321results about How to "Improve in-plane uniformity" patented technology

To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same.A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of −4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.

The present invention improves the in-plane uniformity of film formation via a plasma treatment. It is provided a plasma treatment device constituted so that process gas introduced between an electrode plate and a shower plate is exhausted toward a counter electrode through a plurality of small holes formed in the shower plate, the plasma treatment device comprising a diffuser plate having a plurality of small holes, the diffuser plate being arranged substantially parallel with the shower plate, wherein the process gas is introduced between the electrode plate and the diffuser plate, passes through the plural small holes of the diffuser plate, reaches the shower plate and flows out from the plural small holes of the shower plate toward the electrode plate, and wherein within the small holes formed in the diffuser plate and the small holes formed in the shower plate, the small holes formed in a plate which exists more downstream along a flowing direction of the process gas are made in smaller diameters and an aperture ratio of each plate is made smaller in a plate which exists more upstream along the flowing direction of the process gas.

A film forming apparatus includes a processing chamber, and a mounting table disposed in the processing chamber to mount a substrate thereon. The film forming apparatus further includes a gas shower head having gas supply holes and including a central region facing a central portion of the substrate and a peripheral region facing a peripheral portion of the substrate, a first processing gas supply unit for supplying a first processing gas to the central region, a second processing gas supply unit for supplying a second processing gas to the central region, an energy supply unit for supplying energy to react the first processing gas with the second processing gas on the substrate, and a purge gas supply unit for supplying a purge gas to the central region and the peripheral region when one of the first and the second processing gas is switched by the other.

A chemical mechanical polishing pad of the present invention has the following two groups of grooves on the polishing surface: (i) a group of first grooves intersect a single virtual straight line extending from the center toward the periphery of the polishing surface and have a land ratio represented by the following equation of 6 to 30: Land ratio=(P−W)÷W (where P is the distance between adjacent intersections between the virtual straight line and the first grooves, and W is the width of the first grooves); and (ii) a group of second grooves extend from the center portion toward the peripheral portion of the polishing surface and consist of second grooves which are in contact with one another in the area of the center portion and second grooves which are not in contact with any other second grooves in the areas of the center portion. The chemical mechanical polishing pad of the present invention has a high polishing rate and excellent in-plane uniformity in the amount of polishing of the surface to be polished even when the amount of an aqueous dispersion for chemical mechanical polishing is made small.

An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below corner portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.