114results about How to "Reduce Particle Generation" patented technology

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

A medical prosthesis for use within the body which is formed of radiation treated ultra high molecular weight polyethylene having substantially no detectable free radicals, is described. Preferred prostheses exhibit reduced production of particles from the prosthesis during wear of the prosthesis, and are substantially oxidation resistant. Methods of manufacture of such devices and material used therein are also provided.

There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms / cm<3 >and not more than 1.5x10<18 >atoms / cm<3>, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5x10<17 >atoms / cm<3 >and not more than 1.5x10<18 >atoms / cm<3 >is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.

While periphery or peripheries of workpiece(s) W lifted in floating fashion by simultaneous suction and expulsion of gas(es) between pair(s) of first and second, or upper and lower, transport stages 14, 15 is / are retained by plurality of elevator pins 16, respective transport stage(s) is / are inverted vertically and workpiece(s) is / are transferred from upper first transport stage(s) to lower second transport stage(s) such that workpiece(s) W is / are lifted in floating fashion thereabove by simultaneous suction and expulsion of gas(es) in accompaniment to lowering of respective elevator pin(s) at said first transport stage(s).

A process comprises forming ruthenium tetroxide by blowing ozone-containing gas into crude ruthenium powder while hypochlorous acid is being added to the powder, allowing a hydrochloric acid solution to absorb the ruthenium tetroxide, evaporating the solution to dryness, and roasting the RuOCl3 crystals thus obtained in a hydrogen atmosphere. Thus a high-purity ruthenium material for thin film deposition, typically sputtering targey, is obtained which contains less than 1 ppm each of alkali metal elements, less than 1 ppm each of alkaline earth metal elements, less than 1 ppm each of transition metal elements, less than 10 ppb each of radioactive elements, a total of less than 500 ppm of carbon and gaseous ingredient elements, the material having a purity of ruthenium of at least 99.995% excluding the gaseous ingredient elements.

An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is mounted onto the semiconductor wafer. The carrier wafer has a second notch overlapping at least a portion of the first notch. A side of the carrier wafer facing the semiconductor wafer forms a sharp angle with an edge of the carrier wafer. The carrier wafer has a resistivity lower than about 1×108 Ohm-cm.

A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 μm, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 μm, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced. A target comprises a similar spray deposit. A vacuum deposition apparatus is one in which above component for a vacuum deposition apparatus is applied in a holder of a sample to be deposited, a deposition material source holder, a preventive component and so on.

Provided is an iron silicide sputtering target in which the oxygen as the gas component in the target is 1000 ppm or less, and a manufacturing method of such iron silicide sputtering target including the steps of melting / casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. With this iron suicide sputtering target, the amount of impurities will be reduced, the thickness of the βFeSi2 film during deposition can be made thick, the generation of particles will be reduced, a uniform and homogenous film composition can be yielded, and the sputtering characteristics will be favorable. The foregoing manufacturing method is able to stably produce this target.

A nonmagnetic material particle-dispersed ferromagnetic material sputtering target comprising a mixture of an alloy containing 5 mol % or more and 20 mol % or less of Cr, 5 mol % or more and 30 mol % or less of Pt, and Co as the remainder thereof, and nonmagnetic material particles, wherein the structure of the target includes a phase (A) in which the nonmagnetic material particles are uniformly micro-dispersed in the alloy, and a spherical alloy phase (B) dispersed in the phase (A) in which the ratio of its volume in the target is 4% or more and 40% or less. Obtained is a nonmagnetic material particle-dispersed ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device, and which has high density and generates few particles during sputtering.

The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixed powder of powdery materials of yttria and alumina is sprayed on a substrate to form a sprayed film made of an yttria-alumina complex oxide. Preferably, the powdery material of yttria has a 50 percent mean particle diameter of not smaller than 0.1 μm and not larger than 100 μm, and the powdery material of alumina has a 50 percent mean particle diameter of not smaller than 0.1 μm and not larger than 100 μm. Preferably, the yttria-alumina complex oxide contains at least a garnet phase, and may further contain a perovskite phase.

