3249results about How to "Reduce roughness" patented technology

A system and a method for creating a stable and reproducible interface of an optical sensor system for measuring blood glucose levels in biological tissue include a dual wedge prism sensor attached to a disposable optic that comprises a focusing lens and an optical window. The disposable optic adheres to the skin to allow a patient to take multiple readings or scans at the same location. The disposable optic includes a Petzval surface placed flush against the skin to maintain the focal point of the optical beam on the surface of the skin. Additionally, the integrity of the sensor signal is maximized by varying the rotation rates of the dual wedge prisms over time in relation to the depth scan rate of the sensor. Optimally, a medium may be injected between the disposable and the skin to match the respective refractive indices and optimize the signal collection of the sensor.

The invention provides a method for subjecting laminated thin films disposed below a photoresist mask pattern to plasma processing, wherein the roughness on the side walls of the formed pattern is reduced, and the LER and LWR are reduced. When etching a material to be processed to form a gate electrode including thin films such as a gate insulating film 205, a conducting layer 204, a mask layer 203 and an antireflection film 202 laminated on a semiconductor substrate 206 and a photoresist mask pattern 201 disposed on the antireflection film, prior to etching the mask pattern 201, plasma is generated from nitrogen gas or a mixed gas including nitrogen gas and deposition gas to subject the mask pattern 201 to a plasma curing process so as to reduce the roughness on the surface and side walls of the mask pattern 201, and then the laminated thin films 202, 203 and 204 disposed below the mask pattern 201 are subjected to a plasma etching process.

A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and / or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

Embodiments in accordance with the thin film write head of the present invention have a lower pole structure, an upper pole structure, and a multilayer write gap extending from an air bearing surface between the upper and lower pole structures. In preferred embodiments, the write gap comprises at least two of: (a) a first layer covering a lower pole tip portion of the lower pole structure, (b) a second layer covering turns of a semiconductor winding, or (c) a third layer covering a winding insulation stack. In more preferred embodiments, the write gap is formed of the first, the second, and the third write gap layers. An advantage of a write head with a multilayer write gap is that it allows better control of write gap thickness. As such, loss of write gap thickness can be compensated for by deposition of the second write gap layers, or by deposition of the third write gap layer. Some embodiments have one or more additional advantages in providing increased corrosion prevention, improving the integrity of conductor insulation, and / or improving the top pole magnetic material characteristics.

A method for forming a through-silicon via includes the steps of defining a groove in each chip of a wafer which has a plurality of semiconductor chips; applying liquid polymer on the wafer to fill the groove; forming an insulation layer on a sidewall of the groove through patterning the polymer; forming a metal layer to fill the groove which is formed with the insulation layer on the sidewall thereof; and back-grinding a backside of the wafer to expose the metal layer filled in the groove.

Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

Dental restorations can be made by acquiring a three-dimensional digitized image of a dental restoration site. A ceramic blank from which volatile organic binders have been removed, is then machined according to the three-dimensional digitized image to form a “brown” ceramic restoration. This material is then sintered using microwave energy to provide a high density ceramic dental restoration corresponding to the dental restoration site. This method can be carried out within a few hours thereby saving the patient several dental visits and enabling the dentist to better serve the patient directly in the office.

A compound which generates a sulfonic acid having one or more —SO3H groups and one or more —SO2— bonds upon irradiation with an actinic ray or a radiation; a photosensitive composition containing the compound; and a method of pattern formation with the photosensitive composition.

A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

A perpendicular magnetic recording medium comprises a magnetic recording layer that records a signal, an underlayer formed of Ru or Ru compound below the magnetic recording layer, a non-magnetic layer formed of a non-magnetic material below the underlayer to control crystal orientation of the underlayer, a soft magnetic layer provided below the non-magnetic layer, and a substrate on which the magnetic recording layer, the underlayer, the non-magnetic layer, and the soft magnetic layer are formed. The non-magnetic layer comprises a first non-magnetic layer formed above the soft magnetic layer and a second non-magnetic layer formed above the first non-magnetic layer. The first non-magnetic layer is formed of amorphous Ni compound while the second non-magnetic layer is formed of crystalline Ni or crystalline Ni compound.

A magnetic carrier and two-component developer are provided alleviating coarse images, fogging when printing is done after a copier body is left standing for one week in a high temperature and high humidity environment and carrier adhesion after extensive operation in a low image ratio. The magnetic carrier includes magnetic carrier particles including porous magnetic core particles and a resin, wherein in a mercury intrusion method applied to the porous magnetic core particles, a pore diameter in which a differential pore volume in the specific pore diameter range becomes maximum is in a specific range, and when the maximum value of a differential pore volume in the specific pore diameter range is defined as P1 and the maximum value of a differential pore volume in the specific pore diameter range is defined as P2, P1 is in a specific range and the ratio P2 / P1 is in a specific range.

An apparatus and method of making moisture resistant solar cells, strings and modules is provided. The method includes reducing the roughness of the finger patterns by coating them fully or partially with a surface preparation film. The surface preparation film firmly attaches itself to underlying finger patterns and electrical leads while forming a smooth surface on which a moisture barrier film is subsequently deposited. Process flows to obtain moisture resistive solar cells, solar cell strings are described.

Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

The invention provides an electrolyte used in integrated circuit copper cabling electrodeposition, which comprises the following components and contents: 50-200g / liter of copper sulphate, 50-220g / liter of sulphuric acid, 10-150 milligram / liter of chloridion, 5-200 milligram / liter of inhibitor, 5-50 milligram / liter of accelerator, 0.5-20 milligram / liter of leveling agent and the rest of deionized water. As the electrolyte contains the chloridion, inhibitor and accelerator, the surface appearance is improved after electrodeposition and the roughness concentration is reduced. And the leveling agent can increase the adsorption of the accelerator on the surface of electrodes in the deposition process, and then increases the surface improvement effect of the accelerator; the surface roughness of the clad layer is further reduced; the orientation of the clad layer obtained by deposition Cu (111) is dominant; after deposition, the surface dendrite growth mode disappears; and the surface has no hole defects.

A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.