963 results about "Photonic crystal structure" patented technology

An RF lens according to the present invention embodiments collimates an RF beam by refracting the beam into a beam profile that is diffraction-limited. The lens is constructed of a lightweight mechanical arrangement of two or more materials, where the materials are arranged to form a photonic crystal structure (e.g., a series of holes defined within a parent material). The lens includes impedance matching layers, while an absorptive or apodizing mask is applied to the lens to create a specific energy profile across the lens. The impedance matching layers and apodizing mask similarly include a photonic crystal structure. The energy profile function across the lens aperture is continuous, while the derivatives of the energy distribution function are similarly continuous. This lens arrangement produces a substantial reduction in the amount of energy that is transmitted in the side-lobes of an RF system.

A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

A color filter including a substrate and a color filter layer is disclosed. The color filter layer is disposed on the substrate and includes a red photonic crystal structures, a green photonic crystal structure and a blue photonic crystal structure. The red photonic crystal structure includes a first defect resonance cavity and has multiple first holes surrounding the first defect resonance cavity. The green photonic crystal structure includes a second defect resonance cavity and has multiple second holes surrounding the second defect resonance cavity. The blue photonic crystal structure includes a third defect resonance cavity and has multiple third holes surrounding the third defect resonance cavity. Wherein, the hole diameter of the first holes is less than the hole diameter of the second holes, and the hole diameter of the second holes is less than the hole diameter of the third holes.

A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.

The present invention provides an optical switch having a photonic crystal structure.An optical switch of the invention has a slab optical waveguide structure whose core (35) has a two-dimensional photonic crystal structure where two or more media (33, 34) with different refractive indices are alternately and regularly arranged in a two-dimensional manner. The photonic crystal structure comprises: a line-defect waveguide; and means for altering the refractive index of the line-defect waveguide.

The present invention provides photonic crystal devices, device components and methods for preventing transmission of electromagnetic radiation from one or more laser sources or laser modes so as to provide an optical shield for protecting a users eyes or an optical sensor. The present invention also provides dynamic photonic crystals and devices incorporating dynamic photonic crystals for optically modulating the intensity of one or more beams of electromagnetic radiation and other optical switching applications.

A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers and a second lattice formed on a second region of the semiconductor layers. The parameters of the first lattice may be selected to maximize the total radiated power from the device. The parameters of the second lattice may be selected to maximize the light extraction into a 30° cone on a surface of the stack.

An optical element is formed by co-extruding to have an arrangement of polymer scattering fibers within a polymer matrix. The scattering fibers lie substantially parallel to a first axis. The scattering fibers are arranged at positions across the cross-section of the polymer matrix to scatter light transversely incident on the optical element in a direction substantially orthogonal to the first axis. The positions of the scattering fibers across the cross-section of the optical element may be selected so as to form a two-dimensional photonic crystal structure for light transversely incident on the optical element.

Apparatus and method for amplifying laser signals using segments of fibers of differing core diameters and / or differing cladding diameters to suppress amplified spontaneous emission and non-linear effects such as four-wave mixing (FWM), self-phase modulation, and stimulated Brillouin and / or Raman scattering (SBS / SRS). In some embodiments, different core sizes have different sideband spacings (spacing between the desired signal and wavelength-shifted lobes). Changing core sizes and providing phase mismatches prevent buildup of non-linear effects. Some embodiments further include a bandpass filter to remove signal other than the desired signal wavelength and / or a time gate to remove signal at times other than during the desired signal pulse. Some embodiments include photonic-crystal structures to define the core for the signal and / or the inner cladding for the pump. Some embodiments include an inner glass cladding to confine the signal in the core and an outer glass cladding to confine pump light in the inner cladding.

A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

Photonic crystal (PC) sensors, and sensor arrays and sensing systems incorporating PC sensors are described which have integrated fluid containment and / or fluid handling structures. The PC sensors are further integrated into a sample handling device such as a microwell plate. Sensors and sensing systems of the present disclosure are capable of high throughput sensing of analytes in fluid samples, bulk refractive index detection, and label-free detection of a range of molecules, including biomolecules and therapeutic candidates. The present disclosure also provides a commercially attractive fabrication platform for making photonic crystal sensors and systems wherein an integrated fluid containment structure and a photonic crystal structure are fabricated in a single molding or imprinting processing step amendable to high throughput processing.

An electron-beam excitation laser has a laser structure with a light emitter and reflectors on one hand and an electron source on the other hand, wherein at least part of the light emitter or reflectors has a multidimensional photonic crystal structure. An electron-beam excitation laser includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the reflectors and / or the light emitter in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants may be formed with a light-emitting material.

A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.

An acoustic sensor and a method of fabricating an acoustic sensor are provided. The acoustic sensor includes at least one photonic crystal structure and an optical fiber having an end optically coupled to the at least one photonic crystal structure. The acoustic sensor further includes a structural portion mechanically coupled to the at least one photonic crystal structure and to the optical fiber. The at least one photonic crystal structure, the optical fiber, and the structural portion substantially bound a region having a volume such that a frequency response of the acoustic sensor is generally flat in a range of acoustic frequencies.

A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).

Traditional incandescent and halogen lamps produce a high CRI warm white light with indirect emission patterns at the cost of poor energy efficiency. This new advancement in solid-state lighting enables the production of a new solid-state filament wherein the tungsten filament is replaced with an array of high efficiency LED emitters which combine through an equiangular spiral, or t-spline / TNURCC lightpipe network to produce a single homogeneous blue light source which then pumps a luminescent filament comprised of a phosphor loaded silicone, phosphor loaded polymer, a lanthanide doped fluoro-phosphate glass, glass ceramic tape, quantum dot filled composite, or super-continuum spectrum producing photonic crystalline structure.

