4855results about How to "High melting point" patented technology

The present invention discloses novel imidazolidinones which have HCV protease inhibitory activity as well as methods for preparing such compounds. In another embodiment, the invention discloses pharmaceutical compositions comprising such imidazolidinones as well as methods of using them to treat disorders associated with the HCV protease.

A method of alkene polymerization and copolymarization with f load non- metallocene catalyst: emplying the load non- metallocene catalyst and catalyst promoter forming the catalytic system, introducing polymer monomer or comonomer for alkene polymerization or copolymarization; adding the load non- metallocene catalyst into dissolvent and mixing with catalyst promoter and then transferring the mixture into polymerization reactor, or adding the load non- metallocene catalyst and catalyst promoter into the polymerization reactor in order or simultaneously. The catalyst promoter is chosen from: alkyl aluminium, aluminium oxane, Lewis acid, boralotano, alkyl borane or alkyl borane ammonium salt. The load non- metallocene catalyst is loaded to multiple poral solid by employing methods of solution dipping, equivoluminal dipping or solution dipping-before-equivoluminal dipping to form organic integral of property stable and strong binding force. The invention is characterized by the high alkene polymerization active, high fusion point and good normalization of the produced polymer, and the sastification of the demand of high level product production.

Provided is a light emitting device including a Fresnel lens and / or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an optical element stamped on a surface for improved light extraction and the stamping method used to form such device. An optical element formed on the surface of a semiconductor light emitter reduces reflective loss and loss due to total internal reflection, thereby improving light extraction efficiency. A Fresnel lens or a holographic diffuser may be formed on a surface by wet chemical etching or dry etching techniques, such as plasma etching, reactive ion etching, and chemically-assisted ion beam etching, optionally in conjunction with a lithographic technique. In addition, a Fresnel lens or a holographic diffuser may be milled, scribed, or ablated into the surface. Stamping, an alternative method for forming an optical element, can also be used to form a Fresnel lens or a holographic diffuser on the surface of a semiconductor light emitter. Stamping includes pressing a stamping block against the surface of a light emitting diode. The stamping block has a shape and pattern that are the inverse of the desired optical element. Optionally, stamping can be done before, after, or concurrently with wafer-bonding. Alternatively, a material can be stamped and later bonded to the semiconductor light emitter.

A polymer film capable of forming an optically anisotropic melt phase is, after having been laminated on a base material capable of supporting the shape of the film during heat treatment, is heat-treated at a temperature of from the thermal deformation temperature Tdef of the film to a temperature lower by alpha (alpha=10 to 35° C.) than the melting point Tm of the film until the fusion peak temperature TA of the film attains a temperature which is higher by beta (beta=5 to 30° C.) than the melting point Tm of the film before the heat treatment and is subsequently heat-treated at a temperature of from a temperature not lower than the melting point Tm of the film to a temperature lower than the fuision peak temperature TA for a length of time over which the TA increases by gamma (gamma=5 to 20° C.), and thereafter the base material is removed to produce the film.

Preparation of a pH sensor, the prepared pH sensor, system comprising the same, and measurement using the system. The pH sensor is an extended gate field effect transistor (EGFET) structure. The preparation includes the steps of providing an extended gate ion sensitive field effect transistor comprising an extended gate region, forming a titanium nitride film on the extended gate region by RF sputtering deposition to obtain a pH sensor.

Al2O3—Y2O3—ZrO2 / HfO2 ceramics (including glasses, crystalline ceramics, and glass-ceramics) and methods of making the same. Ceramics according to the present invention can be made, formed as, or converted into glass beads, articles (e.g., plates), fibers, particles, and thin coatings. The particles and fibers are useful, for example, as thermal insulation, filler, or reinforcing material in composites (e.g., ceramic, metal, or polymeric matrix composites). The thin coatings can be useful, for example, as protective coatings in applications involving wear, as well as for thermal management. Certain ceramic particles according to the present invention can be are particularly useful as abrasive particles.

A chromium-based reflective coating for a polymeric substrate, wherein the coating has a thickness of 200 nm or less and is an alloy of chromium and a dopant material, the dopant material being selected from the hexagonally close-packed transition metals, the alloy having a crystal structure of a primary body-centered cubic phase in coexistence with a secondary omega hexagonally close-packed phase.

Weld faces of electrodes for resistance spot welding are formed with a suitable area of protrusions and / or intrusions. The size, shape, and elevation or depths of the protrusions or intrusions are determined for the formation of suitable spot welds in and between metal workpieces such as aluminum or steel panels for vehicle bodies. The protrusions or intrusions are also conceived and used to form an image on at least a visible surface of the welded article to produce an attractive appearance on the surface of the welded sheet.

Weld faces of electrodes for resistance spot welding are formed with a suitable area of protrusions and / or intrusions. The size, shape, and elevation or depths of the protrusions or intrusions are determined for the formation of suitable spot welds in and between metal workpieces such as aluminum or steel panels for vehicle bodies. The protrusions or intrusions are also conceived and used to form an image on at least a visible surface of the welded article to produce an attractive appearance on the surface of the welded sheet.

For hermetic encapsulation of a component, which includes a chip with component structures applied on a substrate in a flip-chip construction, a material is applied onto the lower edge of the chip and regions of the substrate abutting the chip, and then a first continuous metal layer is applied on the back side of the chip and on the material, as well as on edge regions of the substrate abutting the material. For hermetic encapsulation, a second sealing metal layer is subsequently applied by a solvent-free process at least on those regions of the first metal layer that cover the material.

The invention discloses a method for preparing Ti3SiC2 modified C / SiC composite material, comprising the following steps: firstly, carrying out ultrasonic cleaning and drying on the pre-prepared body to be modified; compounding the size with distilled water, cellulose sodium carboxy methyl and TiC powder; then carrying out vacuum infiltration combined with pressure infiltration on the pre-prepared body and refrigeration and drying in vacuum; coating industrial silicon powder on the surface of the pre-prepared body; calcining the pre-prepared body in a vacuum furnace to lead the silicon to fuse to penetrate into the pre-prepared body; and cooling the pre-prepared body gradually to room temperature after full reaction in the vacuum furnace. As SI method is adopted to lead C / C or C / SiC composite material to be firstly internally filled with TiC granules, then MI method is adopted to penetrate silicon fusant, and TiC reacts with Si to generate Ti3SiC2 and SiC, the content of residue Si in the composite material is reduced, and the Ti3SiC2 phase in-situ generated in the C / SiC composite material causes the use temperature of the modified C / SiC composite material to rise from 1420 DEG C in the prior art to 1500-2300 DEG C and the fracture toughness property to rise from 8MPa.m in the prior art to 9-16 MPa.m.