copper electrode may be made amorphous. A copper sulfide layer, CuxS, where 1≦x≦2, is disposed on the copper surface by decomposing sulfur dioxide in an ambient containing excess hydrogen. The copper sulfide layer may be is cuprous sulfide or cupric sulfide. A second copper electrode is coupled to the copper sulfide layer.

The invention discloses a p-n knot nano composite material in a special structure and a preparation method and application thereof, and belongs to the technical field of preparation of inorganic non-metal nano materials, environmental protection and solar energy utilization. The p-n knot material is a surface-modified (partially wrapped) nanoscale large energy gap n type semiconductor material (titanium dioxide, zinc oxide, stannic oxide and the like) by taking a low energy gap p type semiconductor material (cuprous oxide, cuprous sulfide, cadmium sulfide and the like) in a low-dimensional nano structure (spherical, polyhedral, linear and the like) as the inner core. By adopting a method of controlling hydrolysis of a metal salt, a lot of heterogeneous p-n knots are constructed on the surface of low energy gap p type semiconductor material in the low-dimensional nano structure. The p-n knot nano composite material can be directly used for solving the problem of decomposition of organic matters under visible lights, deactivation of microbial pathogens and efficient utilization of solar energy, particular the problem of low electron-hole separation efficiency of a single-component photocatalyst material.

The invention discloses a sulfur-doped three-dimensional porous cuprous oxide nano-material and application thereof to electrochemical hydrogen evolution reaction. A cuprous sulfide nano-rod is synthesized on three-dimensional copper foam as a precursor mainly by virtue of a normal temperature impregnation method, and the sulfur-doped porous cuprous oxide nano-material is obtained in an electrochemical preparation process. The sulfur-doped three-dimensional porous cuprous oxide nano-material is mainly applied to electrochemical hydrogen evolution, the catalytic activity is detected by adopting a linear scanning curve (polarization curve), and the stability of the material is tested by virtue of a cyclic voltammetry curve. According to the sulfur-doped three-dimensional porous cuprous oxide nano-material, a porous Cu2OxS(1-x) nano-structure is synthesized by a method which is convenient to operate to enlarge the specific surface area of the material, copper is combined with oxygen to collaborate active sites around the copper and improve the adsorbability of the copper for hydrogen, and anionic sulfur is further doped to greatly improve the catalytic activity of the material, improve the catalysis efficiency of electrochemical hydrogen evolution and effectively improve the stability of the catalyst.

The invention discloses a sizing agent for manufacturing a cuprous-sulfide-based counter electrode in a sensitized solar cell. The sizing agent comprises the following materials in proportion by weight: 0.01-85% of cuprous sulfide, 0-80% of complexes, 0-25% of additive and the balance of solvent, wherein the complexes is at least one selected from a carbon material or a conducting polymer. The cuprous-sulfide-based counter electrode in the invention is simple and convenient in preparation, superior in the performance, good in the stability, and suitable for the commercial quantum dot sensitized solar cell.

The invention discloses a light absorption layer of a copper indium gallium selenide (CIGS) solar cell and a manufacturing method thereof. The method comprises the following steps of: forming a cuprous sulfide layer by utilizing a sputtering method; forming a plurality of CIGS stacking layers by utilizing a CIGS sol-gel solution in a soaking, rotating, printing or spraying mode by matching with pre-drying; then fusing the cuprous sulfide layer and the CIGS stacking layers to form a CIGS light absorption layer by utilizing quick heating heat treatment so as to form the CIGS solar cell having high photoelectric conversion efficiency and high light absorbancy.

The invention discloses a preparation method of cuprous sulfide powder and the cuprous sulfide powder. The preparation method of the cuprous sulfide powder comprises the following steps: allowing cuprous oxide and a sulfurizing agent solution to react and filtering to obtain a cuprous sulfide precursor; calcining the cuprous sulfide precursor in vacuum to obtain the cuprous sulfide powder. According to the preparation method of the cuprous sulfide powder, the cuprous oxide and the sulfuring agent react, the cuprous sulfide precursor is prepared by adopting a precipitate transformation method and is calcined in vacuum to prepare the cuprous sulfide powder. The method is rich in cheap raw materials, low in cost, simple in preparation process, mild in condition, good in controllability, high in production efficiency, easy to realize industrialization, free of pollution and wide in development prospect in the field of preparation of superfine powder; the prepared cuprous sulfide powder is high in purity, good in crystal form, good in dispersity, stable in structure, easy to coat, dope, sinter and the like, and applicable to the fields of solar batteries, seawater batteries, sensors, catalysts and the like.

