Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low drop-out linear voltage stabilizer and regulation circuit thereof

A technology of low-dropout linearity and circuit adjustment, which is applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of slow recovery and long time of voltage recovery at the output terminal Vout of the LDO, and achieve voltage stability and responsiveness at the output terminal. fast effect

Inactive Publication Date: 2013-05-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The size of the transistor used by the error amplifier OP is relatively large, so it takes a long time for the changed voltage of the LDO output terminal Vout to finally reflect to the gate of the PMOS adjustment transistor MP, resulting in a slow recovery speed of the voltage of the LDO output terminal Vout

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low drop-out linear voltage stabilizer and regulation circuit thereof
  • Low drop-out linear voltage stabilizer and regulation circuit thereof
  • Low drop-out linear voltage stabilizer and regulation circuit thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050]The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description.

[0051] As mentioned in the background technology, during the working process of the LDO, the voltage of the LDO output terminal Vout will drop suddenly, for example, the device that needs the LDO to provide voltage is suddenly connected to the LDO, and the changed voltage needs to pass through the large error of the parasitic capacitance The amplifier OP and the buffer unit buffer can be fed back to the gate of the PMOS adjustment transistor MP after a long time, which reduces the ability of the LDO to adjust the output voltage.

[0052] Such as figure 2 As shown, in order to solve the above problems,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low drop-out linear voltage stabilizer and a regulation circuit thereof. The low drop-out linear voltage stabilizer comprises a first PMOS (P-channel metal oxide semiconductor) transistor, a second PMOS transistor, a third PMOS transistor, a first NMOS (N-channel metal oxide semiconductor) transistor and a first current source, wherein the grid electrode of the first PMOS transistor is connected with the drain electrode of the third PMOS transistor and the drain electrode of the first NMOS transistor; first voltage is input into the source electrode of the first PMOS transistor; the drain electrode is connected with the source electrode of the second PMOS transistor; the drain electrode of the first PMOS transistor is suitable to connect with the output end of the low drop-out linear voltage stabilizer; the grid electrode of the second PMOS transistor is suitable to connect with the output end of an error amplifier or buffer unit of the low drop-out linear voltage stabilizer; the drain electrode of the second PMOS transistor is connected with the source electrode of the first NMOS transistor and the first end of first current source; second voltage is input into the grid electrode of the third PMOS transistor, and the first voltage is input into the source electrode of the third PMOS transistor; the first voltage is input to the grid electrode of the first NMOS transistor; the second voltage is input into the second end of the first current source; and the voltage value of the first voltage is more than the voltage value of the second voltage.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a low-dropout linear voltage regulator and its adjustment circuit. Background technique [0002] Low Dropout Regulator (LDO) is a step-down DC linear regulator. With the development of SOC (System on Chip, System on Chip) technology, it is widely used in computers, communications, instrumentation, and consumer electronics. , camera surveillance and other industry applications are ubiquitous. Although compared with the DC-DC switching voltage converter, the efficiency of the LDO is lower, but it has the advantages of fewer peripheral components, small ripple, low noise, small chip area, and simple circuit structure, so the LDO is used in power management chips. has always held a large proportion. [0003] With the improvement of integration, more and more LDOs are integrated into the SOC chip as a sub-module of the SOC chip to supply power to a key module, and a powe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F1/56
Inventor 徐光磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products