The invention discloses a preparation method of a
multiple quantum well structure for a photoelectric device. The
multiple quantum well structure comprises n
quantum well structures which are overlapped in sequence, and each
quantum well structure is formed by sequential growth of
potential well layers and potential barriers, wherein the growth of each
potential well layer comprises the following steps: 1, first growing an NixGa1-xN
potential well layer, wherein x is more than 0.1 and less than 0.45; 2, growing a GaN insert layer; and 3, growing the InxGa1-xN potential well layer, wherein x is more than 0.1 and less than 0.45. When the potential well layer grows, one or more than two of GaN insert
layers with energy
band width different from that of the InxGa1-xN potential well layer and an In treatment layer grow alternately. On the one hand, the In treatment layer can stabilize the structure of the InxGa1-xN, ensures the stability of
quantum well components, and controls the stability and consistency of
wavelength; on the other hand, the GaN insert layer disturbs the energy band structure of a
quantum well region to improve the composite rate of
electron hole pairs, so that the internal
quantum efficiency of device illumination is improved, and as the brightness is improved, the
life test performance of the device can be improved.