21779 results about "Chlorine" patented technology

During a deposition process, material may deposit not only on the substrate, but also on other chamber components. In a MOCVD chamber, one of those components is the gas distribution showerhead. The showerhead may be cleaned by bombarding the showerhead with radicals generated by a plasma that includes an inert gas and chlorine. In order to generate the plasma, the showerhead may be negatively biased or floating relative to the substrate support. The showerhead may comprise stainless steel and be coated with a ceramic coating.

Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and / or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within-wafer and wafer-to-wafer uniformity.

To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).

A method for preparing 2,3,3,3-tetrafluoroprop-1-ene comprising (a) providing a starting composition comprising at least one compound having a structure selected from Formulae I, II and III:CX2═CCl—CH2X  (Formula I)CX3—CCl═CH2  (Formula II)CX3—CHCl—CH2X  (Formula III)wherein X is independently selected from F, Cl, Br, and I, provided that at least one X is not fluorine;(b) contacting said starting composition with a first fluorinating agent to produce a first intermediate composition comprising 2-chloro-3,3,3-trifluoropropene and a first chlorine-containing byproduct; (c) contacting said first intermediate composition with a second fluorinating agent to produce a second intermediate composition comprising 2-chloro-1,1,1,2-tetrafluoropropane and a second chlorine-containing byproduct; and (d) catalytically dehydrochlorinating at least a portion of said 2-chloro-1,1,1,2-tetrafluoropropane to produce a reaction product comprising 2,3,3,3-tetrafluoroprop-1-ene.

A continuous and modular process converts lignocellulosic materials for the production of ethanol principally and / or chemicals such as methanol, butanediol, propanediol, hydrocarbon fuel, etc. Renewable lignocellulosic biomass such as but not all inclusive hardwoods (gum, beech, oak, sweet gum, poplar, eucalyptus, etc.), soft woods (pines, firs, spruce, etc.), corn stovers, straws, grasses, recycled papers, waste products from pulp and paper mills, etc can be used as feedstock. The process is designed to be modular and the feed entry point can be selected to adapt to different biomass feedstock. Lignocellulosic biomass such as hardwood and softwood are subjected to chemical / pressure treatment stages using potent and selective chemicals such as sodium chlorite / acetic acid (anhydrous) and chlorine / chlorine dioxide to separate the main components—lignin, cellulose (glucose) and hemicelluloses (xylose, arabinose, galactose)—into three process streams. The separated carbohydrates are further subjected to washing, cleaning, neutralization, and / or mild hydrolysis and subsequently fermented to produce ethanol. Residual lignin and extractives remained with the cellulose are removed by chemical treatment steps to enhance the fermentations of cellulose. Pre-hydrolysate after neutralization to neutralize and remove toxic components such as acetic acid, furfural, phenolics, etc. containing (xylose, arabinose, galactose) and hexoses (glucose) can be either separately or together with the purified cellulosic fraction fermented to produce ethanol. Approximately 100 gallons of ethanol, suitable to be used as a fuel, can be produced from one dried ton of wood. Significant amount of lignin are separated as a by-product and can be converted to hydrocarbon fuel, surfactant, drilling aid, or can be incinerated for generation of power and steam.

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves only a sub-monolayer of oxygen (typically 1×1013-1×1015 / cm2 of oxygen) at the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process in a chlorine containing environment which heats the silicon germanium, strained silicon, or thin silicon-on-insulator surface sufficiently to remove the remaining oxygen from the surface. By introducing a small amount of chlorine containing gases, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface. A passivation film is deposited on the exposed silicon. The passivation film may include chlorine. The passivation film may prevent contamination of the silicon surface by chemical species from the later sublimation, which may be at a higher temperature than the earlier sublimation. Subsequently, a remaining portion of the halogen-containing pre-clean material and the passivation film are sublimated. A target material, such as a conductive material, may subsequently be deposited on the substrate surface.

A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3  (I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.

A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CH3COOH) or acetic acid / ammonium hydroxide (NH4OH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a H2 plasma. BTA passivation may be optionally performed on the substrate.

In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

A composition of matter comprising an amine acylated with a hydrocarbyl group substituted carboxylic acylating agent containing an average of from 1.3 to 1.6 groups derived from α,β-unsaturated carboxylic compounds per Mn of the hydrocarbyl group, wherein the hydrocarbyl group has Mn determined by GPC ranging from 1500 to 3000, the amine comprises polyamine bottoms and said acylated amine has total base number (TBN) ranging from 17 to 35. A method for preparing the composition, lubricating oils containing the composition and, in another embodiment, lubricating oil compositions of this invention further comprising a metal overbased sulfonate detergent.

An interconnect layer is fabricated using a tungsten hard mask by forming a tungsten based layer over an aluminum based layer. A photoresist layer is deposited over the tungsten based layer and patterned. The tungsten based layer is patterned by applying a fluorine-based etchant using the photoresist layer as an etch mask. Then the aluminum based layer is patterned by applying a chlorine based etchant using the tungsten based layer as an etch mask.

