The invention provides a method for preparing an N-type
crystalline silicon solar cell with aluminum-based local emitters on the back side. The method comprises the following steps: firstly, selecting N-type
silicon wafers to carry out the surface-textured
etching process; further forming a front
surface field through phosphorous
diffusion; depositing a passivating film on the front surface after the phosphorosilicate glass is formed during the removal of diffused phosphorous; carrying out the back-side chemical
polishing process on the
silicon wafers to remove the N+ layer formed on the back side during the phosphorous
diffusion; then, sequentially printing an aluminum layer or a silver-aluminum layer through the passivating film deposited on the back side, local holes or grooves on the back side and screens on the back side; then, printing
silver paste on the front surface; and finally, carrying out the one-step
sintering process to form a local P+ layer on the back side and allowing the P+ layer to coming into
ohmic contact with the electrodes on the front and back surfaces. By using the N-type substrate, forming local aluminum-based P-N junctions on the back side and further using the back-side chemical
polishing process to remove the edge junctions, the invention can substitute for the conventional stacking-type
plasma etching process, simplify the technological procedures and further bring a series of
performance improvement to cells.