Microstructured optical fiber and method of making. Glass soot is deposited and then consolidated under conditions which are effective to trap a portion of the consolidation gases in the glass to thereby produce a non-periodic array of voids which may then be used to form a void containing cladding region in an optical fiber. Preferred void producing consolidation gases include nitrogen, argon, CO2, oxygen, chlorine, CF4, CO, SO2 and mixtures thereof.
A curved liquid crystal display panel includes an upper substrate having a curved shape, a liquid crystal layer, a lower substrate having a curved shape, where the lower substrate is combined with the upper substrate and the liquid crystal layer is disposed between the upper substrate and the lower substrate, and a heating line disposed on at least one of the upper substrate and the lower substrate and which provides heat to the liquid crystal layer such that a temperature of the liquid crystal layer increases.
A solar cell includes an improved anti-reflection (AR) coating provided on an incident glass substrate. In certain example embodiments, the AR coating includes a layer comprising porous silica. The porous nature of the silica inclusive layer permits the refractive index (n) of the silica inclusive layer to be reduced, thereby decreasing reflection and permitting more radiation to make its way to the active layer(s) of the solar cell. In certain example embodiments, a coating solution may be formed by mixing a colloidal silica solution and a polymeric silica solution, then applying the coating solution to a substrate and curing the same in order to form an AR coating.
An optical fiber includes: a core at a center; a first cladding layer; a second cladding layer; and a third cladding layer. A maximum refractive index of the core is greater than any of maximum refractive indices of the first cladding layer, the second cladding layer, and the third cladding layer, and the maximum refractive index of the second cladding layer is smaller than any of the maximum refractive indices of the first and the third cladding layer. Additionally, a ratio of a2 / a1 is not less than about 2.5 and not more than about 4.5, where a1 represents the radius of the core, and a2 represents the radius of an outer periphery of the first cladding layer, and a relative refractive index difference of the core with respect to a maximum refractive index of the third cladding layer is not less than 0.20% and not more than 0.70%.
A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
The present invention is directed to a multilayer optical film, for use in a display or component thereof, comprising a substrate having a topmost layer that is an anti-reflective layer having a nano-structured surface, the layer comprising elongated-shaped silica particles. Another aspect of the present invention relates to a method of forming the single anti-reflective layer and its use in various applications including displays and components thereof.
A phototherapy mask uses optical fibers coupled to LEDs to irradiate a treated epidermal skin area on or around a person's face with specific wavelengths of light in selected dosages (J / cm2). Peripheral configuration of LEDs on the mask eliminates problems of heat dissipation, and multi-mode optical fiber is employed for diffusion of light uniformly over the treated epidermal skin area.
A solid-state imaging device includes a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.
A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 forms a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.