182 results about "Cmos fabrication" patented technology

Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include the one or more parasitic isolation devices and / or buried guard ring structures disclosed in the present application. The introduction of design and / or process steps to accommodate these novel structures is compatible with conventional CMOS fabrication processes, and can therefore be accomplished at relatively low cost and with relative simplicity.

A compact, integrated LIDAR system utilizes SOI-based opto-electronic components to provide for lower cost and higher reliability as compared to current LIDAR systems. Preferably, an SOI-based LIDAR transmitter and an SOI-based LIDAR receiver (both optical components and electrical components) are integrated within a single module. The various optical and electrical components are formed utilizing portions of the SOI layer and applying well-known CMOS fabrication processes (e.g., patterning, etching, doping), including the formation of additional layer(s) over the SOI layer to provide the required devices. A laser source itself is attached to the SOI arrangement and coupled through an integrated modulation device (such as a Mach-Zehnder interferometer, i.e., MZI) to provide the scanning laser output signal (the scan controlled by, for example, an electrical (encoder) input to the input to the MZI). The return, reflected optical signal is received by a photodetector integrated within the SOI arrangement, where it is thereafter converted into an electrical signal and subjected to various types of signal processing to perform the desired type(s) of signal characterization / signature analysis.