A semiconductor processing member is provided, including a body and a plasma spray coating provided on the body. The coating is an ABO or ABCO complex oxide solid solution composition, where A, B and C are selected from the group consisting of La, Zr, Ce, Gd, Y, Yb and Si, and O is an oxide. The coating imparts both chlorine and fluorine plasma erosion resistance, reduces particle generation during plasma etching, and prevents spalling of the coating during wet cleaning of the semiconductor processing member.

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

Microstructured optical fiber and method of making. Glass soot is deposited and then consolidated under conditions which are effective to trap a portion of the consolidation gases in the glass to thereby produce a non-periodic array of voids which may then be used to form a void containing cladding region in an optical fiber. Preferred void producing consolidation gases include nitrogen, argon, CO2, oxygen, chlorine, CF4, CO, SO2 and mixtures thereof.

A computerized method for monitoring a water utility network, the water utility network comprising a network of pipes for delivering water to consumers and a plurality of meters positioned within the pipes across the water distribution network. The method includes receiving meter data representing parameters measured by the meters, such as flow, pressure, chlorine level, pH and turbidity of the water being distributed through the pipes. The method also includes receiving secondary data from sources external to the meters and representing conditions affecting consumption of water in a region serviced by the water utility network such as weather and holidays. The meter and secondary data is analyzed using statistical techniques to identify water network events including leakage events and other events regarding quantity and quality of water flowing through the pipes and operation of the water network. The events are reported to users via a user interface.

The invention discloses an insecticide for agricultural pests. The insecticide contains 3-chloro-N<1>-(2-methyl-4-heptafluoroisopropyl phenyl)-N<2>-(1-methyl-1-cyanoethyl)phthalic diamide shown as a structural formula (I). The insecticide has ultrahigh insecticidal activity, high safety, reasonable toxicity, ecological toxicity and environmental compatibility, and belongs to a low-toxicity and environment-friendly pesticide.

A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.

One or more materials selected from 1,1,1,3,3-pentachloropropane, 1,1,3,3-tetrachloropropene and 1,3,3,3-tetrachloropropene are used as the specific materials described above. Before submitting the materials and HF to a fluorination reaction, almost all water is removed from them.To continuously manufacture useful intended products efficiently as well as to prevent deactivation of the catalyst and the accumulation of organic substances with high boiling points when manufacturing said useful 1,1,1,3,3-pentafluoropropane and / or 1-chloro-3,3,3-trifluoropropene, by fluorinating the specific materials with HF in the presence of a catalyst.

The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a high film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas. A film thickness of the metal-nitride film formed during the one supply term of the metal-source gas is not more than 60 nm. According to the invention, although the film-forming process is conducted at a relatively high temperature, a metal-nitride film can be deposited whose chlorine density is low, whose resistivity is low, and in which fewer cracks may be generated.

Disclosed are mixtures and compositions for controlling invertebrate pests relating to combinations comprising (a) 3-bromo-N-[4-chloro-2-methyl-6-[(methylamino)carbonyl]phenyl]-1-(3-chloro-2-pyridinyl)-1H-pyrazole-5-carboxamide, and its N-oxides, and suitable salts thereof and a component (b) wherein the component (b) is at least one compound or agent selected from neonicotinoids, cholinesterase inhibitors, sodium channel modulators, chitin synthesis inhibitors, ecdysone agonists, lipid biosynthesis inhibitors, macrocyclic lactones, GABA-regulated chloride channel blockers, juvenile hormone mimics, ryanodine receptor ligands, octopamine receptor ligands, mitochondrial electron transport inhibitors, nereistoxin analogs, pyridalyl, flonicamid, pymetrozine, dieldrin, metaflumizone, biological agents, and suitable salts of the foregoing. Also disclosed are methods for controlling an invertebrate pest comprising contacting the invertebrate pest or its environment with a biologically effective amount of a mixture or composition of the invention.

A method for preparing 2,3,3,3-tetrafluoroprop-1-ene comprising (a) providing a starting composition comprising at least one compound having a structure selected from Formulae I, II and III: CX 2 =CCl-CH 2 X (Formula I) CX 3 -CCl=CH 2 (Formula II) CX 3 -CHCl-CH 2 X (Formula III) wherein X is independently selected from F, Cl, Br, and I, provided that at least one X is not fluorine; (b) contacting said starting composition with a first fluorinating agent to produce a first intermediate composition comprising 2-chloro-3,3,3-trifluoropropene and a first chlorine-containing byproduct; (c) contacting said first intermediate composition with a second fluorinating agent to produce a second intermediate composition comprising 2-chloro-1,1,1,2-tetrafluoropropane and a second chlorine-containing byproduct; and (d) catalytically dehydrochlorinating at least a portion of said 2-chloro-1,1,1,2-tetrafluoropropane to produce a reaction product comprising 2,3,3,3-tetrafluoroprop-1-ene.