2931results about How to "High luminous intensity" patented technology

The invention discloses a novel piezoluminescence material with thermal activation delayed fluorescence and aggregation-induced emission properties and a synthetic method and the application of the novel piezoluminescence material. The core structure of the novel piezoluminescence material is carbazole phenothiazine substituted diphenyl sulfone, and the novel piezoluminescence material has a piezoluminescence property, the thermal activation delayed fluorescence property and the aggregation-induced emission property. The synthetic method of the novel piezoluminescence material is simple in process, purification is easy, and the obtained novel piezoluminescence material is high in piezoluminescence intensity and suitable for preparing non-doping luminescent layer materials in pressure sensors or anti-counterfeiting trademark or organic electroluminescent material devices.

In an active-type electroluminescent (EL) display, a conductor interconnecting a cathode (55) of an EL panel (30, 40) and a connection terminal of a signal input substrate (35) has a multilayer structure formed of a cathode material and a conductive material used in a thin-film transistor forming step. The conductor may be formed of a conductive material used in a thin film transistor forming step. A metal material for a gate electrode or drain electrode is preferably used as the conductive material. The connection conductor structure can reduce the electrical resistance of the connection conductor, thus preventing a decrease in display intensity of an EL display.

A light emitting diode comprising a light emitting diode element 20 mounted on a glass epoxy substrate 12, this light emitting diode element 20 being protected at its surface side by a resin seal member 33, in which: a light emitting diode element for blue luminescence, formed of gallium nitride type compound semiconductor is used as the above-mentioned light emitting diode element 20; and a fluorescent material containing layer 21 composed of a fluorescent material containing layer 21 composed of a fluorescent material dispersed into an adhesive is arranged on the back side of this light emitting diode element. On the back side of the light emitting diode element 20, blue luminescence is converted in wavelength to produce white luminescence of high intensity.

Applicant's present invention is a composite scintillator having enhanced transparency for detecting ionizing radiation comprising a material having optical transparency wherein said material comprises nano-sized objects having a size in at least one dimension that is less than the wavelength of light emitted by the composite scintillator wherein the composite scintillator is designed to have selected properties suitable for a particular application.

A device for holographic reconstruction of three-dimensional scenes includes optical focusing means which directs sufficiently coherent light from light means to the eyes of at least one observer via a spatial light modulator that is encoded with holographic information. The device has a plurality of illumination units for illuminating the surface of the spatial light modulator (SLM); each unit comprises a focusing element (21/22/23 or 24), and a light means (LS₁/LS₂/LS₃ or LS₄) that emits sufficiently coherent light such that each of these illumination units illuminates one separate illuminated region (R1/R2/R3 or R4) of the surface, whereby the focusing element and the light means are arranged such that the light emitted by the light means (LS₁-LS₄) coincides close to or at the observer eyes.

A light-emitting apparatus provides a ceramic-made base body, a frame body, a light-emitting element, a conductor layer and a light-transmitting member. The base body has on its upper surface a mounting portion for the light-emitting element. The frame body is joined to the upper surface of the base body so as to surround the mounting portion, with its inner peripheral surface shaped into a reflection surface. The wiring conductor has its one end formed on the upper surface of the base body and electrically connected to the light-emitting element, and has another end led to a side or lower surface of the base body. The light-transmitting member is disposed inside the frame body so as to cover the light-emitting element, which contains fluorescent materials for performing wavelength conversion. The base body is so designed that ceramic crystal grains range in average particle diameter from 1 to 5 μm.

The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.

A solid-state imaging device includes a color filter unit disposed on a pixel array unit including pixels two-dimensionally arranged in a matrix and a conversion processing unit disposed on a substrate having the pixel array unit thereon. The color filter unit has a color arrangement in which a color serving as a primary component of a luminance signal is arranged in a checkerboard pattern and a plurality of colors serving as color information components are arranged in the other area of the checkerboard pattern. The conversion processing unit converts signals that are output from the pixels of the pixel array unit and that correspond to the color arrangement of the color filter unit into signals that correspond to a Bayer arrangement and outputs the converted signals.

It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.

A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

High-molecular compounds comprising repeating units represented by the general formula (1) or (2) and having number-average molecular weights of 10³ to 10⁸ in terms of polystyrene: (1) [wherein Ar¹ and Ar² are each independently a trivalent aromatic hydrocarbon group or a trivalent heterocyclic group; and X¹ and X² are each independently O, S, C(═O), S(═O), SO₂, C(R¹)(R²), Si(R³)(R⁴), N(R⁵), B(R⁶), P(R⁷), or P(═O)(R⁸), with the provisos that X¹ and X² must not be the same and that X¹ and Ar² are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar¹, and X² and Ar¹ are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar²] (2) [wherein Ar³ and Ar⁴ are each independently a trivalent aromatic hydrocarbon group or a trivalent heterocyclic group; and X³ and X⁴ are each independently N, B, P, C(R⁹), or Si(R¹⁰), with the provisos that X³ and X⁴ must not be the same and that X³ and Ar⁴ are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar³, and X⁴ and Ar³ are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar⁴].