The invention discloses a nano cuprous sulfide modified monolithic column material and a preparation method thereof. First a hybrid monolithic column skeleton is synthesized, certain thickness of cuprous oxide nanocubes are physically adsorbed on the surface, more stable cuprous sulfide can be obtained by processing with a sodium sulfide solution, and then a nano cuprous sulfide modified monolithic column can be obtained. The monolithic column prepared by the method has the characteristics of easy manufacture and high permeability of a conventional monolithic column, by introduction of nano cuprous sulfide, specific adsorption sites can be provided, and the nano cuprous sulfide has a strong adsorption effect on carboxyl, amino and nitrogen heterocyclic structures, and significantly improves the material specific surface area. The material is prepared into a capillary solid-phase extraction column to achieve high capacity concentration of kanamycin sulfate in milk in alkaline conditions.

The invention relates to a preparation method for a reduced-oxidized graphene / cuprous sulfide hybrid structure. The preparation method comprises the following steps: mixing preprocessed oxidized graphene, oleylamine and metal salt in proportion; heating and removing water under the protection of nitrogen, and meanwhile, mixing and dissolving powdered sulfur and hot oleylamine under the protection of nitrogen; injecting sulfur-oleylamine solution into a solution and reacting; and lastly, performing scattering-ultrasonic-centrifugal circulating treatment with alcohol / chloroform mixed liquid, thereby obtaining a purified reduced-oxidized graphene / cuprous sulfide hybrid structure. The ratio of reduced-oxidized graphene to cuprous sulfide or the size of the cuprous sulfide is controlled by controlling the reactant proportion, reaction temperature and time. Compared with the prior art, the invention adopts an in-situ growth method for preparing the reduced-oxidized graphene / cuprous sulfide hybrid structure and has the advantages of simpleness in operation, strong controllability, convenience in commercialized production, and the like.

The invention belongs to the technical field of solar cells and energies, and particularly relates to a preparation method of a porous nanocrystalline Cu2S counter electrode of a quantum-dot-sensitized solar cell. The preparation method comprises the steps of: regarding copper acetate and thioacetamide as precursors; obtaining 20-100 nm cuprous sulfide (Cu2S) nanometer particles through solvothermal reaction; preparing the cuprous sulfide (Cu2S) nanometer particles and ethanol into a thick liquid; forming 5-10 microns Cu2S nanocrystalline porous film on a conductive base body by utilizing a knife coating method, a silk screen print method or a spin-coating method; sintering at 300-500 DEG C in an inert atmosphere or vacuum for 10-60 min to obtain a battery electrode. The prepared Cu2S nanometer porous counter electrode extremely increases contact area of the counter electrode and electrolyte, further increases catalytic reaction site of the Cu2S and the electrolyte, and improves performance of the solar cell. In addition, the preparation method of the porous nanocrystalline Cu2S counter electrode of the quantum-dot-sensitized solar cell is simple in preparation technology, relatively low in cost and has wide application foreground and wide research values.

The invention provides a cuprous sulfide film with preferred orientation growth and belongs to the technical field of semiconductor films. The cuprous sulfide film is obtained through the following steps of firstly cleaning a glass substrate; then putting CuCl2.2H2O into a solvent, spincoating the mixture on the glass substrate to obtain a precursor film, drying the precursor film, putting the dried precursor film into a sealable container containing sulfur powder and hydrazine hydrate and ensuring that the precursor film sample is not contacted with the hydrazine hydrate and the sulfur powder; and finally drying the precursor film. The obtained cuprous sulfide film is subjected to crystal growth along a preferred orientation [111] and is better in continuity and uniformity.

An agent for virus inactivation capable of exhibiting inactivation action based on structural destruction such as degradation and decomposition against viruses, which comprises a monovalent copper compound such as cuprous oxide, cuprous sulfide, cuprous iodide, and cuprous chloride as an active ingredient, and a virus inactivation material, which contains the agent for virus inactivation on a surface of a substrate and / or inside of the substrate.

The invention discloses a CuxS (x=1-2) counter electrode preparation method for quantum dot sensitization solar batteries. Cuprous sulfide powder and elemental sulfur powder of different ratio are mixed, a counter electrode is manufactured on a base body like conductive glass through a thermal evaporation method, and the counter electrode, a photo-positive electrode and electrolyte can form the quantum dot sensitization solar battery. The preparation method is simple, can prepare in large area, can easily manufacture counter electrodes with high efficiency and low cost and is suitable for manufacturing various quantum dot sensitization solar batteries.

