51results about How to "Occurrence can be prevented" patented technology

The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.

A process is provided which can effectively inhibit occurrence of hot spots in reaction zones or heat accumulation at the hot spots, in the occasion of producing acrolein and acrylic acid through vapor phase oxidation of propylene in the presence of a catalyst using a fixed bed shell-and-tube reactor, said catalyst having a composition represented by a general formula (1):(wherein A is at least an element selected from Co and Ni; B is at least an element selected from P, Te, As, B, Sb, Sn, Ce, Nb, Pb, Cr, Mn and Zn; C is alkali metal element; D is alkaline earth metal element; E is at least an element selected from Si, Al, Ti and Zr; and O is oxygen; a, b, c, d, e, f, g, h, i and x denote the atomic numbers of Mo, W, Bi, Fe, A, B, C, D, E and O, respectively, and where a is 12, b is 0-5, c is 0.1-10, d is 0.1-10, e is 1-20, fis 0-5, g is 0.001-3, h is 0-3, i is 0-30, and x is a numerical value which is determined depending on the extent of oxidation of each of the elements).Said process is characterized by preparing plural kinds of catalysts having the above composition but differing from each other in (alpha) occupying volume, (beta) calcining temperature and / or (gamma) kind and / or amount of alkali metal element, and filling the reaction zones provided by dividing the catalyst layer in each of the reaction tubes in the reactor into at least two layers in the axial direction of the tube, sequentially with said plural kinds of catalysts in such a manner that the catalytic activity increases from the starting gas inlet side toward the outlet side.

Apparatus for fabricating a display device includes a stage capable of mounting an insulating substrate of the display device and moving the insulating substrate, linear scales which detect a position or moving distance of the substrate, a laser oscillator which generates continuous-waves laser light, a modulator which turns ON / OFF the continuous-wave laser light, a beam forming optic which shapes the continuous-wave laser light passing through the modulator into a linear or rectangular form, an objective lens which projects the at least one of the laser light on the insulating substrate so as to irradiate the insulating substrate with the laser light. The controller counts signals generated by the linear scales for every movement of the stage for a given distance, causes the modulator to turn the generated continuous-wave laser light in an ON state at time when a position of the insulating substrate on which the laser light irradiation is to be started reaches an area on which the laser light is projected, and causes the modulator to turn the generated continuous-wave laser light in an OFF state at another time.

A semiconductor device includes a semiconductor substrate having electronic elements produced therein, and an insulating underlayer formed thereon, and a multi-layered wiring arrangement constructed on the insulating underlayer semiconductor substrate. The multi-layered wiring arrangement includes a first insulating interlayer structure formed on the insulating underlayer, a second insulating interlayer structure, and a third insulating interlayer structure formed on the first insulating interlayer structure. Each of the first, second and third insulating interlayer structures includes a low-k insulating layer, and has a reinforcing element formed therein. The second insulating interlayer structure has a joint plug formed therein. The reinforcing elements of the first and third insulating interlayer structures are connected to each other through the joint plug.

A nickel powder with a mean particle size of 0.05 to 1.0 μm, the nickel powder having a thin oxidized layer of nickel on a surface thereof, an oxygen content of 0.3 to 3.0 wt. % and a carbon content of 100 ppm or less per specific surface area of 1 m2 / g of the powder, in a weight proportion of carbon to the nickel powder of unit weight. When the powder is used for a conductive paste for forming inner electrode layers of a multilayer electronic component, it enables a decrease in the residual carbon amount after a binder removal process, thereby making it possible to obtain a multilayer ceramic electronic component excellent electrical characteristics and high reliability in which electrode layers excelling in continuity are formed without decreasing the strength and electrical characteristics of the electronic component or creating structural defects.

A display apparatus and a method for driving the display apparatus that are capable of suppressing image quality degradation resulting from delay in sampling pulses or from waveform rounding thereof and image quality degradation caused by coupling between the signal line and the common line and that between the signal line and the scan line even when the simultaneous sampling number is increased. The start pulse HST has a pulse width that includes a plurality of pulse widths of the clock pulses HCK and HCKX, for example, two pulse widths. The clock pulses DCK have four phases. Large margins α1 and α2 in the phase relationship between each of the clock pulses DCK1 to DCK4 and each of transfer pulses used for extracting the clock pulses DCK1 to DCK4 are assured. As a result, even if delay or waveform rounding occurs in the clock pulses DCK1 to DCK4, sampling pulses SP1 to SP6 with a constant pulse width equal to that of each of the clock pulses DCK1 to DCK4 can be generated without being affected by the delay or waveform rounding.