283 results about "Plane orientation" patented technology

A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.

An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of PZT, and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention has a multilayer structure in which a metal electrode film having a plane orientation of (100), a (Bi,Na)TiO3 film, and a (Bi,Na,Ba)TiO3 film having a plane orientation of (001) are laminated in this order. The piezoelectric thin film of the present invention can be applied to a wide range of fields and uses. For example, with the piezoelectric thin film of the present invention, an angular velocity sensor of the present invention having high sensitivity and a piezoelectric generating element of the present invention having excellent power generation characteristics can be constructed.

The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

A base multilayer body is made by laminating a seed layer and a buffer layer in respective order. The seed layer is an alloy layer containing tantalum (Ta) and at least one type of other metal, and having an amorphous structure or a microcrystal structure. The buffer layer is an alloy layer having a [001] plane orientation hexagonal close-packed structure and containing at least one type of a group VI metal and at least one type of a group IX metal in the periodic table. With this configuration, a magnetic layer providing a desired magnetic characteristic(s) can be laminated on the thinned base multilayer body.