184results about How to "Promote recrystallization" patented technology

The invention discloses a high magnetic induction oriented silicon steel and a production method thereof. The silicon steel comprises the following chemical composition: 0.055wt percent to 0.080wt percent of C, 2.9wt percent to 3.5wt percent of Si, 0.01wt percent to 0.02wt percent of Mn, 0.005wt percent to 0.010wt percent of Als, 0.0050wt percent to 0.0090wt percent of N, 0.25wt percent to 0.55wt percent of Sn, 0.010wt percent to 0.030wt percent of P, 0.10wt percent to 0.20wt percent of Cu, and the rest are Fe and unavoidable impurities. The production method comprises the following steps of: smelting, continuous casting, hot rolling, reeling, cold rolling, decarburizing annealing and high-temperature annealing. The production method effectively overcomes the shortcoming of poor producibility of the prior art and improves the production efficiency as well as the magnetism of the silicon steel.

The invention discloses a three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material. The three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material comprises ZnO nanometer-particle crystals and a CU2S nanometer-flower structure substrate material, wherein the ZnO nanometer-particle crystals are uniformly covered on the CU2S nanometer-flower structure substrate material; the CU2S nanometer-flower structure substrate material consists of Cu2S nanometer-sheets; and a P-N junction is formed at the interface of the ZnO nanometer-particle crystals and the Cu2S nanometer-flower structure. The invention further discloses a preparation method of the three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material. The preparation method comprises the following steps of: synthesizing the Cu2S nanometer-flower crystals and ZnO nanometer-particle crystals by adopting a hydrothermal synthesis method, respectively; and uniformly compounding the ZnO nanometer particles on the Cu2S nanometer-sheets by using PEI (Polyether Imide) as an auxiliary material to obtain the three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material. The three-dimensional Cu2S@ZnO nanometer heterostructure semiconductor material has the advantages of being low in cost, low in growth temperature, high in repeatability and the like, and also has great development application potential in the on-spot emission field and the photo-catalysis field.

A high-strength aluminum alloy having good porthole extrudability is provided. It has a Vickers hardness Hv of not less than 40 as measured in a homogenized state created by heat treatment before extrusion and a Vickers hardness Hv of not less than 20 imparted by plastic working after the heat treatment.

The invention belongs to the technical field of double metal composite material rolling, and in particular to a method for improving the bonding strength of double metal composite boards through applying pulse current to upper and lower rollers in the rolling process. The method comprises the main steps of treatment of coating layer metal and base layer metal before rolling, communication of the pulse current to the upper roller or the lower roller and startup of a rolling mill for rolling. The rolling method for applying the pulse current to the rollers is to add a pulse power supply in the rolling process; and the pulse current output by positive and negative poles of the pulse power supply flows through the rollers and the boards through different modes to form a closed loop. The rolling method has the beneficial effects of acceleration of the element dispersion of the coating layer metal and the base layer metal, improvement of the dispersion efficiency, reduction of the rolling force, improvement of the bonding strength and improvement of the rolling production efficiency.

The invention provides a preparation method of an ardealite recrystallization wall material. The method comprises steps of: mixing ardealite and additives in a mass ratio of 1:0.02-0.15; grinding the mixture to -200 mesh to realize intimate mixing of the ardealite and the additives; mixing the ground mixture and water in a mass ratio of 1:0.15-0.25, blending well, moulding and maintaining under normal temperature and normal pressure to obtain an ardealite wall finished product. According to the method, cost of binder is saved, and a calcination process and corresponding pollution are avoided. More importantly, the recrystallization solidified wall material has more stable performance and overcomes a problem of expansion and cracking of a current similar burn-free ardealite brick during usage, because a phenomenon of an unstable long-term wall material endurance, caused by expansion of sulphate aluminium after addition of cement, is avoided.