The invention relates to the technical field of polysilicon ingot furnace designing and manufacturing, and aims to provide a follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon. The thermal field structure comprises a furnace chamber with a side surface enclosed heat insulation cage body, a crucible and a thermal field are arranged in the heat insulation cage body, and the upper end of the heat insulation cage body is connected with a lifting device; the upper part and the lower part of the heat insulation cage body are respectively provided with a top heat insulation board and a lower heat insulation body, wherein the top heat insulation board is fixedly suspended on an electrode, the lower heat insulation board and a heat exchange are fixed on a support column, the top heat insulation board and the upper end of the heat insulation cage body are movably connected, and the lower heat insulation board and the lower end of the heat insulation cage body are movably connected; and a circular follow-up heat insulation ring is fixed in the heat insulation cage body through a plurality of connecting devices. The follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon has reasonable design, can increase the grain size of polysilicon, reduce grain boundary and improve the verticality of the growing direction of polysilicon so as to improve the quality of polysilicon ingots, and simultaneously the follow-up heat insulation ring also plays the role of energy consumption reduction.