4567results about How to "Increase roughness" patented technology

A method of fabricating a semiconductor device including a channel layer includes forming a single crystalline semiconductor layer on a semiconductor substrate. The single crystalline semiconductor layer includes a protrusion extending from a surface thereof. A first polishing process is performed on the single crystalline semiconductor layer to remove a portion of the protrusion such that the single crystalline semiconductor layer includes a remaining portion of the protrusion. A second polishing process different from the first polishing process is performed to remove the remaining portion of the protrusion and define a substantially planar single crystalline semiconductor layer having a substantially uniform thickness. A sacrificial layer may be formed on the single crystalline semiconductor layer and used as a polish stop for the first polishing process to define a sacrificial layer pattern, which may be removed prior to the second polishing process. Related methods of fabricating stacked semiconductor memory devices are also discussed.

A resist composition comprising at least one kind of a nitrogen-containing compound selected from the group consisting of an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonic acid ester group and an ammonium salt compound having a sulfonic acid ester group; and a pattern forming method using the composition.

Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.

The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3)where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains (A) a resin capable of increasing the solubility in an alkaline developer by the action of an acid, and (C) at least one selected from the group of compounds represented by the following formula (ZI-3), (ZI-4) or (ZI-5) and capable of generating an acid upon irradiation of actinic rays or radiation, wherein the resin (A) contains at least one repeating unit having a group capable of decomposing by the action of an acid to leave a leaving group having a ring structure, and the leaving group having a ring structure has at least one of a polar group as a substituent and a polar atom as a part of the ring structure, and a compound derived from the leaving group having a ring structure has a log P value of not less than 0 and less than 2.8.

Provided herein are block copolymer thin film structures and methods of fabrication. Aspects described herein include methods of directed self-assembly of block copolymers on patterns using solvent annealing, and the resulting thin films, structures, media or other compositions. According to various embodiments, solvent annealing is used direct the assembly of block copolymers on chemical patterns to achieve high degrees of pattern perfection, placement of features at the precision of the lithographic tool used to make the chemical pattern, improved dimensional control of features, improved line edge and line width roughness, and resolution enhancement by factors of two to four or greater.

A resist composition comprises: (A) a resin capable of increasing its solubility in an alkali developer by action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent, wherein the resin (C) has a degree of molecular weight dispersion of 1.3 or less and a weight average molecular weight of 1.0×104 or less.

A positive photosensitive composition comprising: (A) a resin having at least one repeating unit having a specific lactone structure at a side chain and being capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a specific acid upon irradiation with an actinic ray or a radiation, and a pattern-forming method using the positive photosensitive composition, are provided.

A positive resist composition containing a compound including a sulfonium cation having a structure represented by the formula (Z-I) as defined herein, a low molecular weight compound which increases solubility in an alkali developing solution by an action of an acid, and a compound which generates a compound having a structure represented by the formula (A-I) as defined herein upon irradiation of an actinic ray or a radiation.

A positive photosensitive composition comprises: (A) 5 to 20 parts by weight of the total amount of at least one compound that generates an acid upon irradiation with an actinic ray; and (B) 100 parts by weight of the total amount of at least one fluorine atom-containing resin having a group that increases a solubility of the resin in an alkaline developer by the action of an acid.

The invention discloses a water-soluble total-synthesis metal working fluid and application thereof. The working fluid is prepared from the following raw materials in percentage by weight: 1wt%-30wt% of a lubricant, 1wt%-40wt% of a corrosion inhibitor, 1wt%-40wt% of organic amine, 1wt%-20wt% of a cleaning agent, 1wt%-20wt% of a coupling agent, 0.5wt%-5wt% of an antifoaming agent and the balance of water. The working fluid can form water-based steam with anti-rust property in an induction manner in the use procedure, so that the problem of rusting caused by steam which is easily generated by a closed machine tool is solved, and therefore, the working fluid is suitable for a high-precision machine tool, especially a numerical control machine tool with a closed structure.

The invention discloses a welding wire sending and pulverized solder sending laser cladding forming method. The method is characterized in that a conscope is used to change a solid laser beam transmitted by a laser to an annular light beam through light path transformation, then an annular focus lens is used to focus the annular light beam to an annular conical light beam, a hollow conical aphotic zone is formed in the annular conical light beam, a welding wire sending and pulverized solder sending protective gas composite nozzle is arranged in the aphotic zone and has the same axis of the annular conical light beam, a welding wire sending hole is arranged in the center, parallel pulverized solder sending holes are around the welding wire sending hole, collimating protective gas holes are parallel to and around the pulverized solder sending holes, wire is sent to a molten pool through the welding wire sending hole along the axial direction of the light beam and vertically to a machining face, airborne pulverized solder is sent to the molten pool through the pulverized solder sending holes at the same time, and collimating protective gas surrounds the welding wire and pulverized solder and is blown to the molten pool. The invention adopts the welding wire sending and pulverized solder sending protective gas composite nozzle to realize welding wire, pulverized solder and protective gas composite cladding and solve the defects of the prior art.

The invention relates to a method of depositing an alumina coating on a part having a silicon carbide surface. The method comprises the following steps:a) depositing a silicon adhesion underlayer on the SiC surface by chemical vapor spraying; andb) depositing a coating on the silicon adhesion underlayer by atmospheric thermal spraying.The invention also provides a device for measuring deformation, which device comprises a first alumina coating obtained by atmospheric thermal spraying onto the silicon adhesion underlayer deposited on the silicon carbide layer covering the substrate of the part, a free filament strain gauge placed on the coating, and an additional alumina coating obtained by atmospheric thermal spraying onto the strain gauge.

A three dimensional object creation system that prints objects layer by layer, the system including a plurality of printheads, the system printing at least part of each of multiple layers simultaneously.