A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

A Fabry-Perot cavity comprised of three-dimensional photonic crystal structures is disclosed. The self-assembly of purified and highly monodispersed microspheres is one approach to the successful operation of the device for creating highly ordered colloidal crystal coatings of high structural and optical quality. Such colloidal crystal film mirrors offer high reflection with low losses in the spectral window of the photonic band gap that permit Fabry-Perot resonators to be constructed with high resolving power, for example, greater than 1000 or sharp fringes that are spectrally narrower than 1.0 nm. The three-dimensional photonic crystals that constitute the Fabry-Perot invention are not restricted to any one fabrication method, and may include self-assembly of colloids, layer-by-layer lithographic construction, inversion, and laser holography. Such photonic crystal Fabry-Perot resonators offer the same benefits of high reflection and narrow spectral band responses available from the use of multi-layer dielectric coatings. However, the open structure of three-dimensional photonic crystal films affords the unique ability for external media to access the critical reflection layers and dramatically alter the Fabry-Perot spectrum, and provide means for crafting novel laser, sensor, and nonlinear optical devices. This open structure enables the penetration of gas and liquid substances, or entrainment of nano-particles or biological analytes in gases and liquids, to create subtle changes to the colloidal mirror responses that manifest in strong spectral responses in reflection and transmission of the collective Fabry Perot response.

Although THz radiation is naturally emitted by hot objects, the intensity levels are too weak to be considered as a practical THz source for most applications. Photonic crystal structures are used to modify the thermal emission peak associated with the standard Planck blackbody spectral distribution so that the THz region is dramatically enhanced. The photonic crystal core is preferably combined with variable Q defect cavities and a wave guiding and power combining structure so that the radiated THz energy is efficiently collected and directed to an output antenna. Higher THz emissions are realized by embedding a finer (higher frequency) photonic crystal structure within a coarser (lower frequency) structure.

A display device higher in light use efficiency than conventional ones, a display device substrate suitably used for such a display device, and a light guide suitably used for an illuminator of such a display device are provided. The light guide has a plane of incidence on which light is incident and a plane of emergence from which light emerges, and has a first photonic crystal structure having a refractive index changing periodically along a direction substantially parallel to the plane of emergence.

A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.

Photonic crystal (PC) sensors, and sensor arrays and sensing systems incorporating PC sensors are described which have integrated fluid containment and / or fluid handling structures. Sensors and sensing systems of the present disclosure are capable of high throughput sensing of analytes in fluid samples, bulk refractive index detection, and label-free detection of a range of molecules, including biomolecules and therapeutic candidates. The present disclosure also provides a commercially attractive fabrication platform for making photonic crystal sensors and systems wherein an integrated fluid containment structure and a photonic crystal structure are fabricated in a single molding or imprinting processing step amendable to high throughput processing.

The invention discloses a method for preparing a two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode). The method comprises: firstly, spinning a layer of ultraviolet optical resist on a target; copying the two-dimensional photonic crystal structure of a template to the surface of the optical resist by utilizing ultraviolet soft nanoimprinting, and etching to remove the residual resist; evaporating a layer of SiO2 or Cr film on a photonic crystal ultraviolet resist, thus a photonic crystal image is obtained on a target sheet through etching; and theobtained GaN is subjected to removing of photoresist, cleaning and drying, thus a photonic crystal target sheet is obtained, and carrying out subsequent process treatment on the obtained target sheet, thus the manufacturing of a device is finished, and the photonic crystal GaN based LED with high light extracting efficiency is obtained. Through the method provided by the invention, the selection ratio of etching can be improved, the duty ratio of the photonic crystal can be regulated in a certain range, the uneven problem of the surface of the LED chip can be overcome, the photonic crystal image can be prepared better through the nanoimprinting technology, and the method is suitable for the preparation of the GaN based photonic crystal LED in industrial production.

An acoustic sensor and a method of fabricating an acoustic sensor are provided. The acoustic sensor includes at least one photonic crystal structure and an optical fiber having an end optically coupled to the at least one photonic crystal structure. The acoustic sensor further includes a structural portion mechanically coupled to the at least one photonic crystal structure and to the optical fiber. The at least one photonic crystal structure, the optical fiber, and the structural portion substantially bound a region having a volume such that a frequency response of the acoustic sensor is generally flat in a range of acoustic frequencies.

An antenna device according to this invention having: a transmission antenna which is the first antenna element formed on a surface of a substrate; and a receiving antenna which is the second antenna element formed on the surface of the substrate includes a photonic crystal structure between the transmission antenna which is the first antenna element and the receiving antenna which is the second antenna element.

A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers and a second lattice formed on a second region of the semiconductor layers. The parameters of the first lattice may be selected to maximize the total radiated power from the device. The parameters of the second lattice may be selected to maximize the light extraction into a 30° cone on a surface of the stack.

A light control element includes a substrate, an optical coupling component formed on the substrate by a photonic crystal structure, and a variable refractive index part provided in a part of the photonic crystal structure so as to divide The optical coupling component into two regions, wherein a traveling direction of a light is changed at an interface of the regions by changing a refractive index at the variable refractive index part such that there is caused a reflection for at least one wavenumber of the light.

A sensor apparatus includes a photonic crystal structure including a Mach Zehnder interferometer with a reference arm and a sensor arm configured to provide an evanescent field through a sensed medium region adjacent to the sensor arm.