A light emitting device comprising a light emitting component that emits light with a first peak wavelength, and at least one sintered ceramic plate over the light emitting component is described. The at least one sintered ceramic plate is capable of absorbing at least a portion of the light emitted from said light emitting component and emitting light of a second peak wavelength, and has a total light transmittance at the second peak wavelength of greater than about 40%. A method for improving the luminance intensity of a light emitting device comprising providing a light emitting component and positioning at least one translucent sintered ceramic plate described above over the light emitting component is also disclosed.

A side-emission type semiconductor light-emitting device 10 includes a substrate 12, and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18a and 18b onto which an LED chip 20 is bonded. A transparent or translucent resin 16 is charged between the substrate 12 and the case 14 whereby the LED chip 20 is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device 10 includes surfaces 16a, 16b and a surface opposite to the surface 16b which are formed of the transparent or translucent resin 16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case 14 is scattered by the light-emitting surface.

One embodiment of the present invention is to provide a stress-stimulated luminescent material which has a unique crystal structure and which emits conventionally unachievable intense light. The stress-stimulated luminescent material of one embodiment of the present invention includes a basic structure in which a plurality of tetrahedral molecules each having an AlO₄-like tetrahedral structure or an SiO₄-like tetrahedral structure share atoms of apexes of the tetrahedral structures so as to be coupled to one another so that a basic material structure is formed and at least either alkali metal ions or alkali earth metal ions are inserted into the void are partially substituted by at least either rare earth metal ions or transition metal ions.

The invention discloses a method for highly sensitive quantitative detection of quantum dot fluorescence immunochromatographic assay. The method includes: building a fluorescence immunochromatographic assay test strip on the basis of optimizing the structure of the test strip and components by the aid of excellent fluorescent characteristics of quantum dots and by means of combining quantum dot fluorescence labeling technology and immunochromatographic assay; detecting fluorescence signal strength of a quantitative belt and a quality control belt by the aid of a fluorescence quantometer and correcting the fluorescence strength of the quantitative belt by the aid of the quality control belt after immunochromatographic assay of the test strip; and further quantitatively detecting analyte according to a standard curve obtained by the fluorescence quantometer. The method is simple, rapid, accurate, low in cost and quite high in sensitivity. Compared with a conventional colloidal gold immunochromatographic assay method, the method has the advantages of fine labeling stability, low non-specificity, high sensitivity, wide linear range and accuracy in quantization. The method is applicable to samples such as blood samples, urine samples, spittle, excrement and the like, and can be applied to detection of critical illness, poison, food safety and the like.

The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer 7 is formed of a multiple quantum well structure containing In_aGa_1−aN (0≦a<1). The p-cladding layer 8 is formed on said active layer containing the p-type impurity. The p-cladding layer 8 is made of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer 8 is made of single-layered layer made of Al_bGa_1−bN (0≦b≦1). A low-doped layer 9 is grown on the p-cladding layer 8 having a p-type impurity concentration lower than that of the p-cladding layer 8. A p-contact layer is grown on the low-doped layer 9 having a p-type impurity concentration higher than those of the p-cladding layer 8 and the low-doped layer 9.

A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

The invention belongs to the technical field of organic luminescence materials. The gathering luminescence material of the invention contains a triphenyl thylene structure, ketone carbonyl is converted into double bonds by substituent phenyl ketone through a Wittig reaction or a Wittig-Horner reaction during synthesis, and the triphenyl thylene structure is formed and then is connected with otheraromatic base groups. The synthesis method has simple technique and easy purification, and the synthesized organic luminescence material containing the triphenyl thylene structure not only has obvious gathering induced luminescence performance, high thermal stability, high vitrifaction transformation temperature and high luminescence intensity, but also is suitable for preparing a luminescence layer material in an organic electroluminescence material component; by introducing proper base groups, and the organic luminescence material also can be used as a fluorescent probe and organic solar battery sensitizing dyestuff.

A fluorescent substance is obtained by weighing and mixing CaS, Ga₂S₃, EuS and Ce₂S₃ in a mole ratio of (1-x):a:x:y (wherein 0.001≦x≦0.2, 0.0001≦y≦0.02 and 0.5≦a≦5) and by sintering the mixture. A light-emitting diode comprises an LED chip 2 and an LED chip sealing portion 5, made of silicone resin and including the fluorescent substance, for enclosing the LED chip 2. Hence, a fluorescent substance that is excited by light having a predetermined wavelength to emit light, a light-emitting diode having excellent luminous efficiency and luminous intensity, and a method for producing the fluorescent substance are attained by the present invention.

The invention discloses an LED driving circuit and a controlling method thereof, comprising a power switch and a current sampling unit, as well as a voltage comparison unit for comparing the voltage obtained by the current sampling unit with a first reference voltage; an input voltage sampling unit for converting the sampled input voltage into a current signal; a timing unit for controlling the off-time of the power switch or presetting a fixed off-time; a logical unit for controlling the power switch by means of a power switch driving unit and for controlling the timing switch in the timing unit. The method for controlling the LED driving circuit comprises the step of modulating the off-time of the power switch with the input voltage or the step of presetting a fixed off-time. The invention can be used in LED light cluster driving with the power factor greater than 0.95.