The invention discloses a lithium-ion battery separator subjected to composite coating treatment and a preparation method thereof. The lithium-ion battery separator comprises a basement membrane, a polymer coating coated at one side of the basement membrane, and an inorganic particle coating coated at the other side of the basement membrane; the polymer coating is composed of an aramid coating coated on the basement membrane and a polyvinylidene fluoride coating coated on the aramid coating, and the thickness of the polymer coating is 0.3 to 5 [mu] m; and the inorganic particle coating is composed of inorganic particles of different particle sizes and a binding agent, and the thickness of the inorganic particle coating is s 0.5 to 5 [mu] m. The lithium-ion battery separator provided by the invention has the characteristics of being excellent in mechanical property and heat resistant property, having good wettability and solution preserving property to electrolyte, and excellent in cycle performance and high in safety performance.

A bilayer porous low dielectric constant (low-k) interconnect structure and methods of fabricating the same are presented. A preferred embodiment having an effective dielectric constant of about 2.2 comprises a bottom deposited dielectric layer and a top deposited dielectric layer in direct contact with the former. The bottom layer and the top layer have same atomic compositions, but a higher dielectric constant value k. The bottom dielectric layer serves as an etch stop layer for the top dielectric layer, and the top dielectric layer can act as CMP stop layer. One embodiment of making the structure includes forming a bottom dielectric layer having a first porogen content and a top dielectric layer having a higher porogen content. A curing process leaves lower pore density in the bottom dielectric layer than that left in the top dielectric layer, which leads to higher dielectric value k in the bottom dielectric layer.

A fluorinated resin having enhanced wettability to water prepared by roughening a surface of the fluorinated resin such that a central line roughness average (Ra) of the surface is increased to at least 0.1 mum, and then depositing thereon a thin hydrophilic film while maintaining the central line roughness average (Ra) of at least 0.1 mum, the thin hydrophilic film being formed from a hydrophilic substance having a contact angle of water of less that 90°, and the resulting fluorinated resin having up to 20° of contact angle of water. The fluorinated resins are able to maintain high hydrophilicity even after prolonged exposure to the atmosphere and can be used in various fields that require bio-compatibility and in permeable membranes or filters.

In a polishing method for a semiconductor wafer in which polishing slurry is interposed between the semiconductor wafer and a polishing pad and the semiconductor wafer is mirror-polished by a polishing step for planarization, when polishing is conducted using a suede-like foam urethane resin polishing pad having physical properties of low compressibility lower than 9 % and high pore density equal to or higher than about 150 pores / cm.sup.2 as the polishing pad used in the polishing step, a mirror silicon wafer with good surface roughness of 50 bits in haze can be manufactured.

The invention relates to a fluorine-free superhydrophobic finishing agent containing modified nano silicon dioxide hydrosol and application thereof. The finishing agent is prepared by the following steps of: (1) mixing a precursor, an anionic surfactant and water and stirring violently at the temperature of between 20 and 50 DEG C; and (2) slowly adding ammonia water serving as a catalyst dropwise, stirring, adding long-chain alkylsiloxane serving as a modifier and stirring continually so as to obtain modified SiO2 hydrosol. The finishing agent has a stable property, avoids the pollution of an organic solvent and has high water repellency when used for performing superhydrophobic finishing on textiles.

A method for depositing uniform and smooth ferromagnetic thin films with high deposition-induced microstructural anisotropy includes a magnetic material deposited in two or more static oblique deposition steps from opposed directions to form a free layer having a high kink Hk, a high energy barrier to thermal reversal, a low critical current in spin-torque switching embodiments, and improved resistance to diffusion of material from adjacent layers in the device. Nonmagnetic layers deposited by the static oblique deposition technique may be used as seed layers for a ferromagnetic free layer or to generate other types of anisotropy determined by the deposition-induced microstructural anisotropy. Additional magnetic or non-magnetic layers may be deposited by conventional methods adjacent to oblique layer to provide magnetic coupling control, reduction of surface roughness, and barriers to diffusion from additional adjacent layers in the device.

A system that prints three dimensional products, the system including at least one object incorporation device that incorporates non-printed objects into partially completed product, the non-printed objects not being printed by the system.

The invention provides a double-component polyurethane water-based paint, belonging to the field of organic polymer compounds. The double-component polyurethane water-based paint comprises isocyanate curing agents component A and component B, wherein the molar ratio of OH groups of a polymer in the component A to NCO groups in the component B is 1: (1-2.2); and the component A contains polymer aqueous dispersion and polymer emulsion, wherein the content of OH in the polymer aqueous dispersion is 2.0-5.0% and the grain size of latex in the polymer aqueous dispersion is 10-100nm, the weight of the polymer emulsion is 0.05-16 times that of the polymer aqueous dispersion, the content of OH in the polymer emulsion is 0-2.0%, and the grain size of the latex in the polymer emulsion is 80-500nm. In the invention, the polymer aqueous dispersion which has small average grain size and contains -OH and the polymer emulsion which has large average grain size are compounded, wherein the latex with a large grain size can increase the roughness and unevenness of a film and reduce the gloss of the film, and the emulsion with small particles promotes the latex with the large grain size to aggregate, reduces the lowest film-forming temperature of the film, improves the film-forming capability of the film and decreases the usage amount of a film-forming additive; and the hardness, chemical-resistance and wear-resistance of the film are improved by using two different water-based polymers are used for compounding.

A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.

A three dimensional object creation system that prints objects layer by layer, the system printing at least part of each of multiple layers simultaneously, wherein each layer is defined by a plurality of voxels arranged in a regular array and wherein the voxels of each layer are printed so as to be offset by half a voxel relative to the voxels of adjacent layers in a first direction, a second direction perpendicular to the first direction or both the first and second directions.