80results about How to "Lower gate voltage" patented technology

A process and a memory architecture for operating a charge trapping memory cell is provided. The method for operating the memory cell includes establishing a high threshold state in the memory cell by injecting negative charge into the charge trapping structure to set a high state threshold. The method includes using a self-converging biasing procedure to establish a low threshold state for the memory cell by reducing the negative charge in the charge trapping structure to set the threshold voltage for the cell to a low threshold state. The negative charge is reduced in the memory cell by applying a bias procedure including at least one bias pulse. The bias pulse balances charge flow into and out of the charge trapping layer to achieve self-convergence on a desired threshold level. Thereby, an over-erase condition is avoided.

A circuit and method for reducing losses in a DC / DC converter by optimizing gate drive voltage. The circuit and method detect a change in the output load, or more specifically the output current, and adjust the gate voltage accordingly; in other words, providing adaptive gate drive voltage. In response to a reduction of output current, the invention reduces the gate voltage so as to reduce both conduction and switching losses in the semiconductor switching devices in the output stage.

The invention provides a pixel circuit that can cancel the influence of the mobility of a drive transistor. A drive transistor supplies a light-emitting element with an output current dependent upon an input voltage. The light-emitting element emits light with a luminance dependent upon a video signal in response to the output current supplied from the drive transistor. The pixel circuit includes a correction unit that corrects the input voltage held by a capacitive part in order to cancel the dependence of the output current on the carrier mobility.

A nanowire wrap-gate transistor is realised in a semiconductor material with a band gap narrower than Si. The strain relaxation in the nanowires allows the transistor to be placed on a large variety of substrates and heterostructures to be incorporated in the device. Various types of heterostructures should be introduced in the transistor to reduce the output conductance via reduced impact ionization rate, increase the current on / off ratio, reduction of the sub-threshold slope, reduction of transistor contact resistance and improved thermal stability. The parasitic capacitances should be minimized by the use of semi-insulating substrates and the use of cross-bar geometry between the source and drain access regions. The transistor may find applications in digital high frequency and low power circuits as well as in analogue high frequency circuits.

A finger-like floating gate structure in flash memory cells is disclosed. Raised isolation regions within a semiconductor region separate parallel active regions. A gate dielectric layer is disposed over the active regions. Finger-like floating gates are equally spaced along the active regions. The finger-like floating gates are comprised of a conductive base section that is disposed over the gate dielectric layer and three conductive finger sections that are in intimate electrical contact with the base section. An interlevel dielectric layer is patterned into equally spaced parallel stripes perpendicular to the active regions and each stripe is disposed over the corresponding composite floating gate for each active region. Word lines, which are composed of a third conductive layer, are parallel lines disposed over the interlevel dielectric layer and serve as control gates.

A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

Change in power supply voltage supplied to a device under test is controlled. There is provided a test apparatus for testing a device under test, the test apparatus including: a reference voltage supply section for supplying a reference voltage; a field effect transistor provided between a positive side terminal and a negative side terminal of the reference voltage supply section, so that a drain terminal and a source terminal of the field effect transistor are in parallel connection with the device under test; an inductance that is connected between the positive side terminal and the negative side terminal of the reference voltage supply section, the inductance being in serial connection with the device under test between a positive-side power supply terminal and a negative-side power supply terminal of the device under test, and being in serial connection with the field effect transistor between the drain terminal and the source terminal of the field effect transistor; a control section for controlling a gate voltage of the field effect transistor, thereby changing a power supply voltage to be supplied to the device under test; and a judgment section for judging quality of the device under test, based on characteristic of the device under test in accordance with change in the power supply voltage.

A pixel circuit is disposed where a scan line arranged in a row direction to supply a control signal and a data line arranged in a column direction to supply a video signal intersect each other. The pixel circuit includes: a sampling transistor; a drive transistor; a capacitor connected between the current path end of the sampling transistor and the gate of the drive transistor; and a light-emitting device connected to the current path end of the drive transistor. The pixel circuit connects the mobility with negative feedback during a mobility connection period.

The amplifier circuit (1) includes a differential pair of PMOS transistors at input (P3, P4), whose source receives a current from a current source (3). The gate of the first transistor (P3) of the pair defines a non-inverting input (XOUT) and the gate of the second transistor (P4) of the pair defines an inverting input (XIN). A drain of the first transistor (P3) of the differential pair is connected to a diode connected NMOS transistor (N2) of a first current mirror (N1, N2), and a drain of the second transistor (P4) of the differential pair is connected to a diode connected NMOS transistor (N3) of a second current mirror (N3, N4). A diode connected PMOS transistor (P2) of a third current mirror is connected to the drain of a second NMOS transistor (N4) of the second current mirror, while a drain of a second PMOS transistor (P1) of the third current mirror is connected to the drain of a second NMOS transistor (N1) of the first current mirror to define a first output (OUT1), which is inverted by a reverser (N5, P7) to supply an inverted output signal (OUT) capable of varying rail to rail. A first complementary NMOS transistor (N6) is connected in the form of a reverser with the first PMOS transistor (P3) of the differential pair. A second complementary NMOS transistor (N7) is connected in the form of a reverser with the second MOS transistor (P4) of the differential pair.

The present invention relates to a symmetric quadrupole structured field emission display without spacer comprising the upper and under substrates with a dielectric layer in between, wherein comb-like dielectric layer with lateral connection belts and a number of longitudinal working belts and longitudinal anodes are arranged on the upper substrate, bus electrodes are arranged longitudinally along the center on each anode, on the top, longitudinal alternating phosphor layer and dielectric layer for isolation on anode, gate electrodes are arranged on both sides of each longitudinal work belts, with the bus electrode as symmetry center, forming interdigital gate electrodes, horizontal cathode electrodes and longitudinal auxiliary electrodes are on the under substrate, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating horizontally on each cathode electrode, each intersect of the auxiliary electrode and cathode is isolated by the dielectric layer for cathode.