319results about How to "Low growth temperature" patented technology

The invention relates to a thin film material preparation device. The invention seals two to four spray pipes which are used for admitting feed gas and fixed on an admitting sediment cavity. The admitting sediment cavity is arranged on a vacuum sediment cavity. The reacting gas or shipping gas is admitted into the spray pipes through air source. A heating wire is arranged around a spout exit of the spray pipes. An inductance coil driven by power supply is provided on an outer wall of the spray pipes. The inductance coil can generate a plasma body. A through sole platform for growing film is provided in the sediment cavity. A rarefying exit pipe is arranged at the lower part or the lower side part of the sediment cavity. The thin film material preparation device of the invention has the advantages of high film forming quality, high rate of sedimentation, low growing temperature and high gas efficiency and so on.

The invention discloses a three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material. The three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material comprises ZnO nanometer-particle crystals and a CU2S nanometer-flower structure substrate material, wherein the ZnO nanometer-particle crystals are uniformly covered on the CU2S nanometer-flower structure substrate material; the CU2S nanometer-flower structure substrate material consists of Cu2S nanometer-sheets; and a P-N junction is formed at the interface of the ZnO nanometer-particle crystals and the Cu2S nanometer-flower structure. The invention further discloses a preparation method of the three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material. The preparation method comprises the following steps of: synthesizing the Cu2S nanometer-flower crystals and ZnO nanometer-particle crystals by adopting a hydrothermal synthesis method, respectively; and uniformly compounding the ZnO nanometer particles on the Cu2S nanometer-sheets by using PEI (Polyether Imide) as an auxiliary material to obtain the three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material. The three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material has the advantages of being low in cost, low in growth temperature, high in repeatability and the like, and also has great development application potential in the on-spot emission field and the photo-catalysis field.

The invention relates to a preparation method of a calcium fluoborate nonlinear optic crystal; calcium fluoborate and a flux are mixed, and heated to 900 - 1170 DEG C at a heating rate of 20- 100 DEG C / hour, and kept in constant temperature for 5- 50 hours, and then cooled to a temperature 2- 10 DEG C higher than saturate temperature, and a mixing melt of calcium fluoborate and the flux is obtained; the mass ratio between calcium fluoborate and the flux is 1: 0.1-1, and the flux is a LiF-CaO-B2O3 system, wherein the molar ratio of LiF: CaO: B2O3 is 1-0.5 : 0-0.37 : 0-0.2; a crystallon arranged on a crystallon rod is dropped to the mixing melt prepared through the steps and cooled to saturate temperature at the same time, the crystallon rod is rotated at a rotating rate of 5-50 revolutions / minute, then the temperature is slowly reduced at a rate of 0.2-3 DEG C / day, the obtained crystal is lifted from the liquid surface and cooled to room temperature at a cooling rate of 5- 100 DEG C / hour, and the obtained calcium fluoborate is a nonlinear optic crystal. The method has the advantages of simple operation, fast growing speed, easy growing and low cost.

The invention discloses a strawy nanostructure and the preparation method. The strawy nanostructure is directly grown through a plurality of clusters of nano-wires from a base; the strawy nanostructure is thick, and the end is sharp; the length is 30 to 60 Mum; the diameter at the top end is 100 to 300nm. Compared with the synthesized nanostructure in the prior art, the preparation method has the advantages of low growth temperature (the preparation is performed only at ambient temperature and the maximum temperature in the small beaker is only 50 DEG C), reduced equipment requirements, low required pressure (only atmospheric pressure), easy operation, simple method, no need of catalyst, resource saving, low cost, good repeatability, and large growth area.

The invention relates to a decompression self assembly growth method for 3D photons crystal film that takes 1-2 hours self assembly growth to monodisperse colloidal solution used for photons crystal at 8-90 degree centigrade and 0.5-50kPa to gain 3D photons crystal film. The invention also supplies a self assembly growth 3D photons crystal film device that includes a growth deposition bulb, thermostatic apparatus, and slide. The feature is that the deposition bulb is a sealed and connecting to vacuuming system through vacuuming joint and vacuuming pipe. The method could grow 1cm length, 5-20 layers colloid particle thickness 3D photons crystal film in a short time, and the optical quality is very good.

The invention provides a calcium germinate nanowire and a preparation method thereof, and belongs to the technical field of nano material preparation. The calcium germinate nanowire provided by the invention is prepared from monocrystalline calcium germinate with the diameter of between 20 to 100nm and the length of more than 100 mu m. In the preparation method, different calcium sources and germanium dioxide are taken as raw materials, and water is taken as a solvent, wherein the calcium sources are calcium acetate, calcium chloride or nitrate of lime; a molar ratio of calcium to germanium in the raw materials is 2:1; the preparation method comprises the following steps of: putting the germanium dioxide and the calcium-containing raw material into a stirrer, and adding the water and stirring; and placing mixed solution obtained after stirring into a sealed container, and then preserving the heat for 1 to 24 hours at the temperature of between 100 and 200 DEG C to obtain a white fluffy product, namely the calcium germinate nanowire. In the invention, the nontoxic germanium dioxide and the different calcium sources are used, and the water is taken as the solvent, so that the raw materials and the preparation process do not pollute the environment, and the preparation method accords with a development direction of the modern industry with the environmental-friendly requirement, and can realize environmental-friendly mass preparation for the calcium germinate nanowire.

The invention discloses a wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material. The wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material contains MoS2 nanosheets and TiO2 dandelion nanospheres, wherein the MoS2 nanosheets penetrate through the space among nanorods on the TiO2 dandelion nanospheres uniformly and can be stably combined with gaps among the nanorods,. The invention also discloses a method for preparing the wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material by a two-step solvent method. The wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material and the method have the advantages that the preparation operation is simple, the yield is high and the cost is low, and the wavy MoS2 nanosheet inlaid TiO2 dandelion nanosphere composite heterojunction semiconductor material has great potential and wide application prospect in the fields of photo-catalytic industrial wastewater and field emission.

The invention relates to a preparation method of a high-tap-density lithium titanate material, which aims at solving the problem of low density of a lithium titanate material produced by the prior art. The method comprises the steps of ball-milling and mixing a lithium source, a titanium source, a fluxing agent and a dispersing agent in a given ratio, drying the mixture, then pre-sintering at a low temperature, cooling and sintering at a high temperature to form the lithium titanate. The preparation method has the characteristics that the fluxing agent is added in the mixing process, so that particles can be tight in contact in the high-temperature sintering process, the interface tension between each two adjacent particles can be reduced, the growth development of a crystal is complete, and the density of the material can be further improved. The method is simple in technological flow, the raw materials are easily available, the prepared lithium titanate particles are large, the tap density is large, and the electrochemical property is good.