The invention relates to a liquid-phase preparation method of a cuprous sulfide film. The method comprises the following steps: dissolving a copper source into an alcoholic solution containing a complexing agent and a small molecule sulfur reagent; adding a certain of viscosity modifier, so as to form a clear, transparent and stable precursor solution; depositing the precursor solution into a precursor film on a substrate by a non-vacuum film deposition technology, and heating and baking; annealing the precursor film at 300-650 DEG C under atmosphere of sulfur group elements for 20-200 minutes, so as to form the cuprous sulfide film. Copper oxide, cuprous oxide, copper hydroxide and / or copper acetylacetonate are taken as copper sources, anionic impurities are not introduced to the film, and the complexing agent, the viscosity modifier and the like are added, so that the precursor solution is clear, transparent and stable. Thus, the preparation process can be operated in air, and the formed film is even in distribution and excellent in quality.

The invention relates to a silicon-PEDOT: PSS hybrid solar cell and a preparation method thereof for improving the photoelectric conversion efficiency of the silicon-PEDOT: PSS hybrid solar cell. Thepreparation method of the silicon-PEDOT: PSS hybrid solar cell comprises the steps of: cleaning a silicon substrate; passivating the surface of the silicon substrate; preparing a silicon nano-wire / PEDOT: PSS composite film; preparing a PEDOT: PSS / cuprous sulfide nano-particle / graphene oxide composite conductive layer; preparing a back interface layer; preparing a front silver gate electrode; and preparing a back electrode.

The invention relates to a preparation method of cuprous sulfide nanoflowers containing copper defects, and belongs to the technical field of nano materials. The method comprises the following steps:uniformly mixing strong alkali, a surfactant, elemental copper, hydrazine hydrate, sodium sulfide and water, heating the mixture to 180-220 DEG C at a constant speed under a sealed condition, and carrying out a constant-temperature reaction for 22-24 hours to obtain a reaction system; cooling the reaction system to room temperature, carrying out centrifugal separation to remove supernatant, washing the reaction system with deionized water until the washing liquid is neutral, and finally drying the reaction product to obtain the cuprous sulfide nanoflower. The method is mild in reaction condition, high in yield, relatively uniform in product morphology and good in repeatability. The cuprous sulfide nanoflowers have an average particle diameter of 700-1900 nm, and the nanosheets constitutingthe nanoflowers have an average particle diameter of about 400 nm. The cuprous sulfide nanoflower has a hierarchical structure and contains copper defects, and can be applied to the fields of photocatalysts, solar cells, electrochemical energy storage devices, sensors and the like.

The invention belongs to the technical field of solid surfaces, and particularly relates to a cuprous sulfide material with the surface hydrophobicity and a preparation method for the cuprous sulfidematerial. The cuprous sulfide material is prepared by densely and vertically arranging cuprous sulfide nanosheets on the surface of a copper-based material and then performing hydrophobic treatment, wherein the size of each cuprous sulfide nanosheet is 0.5-10 microns, and the thickness is 0.1-0.5 micron. The cuprous sulfide material is prepared by using a three-step method which comprises the following steps of step 1, performing in-situ growth of cuprous oxide on the surface of the copper-based material; step 2, performing in-situ growth of the cuprous sulfide nanosheets on the surface of thecuprous oxide; and step 3, enabling the surface of the cuprous sulfide material to be hydrophobic by heating treatment or putting a product in air. The preparation method is simple in process, easy to operate, beneficial to large-scale industrial production and preparation of a cuprous sulfide flake array with the hydrophobicity; and by performing surface hydrophobic modification through a methodof heating treatment or placement in the air only, chemical modification with additional use of low-surface-energy substances is avoided, and the cost is saved.

The invention discloses an electric bistable device based on a composite film of a semiconductor nano-crystalline and a polymer, which relates to a photo-electronic device which has two different conduction states under the same voltage. The device comprises a conducting substrate (1) which is an ITO conducting glass and is sequentially manufactured with a buffer layer (2), a functional active layer (3) and an aluminum electrode (4). The material of the buffer layer (2) is sulfonated polystyrene doped poly-3,4-vinyl dioxy thiophene; and the material of the functional active layer (3) is the mixture of lauryl mercaptan coated cuprous sulfide nano-crystalline and conjugated polymer poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene ethylene), and the ratio of the two components is between 1:1 and 3:1. The electric bistable device based on the composite film of the semiconductor nano-crystalline and the polymer has the characteristics of low cost, easy processing, thin film layer and high current switch ratio, thus the device has extensive application prospect in the field of information electronics industry in the future.

