84 results about "Dielectric matrix" patented technology

A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics. The inventive method includes the steps of: (a) forming a first planar via plus line level pair embedded in a dielectric matrix formed from one or more solid dielectrics and comprising a via level dielectric and a line level dielectric on a substrate, wherein, at least one of said solid dielectrics is at least partially sacrificial; (b) etching back sacrificial portions of said at least partially sacrificial dielectrics are removed to leave cavities extending into and through said via level, while leaving, at least some of the original via level dielectric as a permanent dielectric under said lines; (c) partially filling or overfilling said cavities with a place-holder material which may or may not be sacrificial; (d) planarizing the structure by removing overfill of said place-holder material; (e) repeating, as necessary, steps (a)-(d); (f) forming a dielectric bridge layer over the planar structure; and (g) forming air gaps by at least partially extracting said place-holder material.

Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.

A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.

A microwave filter is formed from an electromagnetic band gap structure. The electromagnetic band gap structure includes a periodic array of metal features (16, 42, 44, 50) formed within a dielectric matrix (14, 52). A defect feature (17, 48) is formed within the periodic array of metal features (16, 42, 44, 50) in order to create a pass band within a stop band region.

An electrical interconnect system employs electrical connectors in which the contacts are identical for both the male and the female side of the connection. Contacts are arranged in a linear header and multiple header pairs are arranged in a dielectric matrix or grid. The grid is an external dielectric frame capable of providing load bearing and geometry requirements. This arrangement results in a cost-effective construction that features very high electrical bandwidth capabilities and an extremely rugged product.

The invention relates to a piezoelectric and/or pyroelectric composite solid material, referred to as a hybrid material, including: a solid dielectric matrix (11), a filler of at least one inorganic piezoelectric and/or pyroelectric material, characterised in that said filler includes filiform nanoparticles (12) distributed throughout the volume of the solid dielectric matrix (11) with an amount by volume of less than 50%, and in that the main directions of elongation of the filiform nanoparticles (12) of the inorganic filler distributed in the dielectric matrix (11) have a substantially isotropic distribution in the solid dielectric matrix (11). The invention also relates to a method for manufacturing and using such a hybrid material for the production of structural parts and supported films deposited on the surface of such a substrate for the purpose of: detecting mechanical stress by direct piezoelectric effect; detecting temperature variations by direct pyroelectric effect; creating a mechanical wave by reverse piezoelectric effect in a flexible audio device, in a de-icing device or in a mechanical anti-fouling device; and manufacturing a soundproof material.

A circuit board and a manufacturing method thereof are provided. The circuit board includes a dielectric substrate, a circuit pattern and a dielectric layer. The circuit pattern is disposed on the dielectric substrate. The dielectric layer is disposed on the dielectric substrate and covers the circuit pattern. The dielectric layer includes a dielectric matrix and a mesh-shaped fiber structure disposed in the dielectric matrix. There is no mesh-shaped fiber structure on a portion of the dielectric substrate exposed by the circuit pattern.

A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.

This invention is related to a reactive nanoparticular cyclodextrin derivative useful as a porogen and a low dielectric matrix, with excellent mechanical properties and uniformly distributed nanopores, manufactured by sol-gel reaction of the above reactive cyclodextrin. Furthemore, this invention also is related to an ultralow dielectric film, with uniformly distributed nanopores, a relatively high porosity of 51%, and a relatively low dielectric constant of 1.6, manufactured by thin-filming of the conventional organic or inorganic silicate precursor by using the above reactive cyclodextrin as a porogen.

Devices and methods of fabricating integrated circuit devices for forming low resistivity interconnects with improved adhesion are provided. One method includes, for instance: obtaining an intermediate semiconductor interconnect device having a substrate, a cap layer, and a dielectric matrix including a set of trenches and a set of vias; depositing a metal interconnect material directly over and contacting a top surface of the dielectric matrix, wherein the metal interconnect material fills the set of trenches and the set of vias; depositing a barrier layer over a top surface of the device; annealing the barrier layer to diffuse the barrier layer to a bottom surface of the metal interconnect material; planarizing a top surface of the intermediate semiconductor interconnect device; and depositing a dielectric cap over the intermediate semiconductor interconnect device.

A CRT has an improved contrast with a provision of a filter layer where nano-sized metal particles are dispersed in a dielectric matrix to selectively absorb light in predetermined wavelengths, specifically wavelengths between peak wavelengths of primary colors emitted by phosphors coated on the inner surface of the face plate. The improved contrast is a result of the metal particles in a dielectric matrix resonating with particular wavelengths and thus absorbing them.

A method to make magnetic random access memory (MRAM), or integrated device in general, is provided. Oxygen ion implantation is used to convert the photolithography exposed areas into metal oxide dielectric matrix. To confine the oxygen ions within the desired region, heavy metals with large atomic number, such as Hf, Ta, W, Re, Os, Ir, Pt, Au is used as ion mask and bottom ion-stopping layer. An oxygen gettering material, selected from Mg, Zr, Y, Th, Ti, Al, Ba is added above and below the active device region to effectively capture the impinging oxygen. After a high temperature anneal, a buried metal oxide layer with sharp oxygen boundaries across the active device region can be obtained.

A composite containing nano magnetic particles is provided. The composite includes nano magnetic particles in a dielectric matrix. The matrix is made of an inorganic material such as silica, alumina, or hydrosilsesquioxane, or an organic material such as polyimide, polymethyl methacrylate, or methyl silsesquioxane. The nano magnetic particles consist of Fe₂O₃, chromium oxide, europium oxide, NiZn-ferrite, MnZn-ferrite, yttrium-iron garnet, or indium In.