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95results about How to "Improve photolithographic effect" patented technology
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Pliant SRAF for improved performance and manufacturability
InactiveUS7115343B2Expand coverageImprove photolithographic effectPhotomechanical apparatusSemiconductor/solid-state device manufacturingEngineeringFigure of merit
A method for increasing coverage of subresolution assist features (SRAFs) in a layout. A set of possible SRAF placement and sizing rules for a given pitch is provided, ranked according to some figure of merit. During SRAF placement, the fit of a plurality of different SRAF solutions is successively evaluated to find the SRAF solution, or combinations thereof, which most improves lithographic performance while avoiding manufacturability problems. In general, the method comprises: obtaining a plurality of SRAF configurations for the layout; ranking the SRAF configurations based on a figure of merit; applying a highest ranked SRAF configuration to the layout; applying a predetermined number of lower ranked SRAF configurations to the layout; and selecting SRAF features from at least one of the applied SRAF configurations to provide the optimal SRAF configuration for the layout.
Owner:GLOBALFOUNDRIES INC
Method and system for lithography process-window-maximixing optical proximity correction
ActiveUS20100162197A1MaximizesOvercome deficienciesPhotomechanical apparatusOriginals for photomechanical treatmentLithography processGray level
The present invention relates to an efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε, f)=P0+f2·Pb with a threshold of T+Vε for contours, where P0 represents image intensity at nominal focus, f represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.
Owner:ASML NETHERLANDS BV
Compositions of neutral layer for directed self assembly block copolymers and processes thereof
ActiveUS20130078576A1High resolutionHigh pattern definitionElectric discharge tubesNanoinformaticsPolymer scienceMoiety
The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3)where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.
Owner:MERCK PATENT GMBH
Positive resist containing naphthol functionality
ActiveUS20060105267A1Improve photolithographic effectExcellent etch resistancePhotosensitive material auxillary/base layersPhotosensitive material processingResistMethacrylate
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate / methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate / methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate / methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
Owner:IBM CORP
Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
InactiveUS6841333B2Improve solubilitySolubility in organic compoundsOrganic compound preparationPhotosensitive materialsSolubilityAcid catalyzed
Photoacid generator salts comprising photoactive cationic moieties and segmented, highly fluorinated-hydrocarbon anionic moieties are disclosed which provide high photoacid strength and can be tailored for solubility and polarity. The present invention further relates to photoacid generators as they are used in photoinitiated acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.
Owner:3M INNOVATIVE PROPERTIES CO
Compositions of neutral layer for directed self assembly block copolymers and processes thereof
ActiveUS8691925B2High resolutionHigh pattern definitionElectric discharge tubesNanoinformaticsStructural unitDirected self assembly
Owner:MERCK PATENT GMBH
Coating compositions for use with an overcoated photoresist
InactiveUS20060275696A1Improve photolithographic effectImprove responseElectrophonic musical instrumentsPhotosensitive materialsPhotoresistChemistry
In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a resin component with a blend of distinct resins, wherein at least one resin of the mixture comprises chromophore groups and at least one resin of the mixture is at least substantially or completely free of chromophore groups. In a further aspect, systems are provided that include use of multiple underlying organic antireflective coating compositions that have differing absorbances of radiation used to image an overcoated photoresist composition layer.
Owner:ROHM & HAAS ELECTRONICS MATERIALS LLC
Methods of Forming Etch Masks for Sub-Resolution Substrate Patterning
ActiveUS20170092506A1Improve photolithographic effectPhotomechanical apparatusSemiconductor/solid-state device manufacturingImage resolutionElectrical and Electronics engineering
Techniques disclosed herein provide a method and fabrication structure for pitch reduction for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. A pattern of alternating materials is formed on an underlying layer. An etch mask is positioned on the pattern of alternating materials. One or more of the alternating materials can be preferentially removed relative to other materials to uncover a portion of the underlying layer. The etch mask and the remaining lines of alternating material together form a combined etch mask defining sub-resolution features.
Owner:TOKYO ELECTRON LTD
Pliant SRAF for improved performance and manufacturability
InactiveUS20050202321A1Increase coverageImprove performancePhotomechanical apparatusSemiconductor/solid-state device manufacturingImage resolutionSizing
A method for increasing coverage of subresolution assist features (SRAFs) in a layout. A set of possible SRAF placement and sizing rules for a given pitch is provided, ranked according to some figure of merit. During SRAF placement, the fit of a plurality of different SRAF solutions is successively evaluated to find the SRAF solution, or combinations thereof, which most improves lithographic performance while avoiding manufacturability problems. In general, the method comprises: obtaining a plurality of SRAF configurations for the layout; ranking the SRAF configurations based on a figure of merit; applying a highest ranked SRAF configuration to the layout; applying a predetermined number of lower ranked SRAF configurations to the layout; and selecting SRAF features from at least one of the applied SRAF configurations to provide the optimal SRAF configuration for the layout.