The invention discloses a preparing method for cuprous sulfide nanosheets. A chemical vapor deposition method is used, and the preparing method mainly includes the following steps that nano-copper powder and powdered sulfur are placed into a railboat, and then a reaction is made in a tubular furnace to prepare two-dimensional cuprous sulfide thin sheets; and the prepared cuprous sulfide thin sheets serve as a material to test XRD. The method for preparing cuprous sulfide is simple in process, mature in technology and quiet favorable for commercialization popularization, and equipment is easily obtained; and in addition, the cuprous sulfide prepared from the method is good in degree of crystallinity, and the smoothness of a thin film is high. Conversion of the cuprous sulfide from the beta phase to the gamma phase is carried out at the temperature close to the room temperature.

The invention discloses a preparation method of a lead sulfide quantum dot photovoltaic cell. The method comprises the steps of firstly infiltrating a broadband gap oxide thin film of which the thickness is 2-20 microns into a mixed solution of lead acetate, sodium sulfite and a slow-release agent nitrilotriacetic acid trisodium salt and standing at 5-50 DEG C in a dark place for 10-120 minutes; secondly sequentially infiltrating the obtained thin film in two precursor solutions of a positive ion resource and a negative ion source, controlling the infiltration time at 0.5-5 minutes and repeating the steps for 1-8 times; and finally combining a prepared photoelectrode and polysulfide electrolyte and cuprous sulfide counter electrodes to assemble a quantum dot solar cell. PbS quantum dots which are uniform in size and uniform in distribution can be prepared on the broadband gap oxide thin film, so that the charge transport characteristic can be improved and the charge collection efficiency can be improved while broad spectrum adsorption is ensured; and an efficient and stable quantum dot solar cell device is prepared.

The invention discloses a cuprous sulfide micron ring structure semiconductor material comprising a hierarchical structure consisting of sheets and a porous ring structure consisting of particles. The invention also discloses a preparation method of the cuprous sulfide micron ring structure semiconductor material, and the preparation method comprises the steps of mixing anhydrous ethanol with deionized water to prepare a mixed solution, preparing a thiourea solution and a CuCl solution respectively, and uniformly mixing; adding the mixture into a reaction kettle, sealing the kettle, reacting for 5 hours at 150 DEG C; after the reaction, putting the reactant on a silicon chip, and baking at 55 DEG C to obtain the cuprous sulfide micron ring structure semiconductor material. The cuprous sulfide micron ring structure semiconductor material disclosed by the invention has the advantages of low cost, relatively low growth temperature and relatively high repeatability, and has great potential in the aspects of photo-catalysis of industrial polluted wastewater and field emission luminescence.

The invention relates to a method for preparing a photovoltaic material cuprous sulfide (Cu2S) film, and discloses a technology for preparing the cuprous sulfide film in photovoltaic industry. The preparation method is based on a direct current magnetron sputtering technology. The method takes high purity cuprous sulfide as a sputtering target material and takes argon as a working gas, has characteristics of high deposition rate, controllable film thickness and good repeatability, can be used for preparing a large-area, uniform and high quality cuprous sulfide film, and is expected to realize industrial production of the cuprous sulfide film.

The invention relates to a method for preparing monodispersed cuprous sulfide semiconductor nanocrystalline, comprising the following steps of: step 1, taking metal organic copper compounds as copper raw materials and aliphatic thiol as sulfur raw materials; step 2, adding the copper raw materials and the sulfur raw materials to a solvent with high boiling point, uniformly stirring the mixture, and carrying out heating reaction on the mixture to obtain a reaction liquid; step 3, cooling the reaction liquid to the room temperature; step 4, adding a precipitator to the reaction liquid to separate out gray or black precipitates; step 5, adding a solvent to the separated precipitates, and dissolving the precipitates to obtain a solution; step 6, adding the precipitator to the dissolved solution for aging and centrifugation; and step 7, drying in vacuum to obtain the cuprous sulfide semiconductor nanocrystalline.

