A method of forming, on a substrate having a recess pattern, a
silicon carbide film having a reflective index of 2.3 or higher as measured at 633 nm, includes (i) supplying an organosilane precursor in a pulse to a reaction space where the substrate is placed, which precursor has a formula of RSiH3 wherein R is a
hydrocarbon-containing
moiety including at least one unsaturated bond; (ii) continuously supplying a
plasma-generating gas to the reaction space, which
plasma-generating gas is selected from the group consisting of
inert gases and
hydride gases; (iii) continuously applying RF power to the reaction space to generate a
plasma which excites the precursor; and (iv) repeating steps (i) through (iii), thereby forming a
silicon carbide film on the substrate, which
silicon carbide film has a reflective index of 2.3 or higher as measured at 633 nm.