The invention discloses a texturing and cleaning process method of a polysilicon wafer. The method comprises the following steps of 1, firstly, putting the polysilicon wafer in a mixing solution of HF (hydrogen fluoride) and HNO3 (hydrogen nitrate), and soaking; 2, putting the polysilicon wafer corroded by acid into pure water, and cleaning; 3, putting the polysilicon wafer in an alkaline solution, carrying out alkaline corrosion treatment, adding a texturing additive into the alkaline solution, and carrying out secondary texturing on the polysilicon wafer; 4, putting the polysilicon wafer corroded by alkali into the pure water, and cleaning; 5, putting the polysilicon wafer in a mixing solution of HCl (hydrogen chloride) and HF, and soaking; 6, putting the polysilicon wafer corroded by the acid into the pure water, and cleaning; and 7, drying the treated polysilicon wafer. The process method has the advantages that on the premise of not changing other processes, the final converting efficiency of the polysilicon wafer is improved by 0.2% to 0.3%, and the purpose of final efficiency stacking of a battery sheet is realized.