Owner:GLOBALFOUNDRIES INC
Photoresists comprising multiple acid generator compounds
PendingUS20140080062A1Weight increaseImprove photolithographic effectPhotosensitive materialsElectric discharge tubesPolymer bondingCompound (substance)
The present invention relates to new photoresist compositions that comprise (a) a polymer comprising an acid generator bonded thereto; and (b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups.
Owner:ROHM & HAAS ELECTRONICS MATERIALS LLC
193nm resist with improved post-exposure properties
InactiveUS7087356B2High resolution lithographic performanceGood exposure dose latitudePhotosensitive materialsRadiation applicationsResistAcid catalyzed
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and / or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.
Owner:IBM CORP +1
Photosensitive polymer having cyclic backbone and resist composition containing the same
InactiveUS6964839B1Inexpensive to fabricateIncreased resistance to dry etchingPhotosensitive materialsRadiation applicationsResistHydrogen atom
Owner:SAMSUNG ELECTRONICS CO LTD
Spin coatable metallic hard mask compositions and processes thereof
ActiveUS20150200090A1High contentImprove photolithographic effectMolybdeum compoundsPhotomechanical apparatusSolventAryl
The present invention relates to a novel spin coatable composition comprising(a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(═O)—), alkylcarbonyloxy (alkyl-C(═O)—O—), alkyloxycarbonyl (alkyl-O—C(═O)—), alkyloxycarbonyloxy (alkyl-O—C(═O)—O—) and mixtures of these; and a solvent.The present invention further relates to processes using the novel compositions.
Owner:MERCK PATENT GMBH
Resist compositions with polymers having 2-cyano acrylic monomer
InactiveUS6902874B2High resolution lithographic performanceImproved stability/shelf-lifePhoto-taking processesPhotosensitive materialsPolymer scienceAcid catalysis
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and / or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a 2-cyano acrylic monomer.
Owner:IBM CORP
Methods of Forming Etch Masks for Sub-Resolution Substrate Patterning
ActiveUS20170148637A1Improve photolithographic effectPhotomechanical apparatusSemiconductor/solid-state device manufacturingImage resolutionEngineering
Techniques disclosed herein provide a method and fabrication structure for pitch reduction for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. A hardmask is positioned first on an underlying layer or layers to be etched. A pattern of alternating materials is formed on the hardmask. One or more of the alternating materials can be preferentially removed relative to other materials to uncover a portion of the hardmask layer. The hardmask and the remaining lines of alternating material together form a combined etch mask defining sub-resolution features.
Owner:TOKYO ELECTRON LTD
Methods of Forming Etch Masks for Sub-Resolution Substrate Patterning
ActiveUS20170092496A1Improve photolithographic effectPhotomechanical apparatusSemiconductor/solid-state device manufacturingImage resolutionRepeat pattern
Techniques disclosed herein provide a method for pitch reduction (increasing pitch / feature density) for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts where specified. A sequence of materials or repeating pattern of lines of materials is used that provides selective self-alignment based on different etch resistivities. Combined with an underlying transfer or memorization layer, multiple different etch selectivities can be accessed. An etch mask defines which regions of the lines of multiple materials can be etched.
Owner:TOKYO ELECTRON LTD
Underlayer composition and process thereof
ActiveUS20120328990A1Reduce decreaseImprove photolithographic effectPhotosensitive materialsSolid-state devicesEpoxyPolymer
The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and / or a hard mask for pattern transfer.
Owner:MERCK PATENT GMBH
Method of extending the stability of a photoresist during direct writing of an image
InactiveUS6969569B2Reduce sensitivityKeep shelf lifeOriginals for photomechanical treatmentPhotosensitive materials for photomechanical apparatusResistDirect writing
In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.
Owner:APPLIED MATERIALS INC
Antireflective coating composition and process thereof
ActiveUS8906590B2Reduce decreaseImprove photolithographic effectPhotosensitive materialsSemiconductor/solid-state device manufacturingCrosslinked polymersPolymer chemistry
Owner:MERCK PATENT GMBH
Underlayer composition and process thereof
ActiveUS8568958B2Reduce decreaseImprove photolithographic effectPhotosensitive materialsSolid-state devicesEpoxyPolymer
The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and / or a hard mask for pattern transfer.
Owner:MERCK PATENT GMBH
Acid generator compounds and photoresists comprising same
ActiveUS20140080059A1Improve photolithographic effectIncrease contrastOrganic chemistryElectric discharge tubesSulfoniumPhotoresist
Acid generator compounds are provided that are particularly useful as a photoresist composition component. Acid generator compounds of the invention comprise 1) a cyclic sulfonium salt and 2) a covalently linked photoacid-labile group. In one aspect, thioxanthone acid generator compounds are particularly preferred, including acid generator compounds that comprise (i) a thioxanthone moiety; and (ii) one or more covalently linked acid labile-groups.
Owner:DOW GLOBAL TECH LLC +1
Antireflective Coating Composition and Process Thereof
ActiveUS20110151376A1Reduce decreaseImprove photolithographic effectPhotosensitive materialsPhotomechanical apparatusPolymer scienceCrosslinked polymers
The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):A-Bn (1)where A is a fused aromatic ring and B has a structure (2),where R1 is C1-C4alkyl and R2 is C1-C4alkylThe invention further relates to a process for forming an image using the composition.
