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6730results about "By pulling from melt" patented technology

Ald Apparatus and Method

InactiveUS20070269983A1Enhanced advantageMaterial utilization efficiency is increasedLiquid surface applicatorsBy zone-melting liquidsCompound (substance)Engineering
Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses (700, 700′, 700″) and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source (722) within a source space comprising: sensing the accumulation of the chemical on a sensing surface (711); and controlling the temperature of the chemical source depending on said sensed accumulation.
Owner:SUNDEW TECH

Resonant cavity light emitting devices and associated method

A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.
Owner:SORAA

Silicon focus ring and method for producing the same

There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms / cm<3 >and not more than 1.5x10<18 >atoms / cm<3>, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms / cm<3 >and not more than 1.5x10<18 >atoms / cm<3 >is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.
Owner:SHIN ETSU CHEM IND CO LTD

Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
Owner:HOYA CORP +1

Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.
Owner:OHIO AEROSPACE INST +1

Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby

A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an embodiment includes forming a silicon melt in a crucible inside a chamber, preparing a seed crystal on the silicon melt, and growing a single crystal ingot from the silicon melt, and pressure of the chamber may be controlled in a range of 90 Torr to 500 Torr.
Owner:LG SILTRON

Method of growing a thin film onto a substrate

A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.
Owner:ASM IP HLDG BV

Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same

The present invention provides a method for preparing epitaxial-substrate, for growing a multilayered structure of GaN based semiconductor layers on the epitaxial-substrate so as to construct a semiconductor device such as blue-emitting laser diode and LED. The method for preparing the epitaxial-substrate encompasses (a) growing a first GaN based semiconductor layer on a bulk-substrate; (b) growing an InGaN based semiconductor layer on the first GaN based semiconductor layer; (c) growing a second GaN based semiconductor layer on the InGaN based semiconductor layer; and (d) separating the second GaN based semiconductor layer from the first GaN based semiconductor layer to provide the epitaxial-substrate. The epitaxial-substrate having a high crystallographic perfection and an excellent surface morphology is obtained simply and in a short time. The defect density of the single crystalline GaN based semiconductor layer film grown on the epitaxial-substrate is greatly reduced.
Owner:KK TOSHIBA

Scintillating substance and scintillating wave-guide element

The invention is related to nuclear physics, medicine and oil industry, namely to the measurement of x-ray, gamma and alpha radiation; control for trans uranium nuclides in the habitat of a man; non destructive control for the structure of heavy bodies; three dimensional positron-electron computer tomography, etc.The essence of the invention is in additional ingredients in a chemical composition of a scintillating material based on crystals of oxyorthosilicates, including cerium Ce and crystallized in a structural type Lu2SiO5.The result of the invention is the increase of the light output of the luminescence, decrease of the time of luminescence of the ions Ce3+, increase of the reproducibility of grown crystals properties, decrease of the cost of the source melting stock for growing scintillator crystals, containing a large amount of Lu2O3, the raise of the effectiveness of the introduction of SCintillating crystal luminescent radiation into a glass waveguide fibre, prevention of cracking of crystals during the production of elements, creation of waveguide properties in scintillating elements, exclusion of expensive mechanical polishing of their lateral surface.
Owner:SOUTHBOURNE INVESTMENTS

Nitride Single Crystal Seeded Growth in Supercritical Ammonia with Alkali Metal Ion

The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and / or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.
Owner:AMMONO SP Z O O (PL) +1

Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same

The crystal orientations of monocrystalline semiconductor wafers may be varied by four parameters. The first parameter is the type of crystal seed used to grow the monocrystalline semiconductor ingot from which the wafers are cut. The second parameter is the angle at which the wafer is sliced from the ingot. The third parameter is the crystal plane towards which the wafer is cut. And, the fourth parameter is the position of the orientation indication feature that is used to align the wafer during processing. Different combinations of these parameters provide variations of non-standard crystal orientations of monocrystalline semiconductor wafers and semiconductor-on-insulator substrates such as silicon-on-insulator.
Owner:INTEL CORP

