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4033 results about "Diffusion layer" patented technology

In electrochemistry, the diffusion layer, according to IUPAC, is defined as the "region in the vicinity of an electrode where the concentrations are different from their value in the bulk solution. The definition of the thickness of the diffusion layer is arbitrary because the concentration approaches asymptotically the value in the bulk solution". The diffusion layer thus depends on the diffusion coefficient (D) of the analyte and for voltammetric measurements on the scan rate (V/s). It is usually considered to be some multiple of (Dt)¹⸍² (where 1/t = scan rate). At slow scan rates, the diffusion layer is large, on the order of micrometers, whereas at fast scan rates the diffusion layer is nanometers in thickness. The relationship is described in part by the Cottrell equation.

Methods for manufacturing components from articles formed by additive-manufacturing processes

ActiveUS20130071562A1Reduces and substantially eliminates internal defectImprove surface roughnessTurbinesAdditive manufacturing apparatusDiffusion layerAdditive layer manufacturing
A method is provided for manufacturing a component. The method includes forming a diffusion coating on a first intermediate article formed by an additive manufacturing process. The diffusion coating is removed from the first intermediate article forming a second intermediate article having at least one enhanced surface. The diffusion coating is formed by applying a layer of coating material on at least one surface of the first intermediate article and diffusion heat treating the first intermediate article and the layer. The diffusion coating comprises a surface additive layer and a diffusion layer below the surface additive layer. The formation of the diffusion coating and removal thereof may be repeated at least once.
Owner:HONEYWELL INT INC

Magnetic sensor having vertical hall device and method for manufacturing the same

A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecting a magnetic field parallel to a surface of the substrate in a case where a current flows through the magnetic field detection portion in a vertical direction of the substrate. The semiconductor region is a diffusion layer including a conductive impurity doped and diffused therein. The semiconductor region is made of diffusion layer so that the device has high design degree of freedom.
Owner:DENSO CORP

MOS type image sensor

A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area. To make the MOS type image sensor finer, each of the pixels consists of a second p-well region having a lower impurity concentration than a first p-well region disposed in the peripheral circuitry area; a photodiode having a first main electrode region made of the second p-well region and a second main electrode region formed as a first n-diffusion layer disposed at the surface of the second p-well region; a read transistor having a first main electrode region made of the first n-diffusion layer, a second main electrode region formed as a second n-diffusion layer disposed at the surface of the second p-well region, a gate insulation film disposed on the surface of the second p-well region between the first and second n-diffusion layers, and a gate electrode disposed on the gate insulation film and connected to a read signal line; and an amplification transistor disposed in a third p-well region, having a gate electrode connected to the second main electrode region of the read transistor, a first main electrode region connected to an output signal line, and a second main electrode region. Since the impurity concentration of the second p-well region is low, scaled design rules are employable without causing "white pixels", sensitivity deterioration, signal read voltage increase, or short-channel effect.
Owner:NORTH PLATE SEMICON LLC
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