315results about How to "Improve in-plane uniformity" patented technology

An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below comer portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.

The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.

An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

A plating apparatus can form a plated film having a more uniform thickness over an entire surface of a substrate and can securely fill interconnect recesses with the metal without forming voids in the embedded metal even when the substrate has a high sheet resistance in the surface. The plating apparatus includes a substrate holder for holding a substrate, a cathode portion including a cathode for contact with the substrate held by the substrate holder to feed electricity to the substrate, and an anode, partly or wholly having a high resistance, disposed opposite a surface of the substrate held by the substrate holder, wherein plating of the surface of the substrate is carried out while filling between the anode and the substrate held by the substrate holder with a plating solution.

Disclosed herein is a light-emitting device comprising a transparent or semi-transparent first substrate, a second substrate provided opposite to the first substrate, a transparent or semi-transparent first electrode provided on the first substrate, a second electrode provided on the second substrate so as to be opposite to the first electrode, and a light-emitting layer which contains a metal oxide semiconductor porous body, by the surface of which an organic light-emitting material is supported, and is provided between the first electrode and the second electrode.

To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift.

A plasma etching apparatus includes: a process chamber 26 in which a plasma etching process is performed on a process target object 1;

A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas introduction area 42-2 having a second gas introduction port 3 for introducing the second process gas into the process chamber 26; flow controllers 102, 113 for adjusting the flow rates of the process gasses; and a gas flow divider 120 for dividing the process gas into a plurality of gas flows, in which the first gas introduction port and the second gas introduction port are provided substantially in the same plane, and the first gas introduction area 42-1 and the second gas introduction area 42-2 are separated from each other.

A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same.

A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of −4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.

A substrate wet-processing method can carry out uniform chemical processing of the surface of a substrate while easily preventing a gas from remaining on the surface of the substrate and preventing difference in the concentration and the temperature of a chemical solution between the end portion and the central portion of the substrate. The substrate wet-processing method includes: providing an acidic solution whose concentration is previously adjusted within a predetermined concentration range; continuously spraying the acidic solution having the adjusted concentration toward a substrate at a predetermined pressure to bring it into contact with a surface of the substrate; and then forming a film of an insulating material, a metal or an alloy on the exposed surface of a metal formed in the surface of the substrate.

A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec.

There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

A single-layered polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafers, etc., which attains excellent step height reduction and in-plane uniformity and is integrally molded by reaction injection molding, is provided. The polishing pad is a polyurethane-based foam 12 having a desired shape, as obtained by molding a gas-dissolved raw material having an inert gas dissolved under pressure in a polyurethane-base resin raw material by a reaction injection molding method, and includes a polishing region 14 having a polishing surface 14a suitable for polishing semi-conductor materials, etc. and having a Shore D hardness in the range of from 40 to 80 and a stress reduction region 16 which is present in the side opposing to the polishing surface 14a and which, when provided with a stress adjusting portion 22 of a desired pattern, is set up so as to have an amount of deflection, as applied with a load of 0.05 MPa, of 10 μm or more.