2747results about How to "Avoid layering" patented technology

A method of determining local multicast information of a local area network (LAN), comprising dividing the LAN to a number of segments larger than the number of virtual LANs (VLANs) in the network and creating a layer-3 multicast routing table, which relates to each of the segments separately.

A sandwich structure including a core having opposing top and bottom surfaces, a plurality of discrete pins disposed through the core and extending beyond the top and bottom surfaces of the core, a face sheet on the top core surface, and a face sheet on the bottom core surface. The ends of each pin are bent over and lie between the respective core surfaces and the face sheets to secure the face sheets to the core, improve the strength of the core, and to provide a physical connection between the two face sheets. Also disclosed is a reinforced core for a sandwich structure which does not yet have the face sheets assembled to it. Also disclosed is a method of making such a reinforced core and completed sandwich structures including such a core.

Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate. In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond and/or picosecond pulses, and in some embodiments with pulse widths up to a few nanoseconds.

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H₂O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

The invention provides a technique to manufacture a display device with high image quality and reliability at low cost with high yield. According to the invention, a spacer is provided over a pixel electrode layer in a pixel region. Moreover, a surface of an insulating layer which functions as a partition which covers the periphery of the pixel electrode layer is formed at a high position from the surface of the pixel electrode due to stacked layers under the insulating layer. These spacer and insulator which function as a spacer support a mask used for selectively forming a light emitting material over a pixel electrode layer, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection of the mask. Accordingly, such a damage as a crack does not occur in the pixel electrode layer which results in having no defect in shape. Therefore, a display device which performs a high resolution display with high reliability can be manufactured.

It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.

A lighting device having: a light-emitting diode lamp having a light-emitting diode device sealed by a glass sealing part; and a fluorescent layer disposed on the side of an illuminated object of the light-emitting diode lamp. The fluorescent layer is operable to radiate a wavelength-converted light by being excited by light emitted from the light-emitting diode device.

The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.

A sanitary napkin in which diffusing liquid hardly reaches a rear end edge is adapted to make a liquid absorbent layer less deformable in a rear region so that it can easily be kept in close contact with the wearer's buttocks. The sanitary napkin has an elongated main absorbent region surrounded by compressed grooves that are formed in a skin-side surface. Since a rear end of the main absorbent region is far away from a rear end edge of the napkin to provide a relatively large rear region, worries about rearward leakage may be relieved. Furthermore, since auxiliary longitudinal grooves are provided in the rear region, a liquid absorbent layer may hardly be twisted.

In various embodiments, the present invention provides a means for improving gas turbine engine performance by applying fluid flow control to the inter-turbine duct joining a high-pressure turbine spool and an associated low-pressure turbine spool, allowing the low-pressure turbine spool to have a relatively larger diameter than the high-pressure turbine spool. One or more unobstructed fluid flow paths between one or more boundary layer suction ports disposed within the upstream end of the outer-body surface of the inter-turbine duct and the suction side of the associated low-pressure turbine nozzle are provided. Advantageously, the natural static pressure difference between these points results in a self-aspirating assembly. The fluid flow control provided by the respective suction and blowing forces generated allows for a relatively larger diameter low-pressure turbine spool and/or relatively fewer low-pressure turbine nozzles to be used than is possible with conventional systems, assemblies, and methods. Thus, a gas turbine engine weight savings and optimized performance may be achieved.

A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predetermined part of the pad metal by patterning the passivation layer using a first pad mask; forming an oxide layer on the exposed pad metal and the passivation layer formed around the pad open region; forming a color filter, a planarization layer and a microlens, sequentially; forming a low temperature oxide layer on the above structure to protect the microlens; and opening the pad metal by selectively etching the low temperature oxide layer and the oxide layer formed around the pad open region by a second pad mask.

A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.

A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.