8529results about "Silicon organic compounds" patented technology

An organic electroluminescence device includes: a cathode; an anode; and a single-layered or multilayered organic thin-film layer provided between the cathode and the anode. In the organic electroluminescence device, the organic thin-film layer includes at least one emitting layer, and the at least one emitting layer includes at least one phosphorescent material and a host material represented by the following Formula (1).Ra—Ar1—Ar2—Rb   (1)In Formula (1):Ra and Rb each represent a substituted or non-substituted benzene ring or a substituted or non-substituted condensed aromatic hydrocarbon ring selected from a group consisting of a naphthalene ring, a chrysene ring, a fluoranthene ring, a triphenylene ring, a phenanthrene ring, a benzophenanthrene ring, a dibenzophenanthrene ring, a benzotriphenylene ring, a benzochrysene ring and a picene ring; andAr1 and Ar2 each represent a substituted or non-substituted benzene ring or a substituted or non-substituted condensed aromatic hydrocarbon ring selected from a group consisting of a naphthalene ring, a chrysene ring, a fluoranthene ring, a triphenylene ring, a benzophenanthrene ring, a dibenzophenanthrene ring, a benzotriphenylene ring, a benzochrysene ring and a picene ring.

Organosilicon compounds of the general formula I and / or II are produced by reacting silanes of the general formula III with alcohols of the general formula R′—OH, with elimination of R—OH, wherein R—OH may be continuously separated from the reaction mixture by distillation. The organosilicon compounds may be used in rubber mixtures. Compounds, such as rubbers, produced using such organosilicon compounds.

A γ,δ-unsaturated carboxylic acid silyl ester is prepared by reacting an α,β-unsaturated carboxylic acid ester with a hydrosilane or hydrosiloxane in the presence of tris(pentafluorophenyl)borane. γ,δ-Unsaturated carboxylic acid derivatives are readily prepared through fewer steps and in high yields.

Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.