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170results about How to "High power supply voltage" patented technology

Semiconductor device and display device

A single-crystal semiconductor layer is separated from a single-crystal semiconductor substrate and is fixed to an insulating substrate to form a TFT over the insulating substrate. Then, a driver circuit is formed using the TFT. The TFT has excellent current characteristics because an active layer is almost in a single-crystal state. Accordingly, a small thin display device with low power consumption can be manufactured. Further, a controller and a shift register which is included in a source driver are operated at the same power supply voltage. Thus, power consumption can be reduced.
Owner:SEMICON ENERGY LAB CO LTD

Integrated circuits with temperature-change and threshold-voltage drift compensation

ActiveUS6933869B1Increase power supply voltageReduce eliminate negative impactElectric signal transmission systemsStatic storageOperating temperatureIntegrated circuit
Integrated circuits are stabilized by monitoring changes that affect circuit operation and by compensating for those changes using power supply adjustments. Changes in operating temperature and threshold voltage changes may be measured. Differential measurements may be made in which threshold voltages measured in continuously-biased monitoring circuits are compared to threshold voltages measured in intermittently-biased monitoring circuits. Temperature changes may be monitored using a temperature monitoring circuit based on an adjustable current source and a diode. Monitoring and compensation circuitry on the integrated circuits may use analog-to-digital and digital-to-analog converters controlled by a control unit to make temperature and threshold voltage measurements and corresponding compensating changes in power supply voltages.
Owner:TAHOE RES LTD

Near field communication device, electronic system having the same and method of controlling power in near field communication device

A near field communication (NFC) device includes a resonance unit and an NFC chip. The resonance unit emits an electromagnetic wave to communicate data with an external NFC card in a reader mode. The NFC chip estimates a distance between the resonance unit and the external NFC card based on an antenna voltage generated by the resonance unit while the resonance unit emits the electromagnetic wave, and adjusts a magnitude of the electromagnetic wave based on the estimated distance.
Owner:SAMSUNG ELECTRONICS CO LTD

Wide output swing CMOS imager

InactiveUS20070218579A1Increase output swingIncrease supply voltageSolid-state devicesSemiconductor/solid-state device manufacturingCMOSN channel
A CMOS active pixel sensor (APS) imager cell is provided on a silicon-on-insulator (SOI) substrate. The APS imager cell is made from a SOI substrate including a silicon (Si) substrate, a silicon dioxide insulator overlying the substrate, and a Si top layer overlying the insulator. A pixel sensor cell including a photodiode is formed in the Si top layer of the SOI substrate. A pixel transistor set is formed in the SOI top Si layer and connected to the pixel sensor cell. The pixel transistor set includes at least one p-channel MOS (PMOS) transistor and at least one n-channel MOS (NMOS) transistor. In the case of a three-transistor (3T) pixel transistor set, the selected transistor is NMOS, the reset transistor is PMOS, and the source follower may be either NMOS or PMOS.
Owner:SHARP LAB OF AMERICA

Apparatus and Method for High Voltage Bandgap Type Reference Circuit with Flexible Output Setting

An apparatus and method for a voltage reference circuit with flexible and adjustable voltage settings. A voltage reference circuit, comprising a PTAT Current Generator configured to provide current through a first resistor, a CTAT Current Generator configured to provide a CTAT current through a second resistor, a PTAT-CTAT Adder circuit configured to sum the PTAT current, and the CTAT current, wherein said sum of the PTAT and CTAT current through a third resistor is configured to provide an output voltage greater than a silicon bandgap voltage.
Owner:APPLE INC
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