The invention belongs to the field of preparation of composite conductive fibers and particularly relates to a preparation method of a cuprous sulfide / spandex composite conductive fiber. According to the method, firstly, polyurethane fibers are subjected to aminolysis, free amino groups exist on fiber surfaces, then copper sulfate pentahydrate and sodium thiosulfate are used as raw materials, and cuprous sulfide is produced on surfaces of the polyurethane fibers with a chemical reaction method. With the adoption of the method, adsorption of metal sulfides on the surfaces of the spandex fibers is effectively improved. The reaction condition is mild, required equipment is cheap, the production process is simple and lower in cost, besides, damage to strength, smoothness and the like of the fiber is smaller, and the fiber touches soft, is good in deformability, light in weight and good in processability, can be used for preparing various composite materials and has a lot of new applications in aspects of clothing, decoration, industry and the like.

A virus inactivator which can exhibit an inactivation activity involving structural disruption such as denaturation or decomposition on viruses, and which comprises a univalent copper compound such as cuprous oxide, cuprous sulfide, cuprous iodide and cuprous chloride as an active ingredient; and a virus-inactivating material which comprises a base material and the virus inactivator on the surface and / or the inside of the base material.

The invention discloses a method for preparing a two-dimensional patterned nano-cuprous sulfide thin film. The method of combining ultraviolet lithography with chemical bath deposition is utilized in the method, EDTA is taken as a complexing agent, CuSO4.5H2O and Na2S2O3 are taken as precursor solution, and the selective deposition of cuprous sulfide nanoparticles is carried out at the temperature of 70 DEG C, thereby preparing the cuprous sulfide nano-thin film with a patterned structure.

The invention discloses a bismuth sulfide-cuprous sulfide heterojunction composite material with a sea urchin-shaped structure, a preparation method and an application thereof. The method comprises the following steps: firstly, adding copper compound, bismuth compound and dimethyl carbamodithioic acid into high-purity water, fully stirring, performing suction filtration and drying, thereby acquiring a sulfur copper source precursor and a sulfur bismuth source precursor; adding the sulfur copper source precursor and the sulfur bismuth source precursor into an organic solvent, fully stirring and uniformly mixing, thereby acquiring a precursor reaction solution; performing two-segment type microwave heating constant temperature reaction on the precursor reaction solution, thereby acquiring the bismuth sulfide-cuprous sulfide heterojunction composite material with the sea urchin-shaped structure. According to the preparation method, the process is optimized, so that the bismuth sulfide-cuprous sulfide heterojunction composite material with the sea urchin-shaped structure, excellent CT imaging performance and photo-thermal effect can be acquired. The bismuth sulfide-cuprous sulfide heterojunction composite material with the sea urchin-shaped structure has an excellent application prospect in the field of CT imaging and photo-thermal treatment.

The invention discloses a solid phase reaction preparation method of cuprous sulfide nanopowder. The method comprises the following steps: uniformly mixing solid cuprous halide as a Cu<+> source with solid water-soluble sulfide as an S<2-> source according to a molar ratio of 1:0.6-1, adding the obtained mixture into a zirconia ball milling tank, carrying out solid phase mechanical ball milling for 0.5-10h, washing by using deionized water to remove water-soluble impurities in the ball milled mixture, and carrying out vacuum drying to obtain the cuprous sulfide nanopowder. The method adopting a simple mechanical and chemical reaction synthesis technology has the advantages of simple preparation process, low cost, good repeatability, and realization of large scale production at normal temperature under normal pressure.

The invention discloses a one-dimensional zinc-sulfide, cuprous-sulfide and carbon nanocomposite and a preparing method thereof. The preparing method includes the steps that zinc salt, copper salt and benzoate serve as raw materials, the coordination of zinc ions, copper ions and carboxyl functional groups of benzoic acid radicals is adopted, self assembling is carried out in an aqueous phase solution, and a benzoic-acid-radical-intercalation layered zinc-hydroxide-copper nanocomposite is obtained; then the benzoic-acid-radical-intercalation layered zinc-hydroxide-copper nanocomposite is reacted with hydrogen sulfide, the product is roasted in nitrogen, and the zinc-sulfide, cuprous-sulfide and carbon nanocomposite is prepared. According to the zinc-sulfide, cuprous-sulfide and carbon nanocomposite and the preparing method, the preparing technology is simple, sources of raw materials are rich, production is easy to enlarge, and compounding of cuprous sulfide, zinc sulfide and carbon nanomaterials and effective regulating and control of the size and the dispersity of cuprous sulfide nano particles are achieved with a solid-state pyrolysis method.