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202results about How to "Voltage is accurate" patented technology

Flexible force or pressure sensor array using semiconductor strain gauge, fabrication method thereof and measurement method thereof

The force or pressure sensor array of the present invention effectively has both flexibility and elasticity. Since the substrate itself is a kind of a polymer material, the substrate can be bent or expanded. Although silicon, which is a material of the semiconductor strain gauge, is easily broken and solid, mechanical flexibility can be secured if it is fabricated extremely thin. To this end, particularly, disclosed is a flexible force or pressure sensor array using semiconductor strain gauges 110, the sensor array comprising: a substrate 10 including: the semiconductor strain gauges 110 in which a plurality of elements formed in a certain array pattern is deformed by force or pressure, a pair of polymer film layers 120 and 130 having film surfaces contacted facing each other and containing the semiconductor strain gauge 110 between the film surfaces contacted with each other, and a pair of signal line layers formed on top and bottom surfaces of an insulating layer using either of the pair of polymer film layers 120 and 130 as the insulating layer and connected to the elements 111 of the array pattern to form electrodes, for fetching deformation signals outputted due to deformation of the elements 111 to outside; and a pair of elastomer layers 20 and 30 formed on both sides of the substrate 10 to contain the substrate 10 inside.
Owner:KOREA RES INST OF STANDARDS & SCI

SOC estimation method for series-wound battery pack having equalization circuit

The invention relates to an SOC estimation method for a series-wound battery pack having an equalization circuit. According to the estimation method, adaptive extended Kalman filtering SOC estimation is carried out on the single batteries with the lowest voltage or the highest voltage in the charge-discharge stage so as to obtain the SOC of the series-wound battery pack. For eliminating influence on the measurement signal from noise, and for analyzing the unstable and sharply-changed voltage and current signals, wavelet transform is performed before the implementation of the adaptive extended Kalman filtering so as to realize denoising and analyzing of the signal; and the condition that the curves of the battery parameters and the open circuit voltage-state of charge (OCV-SOC) are changed along with the changes of temperatures and the changes of the SOC is taken into consideration. By adoption of the estimation method, online updating of the parameters can be performed, so that the SOC estimation precision can be improved; the SOC of the battery pack can be accurately estimated under the premise of ensuring the safety operation of the series-wound battery pack; therefore, the estimation method is applicable to active equalization and passive equalization; and meanwhile, by adoption of the estimation method, the influence from noise can be effectively eliminated, and the voltage and current signals can be effectively analyzed.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Internal voltage generating circuit and semiconductor integrated circuit device

A voltage for reference at a voltage level higher than a target value is produced from a constant current provided from a constant current generating circuit, and is subjected to resistance division by a resistance division circuit to produce a reference voltage at the target level, and then a final reference voltage is produced by a voltage follower. An internal voltage generating circuit thus provided can generate the reference voltage having the desired voltage level with high accuracy as well as an internal voltage based on the reference voltage by controlling temperature characteristic even with a low power supply voltage.
Owner:RENESAS ELECTRONICS CORP

Band-gap reference voltage generator for low-voltage operation and high precision

Provided is a band-gap reference voltage generator for low-voltage operation and high precision. The band-gap reference voltage generator minimizes voltage drop by connecting resistors in parallel to bipolar transistors, and cancels temperature dependence by properly adjusting a resistor of an output stage, so that it can provide a stable reference voltage that is unaffected by a change in temperature in spite of a low power supply voltage. Further, the band-gap reference voltage generator minimizes variation of the reference voltage caused by offset noise by switching of input and output voltages at input and output stages of a feedback amplifier, so that it can provide a precise reference voltage.
Owner:ELECTRONICS & TELECOMM RES INST +1

Impedance conversion circuit, drive circuit, and control method of impedance conversion circuit

An impedance conversion circuit IPC1 including: an operational amplifier OP1 connected as a voltage follower and supplied with, as an input voltage Vin, a voltage selected from 2j levels of voltages (j is a positive integer) based on data of high j bits of the gray scale data; and an output voltage setting circuit OVS1 for precharging or discharging an output of the operational amplifier OP1 based on data of a most significant bit of low k bits (k is an integer more than 1) of the gray scale data. The operational amplifier OP1 outputs, as an output voltage, a voltage having a difference from the input voltage by a dead zone width after the output voltage setting circuit OVS1 precharges or discharges the output of the operational amplifier OP1. The dead zone width is determined by an operating current of the operational amplifier OP1. The operating current is varied based on data of low k bits of the gray scale data.
Owner:SEIKO EPSON CORP

Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage

The present invention is directed to a method and a system for clamping a wafer to a J-R electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the J-R electrostatic chuck, wherein the determination is based, at least in part, on a minimum residual clamping force associated with the wafer and the electrostatic chuck and a surface topography of a leaky dielectric layer associated therewith. The wafer is placed on the electrostatic chuck; and the determined clamping voltage is applied to the electrostatic chuck, therein electrostatically clamping the wafer to the electrostatic chuck, wherein at least the minimum residual clamping force is maintained during a polarity switch of the single-phase square wave clamping voltage. The determination of the surface topography comprises a first gap and a second gap between the wafer and the electrostatic chuck and an island area ratio, wherein a difference in RC time constants associated with the respective first gap and second gap is provided such that at least the minimum residual clamping force is maintained during the polarity switch. Upon removal of the square wave clamping voltage, the de-clamping time is substantially reduced, and corresponds to the pulse width of the square wave clamping voltage.
Owner:AXCELIS TECHNOLOGIES

Method for driving pixel circuit, electro-optic device, and electronic apparatus

There is provided a method for driving a pixel circuit including a light-emitting element that emits light whose amount corresponds to a driving current, a driver transistor that supplies the driving current to the light-emitting element, a first transistor provided between a gate of the driver transistor and a drain of the driver transistor, a second transistor provided between the drain of the driver transistor and a node used to supply an initialization potential, and a capacitive element one terminal of which is connected to the gate of the driver transistor. In an initialization period in which the first transistor is turned on, the method for driving a pixel circuit includes supplying a fixed potential to the other terminal of the capacitive element and supplying a predetermined potential allowing the second transistor to be operated in a saturation region thereof to a gate of the second transistor. In a writing period after the initialization period is finished, the method for driving a pixel circuit includes supplying a potential corresponding to a gradation to be displayed to the other terminal of the capacitive element.
Owner:138 EAST LCD ADVANCEMENTS LTD

Servo loop for well bias voltage source

A servo loop for a charge pump including comparator. A variable resistor and comparator are in series and couple the output of the charge pump to an enable input. A current source / sink coupled to the variable resistor provide a first input voltage to the comparator, with the second input of the comparator being coupled to ground or Vdd. A shunt circuit in parallel with the load at the output of the charge pump is also coupled to the output of the comparator. The charge pump and shunt are alternately enabled and disabled by the comparator to maintain a body-bias supply voltage. The servo loop may be configured to provide body-bias for NFETs or PFETs.
Owner:INTELLECTUAL VENTURES HOLDING 81 LLC
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