The invention relates to a drive circuit applied to a power switch tube MOSFET, in particular to a drive circuit of a silicon carbide MOSFET, and belongs to the technical field of drive circuits. The drive circuit aims to solve the problem that when an MOSFET in an existing drive circuit is turned off, the reliability is poor. The drive circuit comprises a PWM control circuit, a drive pulse amplifying circuit, a drive resistor Rg, a first diode D1, a resistor R1, a PNP triode Qoff, a second diode D2 and a capacitor C. According to the drive circuit, the PNP triode Qoff, the resistor R1 and the capacitor C form an MOSFET turn-off circuit; when the MOSFET is turned off quickly, a gate pole positive voltage spike caused by Miller currents is effectively suppressed; meanwhile, a gate pole negative voltage spike can also be suppressed through the second diode D2 and the capacitor C, it is guaranteed that the MOSFET is turned off safely and reliably, and the performance advantages of the silicon carbide MOSFET can be given to full play.