Owner:MERCK PATENT GMBH
Method of increasing the shelf life of a photomask substrate
InactiveUS20050191562A1Reduce sensitivityKeep shelf lifeRadiation applicationsSemiconductor/solid-state device manufacturingResistDirect writing
In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.
Owner:APPLIED MATERIALS INC
Antireflective coating composition and process thereof
InactiveUS20120251943A1Reduce decreaseImprove photolithographic effectOther chemical processesPhotosensitive materialsCrosslinked polymersPolymer chemistry
The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):A-B—C (1)where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)where R1 is C1-C4alkyl and R2 is C1-C4alkyl.The invention further relates to a process for forming an image using the composition.
Owner:AZ ELECTRONICS MATERIALS USA CORP
Heat-sensitive imaging material for making lithographic printing plates requiring no processing
InactiveUS6132934AImprove photolithographic effectGood lithography performanceDiffusion transfer processesRadiation applicationsEngineeringHeat sensitive
According to the present invention there is provided a heat-sensitive imaging material for making lithographic printing plates which require no processing. The heat-sensitive imaging element comprises on a lithographic base having a hydrophilic surface a metallic or metal oxide layer and on top thereof an oleophobic polymeric layer having a thickness of less than 5 mu m and comprising a polymer containing phenolic groups.
Owner:AGFA GEVAERT AG
Photoimageable composition
InactiveUS20050026077A1Low dissolution rateImprove photolithographic effectRadiation applicationsSemiconductor/solid-state device manufacturingCompound (substance)Silsesquioxane
Disclosed are photoimageable compositions containing silsesquioxane binder polymers and photoactive compounds, methods of forming relief images using such compositions and methods of manufacturing electronic devices using such compositions. Such compositions are useful as photoresists and in the manufacture of optoelectronic devices.
Owner:SHIPLEY CO LLC
Low activation energy positive resist
ActiveUS20060105266A1High resolution lithographic performanceReduced post-exposure bake sensitivitySemiconductor/solid-state device manufacturingPhotosensitive material auxillary/base layersPolymer scienceAcid catalysis
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) at low energy levels are obtained using a polymer having acrylate / methacrylate monomeric units comprising a low activation energy moiety preferably attached to a naphthalene ester group. The resist allows the performance benefit of acrylate / methacrylate polymers with low activation energy for imaging thereby enabling improved resolution and reduced post-exposure bake sensitivity. The resist polymer also preferably contains monomeric units comprising fluoroalcohol moiety and a monomeric units comprising a lactone moiety.
Owner:IBM CORP
Antireflective coating composition and process thereof
ActiveUS20120251956A1Reduce decreaseImprove photolithographic effectSemiconductor/solid-state device manufacturingPhotomechanical exposure apparatusPolymer scienceCrosslinked polymers
The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1):[-A-B-C-] (1)where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)where R1 is C1-C4alkyl and R2 is C1-C4alkyl.The invention further relates to a process for forming an image using the composition.
Owner:MERCK PATENT GMBH
Antireflective coating compositions and processes thereof
InactiveUS20150309403A1Reduce decreaseImprove photolithographic effectPhotomechanical exposure apparatusPhotosensitive material processingHydrogenCrosslinked polymers
The present invention relates to a novel absorbing antireflective coating composition comprising a novel crosslinkable polymer comprising at least one repeat unit (A) having structure (1), at least repeat (B) unit having a structure (2), and at least one repeat unit (C) having structure (3)where D is a direct valence bound or C(R1)(R2) methylene moiety where R1 and R2 are independently H, C1-C8 alkyl, C3-C24 cycloalkyl or C6-C24 aryl; Ari, Arii, Ariii and Ariv are independently phenylenic and naphthalenic moiety, R3 and R4 are independently hydrogen or C1-C8 alkyl; and R5 and R6 are independently hydrogen or C1-C8 alkyl; and a solvent. The invention also relates to a process for forming an image using the novel antireflective coating composition.
Owner:AZ ELECTRONICS MATERIALS LUXEMBOURG R L
Photoresist compositions particularly suitable for short wavelength imaging
InactiveUS6852466B2Effective imagingImprove photolithographic effectPhotosensitive materialsRadiation applicationsResistNitrogen
The present invention provides novel photoresist compositions that comprise a resin binder, a photoacid generator compound and an added amine component. In a first aspect, the added amine preferably is 1) non-aromatic 2) has from about 9 to about 16 carbon atoms, 3) contains no primary or secondary amine groups, and / or 4) contains no multiple tertiary amine groups where two tertiary groups are separated by a linkage of optionally substituted ethylene. In a related aspect, the added amine is a non-aromatic amine that comprises either 1) a tertiary nitrogen alicyclic ring member, and preferably is at junction position between a bicyclic or other multi-ring ring system; or 2) a tertiary nitrogen that is not a ring member, and is substituted by at least two tertiary or quaternary carbon radicals.
Owner:SHIPLEY CO LLC
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