Doped organic semiconductor materials and process for their preparation

The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.
Owner:NOVALED GMBH

Method and apparatus for determining weight of moving mailpieces

The invention pertains to a mailpiece weight measuring apparatus for use with a high speed automatic mailpiece processing system. The weight measuring apparatus measures the inertial mass of the mailpiece as the weight equivalent. The apparatus includes a device for determining a first velocity of a mailpiece, a device for imparting a force to the mailpiece in a direction co-linear with the first velocity so that the mailpiece exits said force impacting device at a second velocity, a device for determining the second velocity of the mailpiece, a device for determining a change in a parameter proportional to the force imparted on the mailpiece, and a device for determining the weight of the mailpiece based upon the determined first velocity, second velocity and change in the parameter.
Owner:DMT SOLUTIONS GLOBAL CORP

Epitaxial growth of compound nitride semiconductor structures

Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
Owner:APPLIED MATERIALS INC

Aluminum oxide material for optical data storage

InactiveUS6846434B2Increase of write/read rateHigh data storage densityPolycrystalline material growthPhotosensitive materialsVacancy defectDopant
The present invention provides aluminum oxide crystalline materials including dopants and oxygen vacancy defects and methods of making such crystalline materials. The crystalline materials of the present invention have particular utility in optical data storage applications.
Owner:LANDAUER INC

Method for reducing defect concentration in crystals

A method for removing defects at high pressure and high temperature (HP / HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
Owner:SLT TECH

Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride

A method for large-scale manufacturing of gallium nitride includes a process for reducing and / or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.
Owner:SLT TECH

Microvolume crystallization method employing multiple lumens

InactiveUS6872250B2Facilitates the device being rotatedMaterial crystallisationPolycrystalline material growthCrystallizationCrystal
A method for determining crystallization conditions for a material, the method comprising: taking a microfluidic device comprising one or more lumens having microvolume dimensions and a plurality of different crystallization samples within the one or more lumens, the plurality of crystallization samples comprising a material to be crystallized and crystallization conditions that vary among the plurality of crystallization samples; transporting the plurality of different crystallization samples within the lumens; and identifying a precipitate or crystal formed in the one or more lumens.
Owner:TAKEDA SAN DIEGO

Method and Device For Comminuting and Sorting Polysilicon

The invention relates to a device for comminuting and sorting polycrystalline silicon, comprising an instrument for feeding a coarse polysilicon fraction into a crushing system, the crushing system associated with a sorting system for classifying the polysilicon fraction, wherein the device is provided with a controller which allows variable adjustment of at least one crushing parameter in the crushing system and / or at least one sorting parameter in the sorting system.
Owner:WACKER CHEM GMBH

Silicon Casting Apparatus and Method of Producing Silicon Ingot

A silicon casting apparatus for producing polycrystal silicon ingot by heating a silicon melt (8) held in a mold (4) from above by a heater (3) and cooling it from below while changing the heat exchange area of a heat exchange region (HE), defined between a pedestal (5) having the mold (4) placed thereon and a bottom cooling member (6), in such a manner as to keep pace with the rise of the solid-liquid interface of the silicon melt (8), thereby causing unidirectional solidification upward along the mold (4); and a method of producing polycrystal silicon ingot using such apparatus. According to this production method, the temperature gradient given to the silicon melt (8) can be maintained at constant by adjusting the heat exchange area, so that polycrystal silicon ingot having good characteristics can be produced with good reproducibility.
Owner:KYOCERA CORP

Silicon purifying method, slag for purifying silicon and purified silicon

Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a rotating / driving mechanism for stirring the molten silicon. The molten slag is dispersed in the molten silicon, thereby accelerating the boron removal reaction. It is further effective to use a slag containing at least 45 percent by mass of silicon oxide or to blow gas mixed with water vapor into the molten silicon for refining reaction.
Owner:SHARP KK
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