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20119 results about "Crystallite" patented technology

A crystallite is a small or even microscopic crystal which forms, for example, during the cooling of many materials. The orientation of crystallites can be random with no preferred direction, called random texture, or directed, possibly due to growth and processing conditions. Fiber texture is an example of the latter. Crystallites are also referred to as grains. The areas where crystallites meet are known as grain boundaries. Polycrystalline or multicrystalline materials, or polycrystals are solids that are composed of many crystallites of varying size and orientation.

Semiconductor device and method for manufacturing the same

A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.
Owner:SEMICON ENERGY LAB CO LTD

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.
Owner:SONY CORP

Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses

InactiveUS20070032040A1Reduce and minimiseElectrical losses are reducedSolid-state devicesSemiconductor/solid-state device manufacturingInter layerSemiconductor structure
The present invention provides a method of manufacturing a multilayer semiconductor structure featuring reduced ohmic losses with respect to standard multilayer semiconductor structures. The semiconductor structure comprises a high resistivity silicon substrate with resistivity higher than 3 KΩ.cm, an active semiconductor layer and an insulating layer in between the silicon substrate and the active semiconductor layer. The method comprises suppressing ohmic losses inside the high resistivity silicon substrate by increasing, with regard to prior art devices, charge trap density between the insulating layer and the silicon substrate. In particular this may be obtained by applying an intermediate layer in between the silicon substrate and the insulating layer, the intermediate layer comprising grains having a size, wherein the mean size of the grains of the intermediate layer is smaller than 150 nm, preferably smaller than 50 nm.
Owner:UNIV CATHOLIQUE DE LOVAIN

High-strength hot-rolled steel sheet having excellent stretch flangeability, and method of producing the same

The invention provides a thin high-strength hot-rolled steel sheet with a thickness of not more than 3.5 mm which has excellent stretch flangeability and high uniformity in both shape and mechanical properties of the steel sheet, as well as a method of producing the hot-rolled steel sheet. A slab containing C: 0.05-0.30 wt %, Si: 0.03-1.0 wt %, Mn: 1.5-3.5 wt %, P: not more than 0.02 wt %, S: not more than 0.005 wt %, Al: not more than 0.150 wt %, N: not more than 0.0200 wt %, and one or two of Nb: 0.003-0.20 wt % and Ti: 0.005-0.20 wt % is heated at a temperature of not higher than 1200° C. The slab is hot-rolled at a finish rolling end temperature of not lower than 800° C., preferably at a finish rolling start temperature of 950-1050° C. A hot-rolled sheet is started to be cooled within two seconds after the end of the rolling, and then continuously cooled down to a coiling temperature at a cooling rate of 20-150° C./sec. The hot-rolled sheet is coiled at a temperature of 300-550° C., preferably in excess of 400° C. A fine bainite structure is obtained in which the mean grain size is not greater than 3.0 mum, the aspect ratio is not more than 1.5, and preferably the maximum size of the major axis is not greater than 10 mum.
Owner:KAWASAKI STEEL CORP

Method for improving performance of 700MPa grade V-N micro-alloying high-strength weathering steel

The invention discloses a method for improving the performance of 700 MPa grade V-N microalloyed high strength weathering steel. The method is specific to the characteristics of the sheet billet continuous casting and tandem rolling technology and metallurgy component, and adopts an electric furnace or a revolving furnace to smelt, refine, continuously cast sheet billet which directly enters into a roller hearth to heat after a casting blank concretes, or soaking furnace, hot rolling, laminar flow cooling and wind-up process flow. The chemical composition of molten steel is :C occupies less than or equal to 0.08Wt. percent, Si occupies from 0.25 to 0.75Wt. percent, Mn occupies from 0.2 to 2.0Wt.percent, P occupies less than or equal to 0.025Wt. percent, S occupies less than or equal to 0.040Wt. percent, Cu occupies from 0.25 to 0.60Wt. percent, Cr occupies from 0.30 to 1.25 Wt.percent, Ni occupies less than or equal to 0.65Wt. percent, V occupies from 0.02 to 0.20Wt. percent and N occupies from 0.015 to 0.030 Wt. percent. The invention takes full advantages of the characteristics of the sheet billet continuous casting and tandem rolling short flow process and adopts the V-N microalloyed technique to produce 700 MPa grade high strength weathering steel under the thinning function of VN and V (C, N) nanometer scale precipitate on crystal grain in casting blank of the sheet billet continuous casting and tandem rolling flow and the theory of precipitation strength. By the optimization design of the metallurgy component of V-N microalloyed 700MPa grade high strength weathering steel, the invention increases the low temperature impact ductility of coil of strip and improves the shaping property.
Owner:GUANGZHOU PEARL RIVER STEEL & IRON

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB / NCC / CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
Owner:TAIWAN SEMICON MFG CO LTD
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