5249 results about "Single component" patented technology

The present invention discloses a NOx sensor for accurately detecting the total concentration of nitrogen oxides in a measured gas without being affected by interference gases. The sensor comprises a gas treatment chamber 5 arranged at the prior stage of the gas detection chamber 3, an inorganic porous member 25 loaded in the gas treatment chamber, and a NOx conversion pumping cell 14, 15 and / or an oxygen supplying pumping cell which supplies oxygen into the gas treatment chamber. When the measured gas is introduced in the gas treatment chamber, the interference gases contained in the measured gas are effectively oxidized by the supplied oxygen under the assistance of the catalytic activity of inorganic porous member. The total amount of the nitrogen oxides is measured in the gas detection chamber while NOx in the measured gas are converted into a single component (NO2 or NO) by the NOx conversion pumping cell after the interference gases are oxidized.

An angular mounted optical connector frame. The frame comprises a housing open at a front and a rear to form a central passageway along an axis at an oblique angle with respect to the horizon. A pivot is attached to the housing outer portion forward of the housing rear and has an axis of rotation parallel to the horizon but perpendicular to the axis of the central passageway. A stop having a first flat face is attached to the housing outer portion opposite the pivot and aft of the housing front. The frame may further comprise a latch formed by a base section attached to the housing outer portion opposite the pivot forward of the stop and two spring bars that extend in cantilever fashion around the stop and towards the housing rear. Each spring bar has a catch extending away from the stop mounted aft of the base section but forward of its first flat face. The frame may also comprise first and second housings, each having a base, side walls, and a front, joined at the bases thereof to form a single component. The bases and fronts of both the first and second housings are open to first and second cavities formed by the side walls of the first and second housings respectively. A first ridge protrudes from the first housing and defines a mounting notch between itself and the first housing side walls. A second ridge protrudes from the second housing and defines a recession therein for receiving a fastener.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.