An electrostatic chuck using the Johnson-Rahbek force, comprising: a dielectric material layer including a ceramics layer and a resin layer formed on the ceramics layer; and an electrode for generating an electrostatic adsorption power.

A method for bonding substrate structures. The method includes providing a transparent substrate structure, the transparent substrate structure comprising a face region and an incident light region, providing a spacer structure, the spacer structure comprising a selected thickness of material, the spacer structure having a spacer face region and a spacer device region, and providing a device substrate structure, the device substrate having a device face region and a device backside region. The method further includes applying a first glue material to the spacer face region and bonding the spacer face region to the face region of the transparent substrate structure. The method also includes applying a second glue material to the spacer device region and bonding the spacer device region to the device face region.

A substrate holding apparatus includes a stage configured to support a substrate to be processed, the stage including a surface, and a continuous convex portion surrounding a predetermined region of the surface which convex portion includes a periphery surface and an upper surface that is positioned higher than the surface of the stage; an electrostatic attraction sheet configured to attract a substrate with electrostatic force, the electrostatic attraction sheet being arranged on the surface of the stage within the region surrounded by the convex portion; a first protection member configured to protect the electrostatic attraction sheet, the first protection member being arranged on the electrostatic attraction sheet and including a side surface and a portion that is arranged to face opposite the upper surface of the convex portion; an adhesive layer that is arranged at least between the electrostatic attraction sheet and the first protection member and is configured to bond the electrostatic attraction sheet and the first protection member; and a second protection member that covers at least the outer peripheral surface of the convex portion and the side surface of the first protection member to conceal at least the adhesive layer.

The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.

A wafer container includes a container body, the internal of which is disposed with a plurality of slots for supporting a plurality of wafers and an opening is formed on one sidewall of which, and a door, which is joined with opening of the container body for protecting the plurality of wafers in the container body, the characteristic in that: a magnetic member is formed at the inner edge of the opening of the container body and a magnet is disposed at the inner surface of the door corresponding to the magnetic member, the magnet being disposed in a magnetic yoke with recessed cross section, with the design of which the magnet on the door attracts the magnetic member at the opening of the container body for the door and the container body to be lock-fastened to each other.

Seal ring or other construction for providing a fluid seal intermediate a pair of opposing surfaces. The seal includes a body formed of a resilient material which is configured as having a series of projections which extend radially outwardly from lateral surfaces thereof such that the seal is self-retaining in a dovetail or other undercut groove.

A method for producing solid metal product is disclosed including the steps of providing carbon and metal bearing compounds in compacts, coating the compacts with treatment materials, encapsulating the compacts with carbonaceous containing materials to form a residual layer, and treating the residual layer before introduction of the compacts into a furnace. The compacts contain carbon containing metal bearing compounds, and are coated with mixtures of carbonaceous materials dispersed within a binder material such as a viscous liquid, molasses, alcohol, or fuel oil. The coated compacts are treated to form a hardened outer residual layer. The outer residual layer provides for a sacrificial outer coating on the compacts that reacts with any oxidizing gaseous components within the furnace, while the carbon containing metal bearing compounds within the compacts are heated and metallized inside the compounds. The outer residual layer provides for improved production of higher purity of metal and carbon nuggets with decreased furnace processing times. Therefore, an increase in purity of the metal product is produced at a lower cost, with minimization of the interaction of the molten metal and slag from nuggets with the furnace hearth surface.

Provided is iron suicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron suicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

A wafer boat which is suitable for supporting wafers in a process furnace is disclosed. The wafer boat includes a base plate, multiple support rods carried by the base plate and multiple wafer support pins carried by each of the support rods. Each of the wafer support pins has an upper surface disposed at an acute angle with respect to a longitudinal axis of each of the support rods. This causes contact of the wafer support pins with the wafer at the wafer's center of gravity and minimizes the contact surface area between the wafer support pins and each wafer.

A film deposition method for a multilayer for a EUV mask blank by which a defect caused by the mixing of a particle in the layer during film formation can be prevented and an ion beam sputtering apparatus suitable for the method are presented. A film deposition method for forming a multilayer for a reflective-type mask blank for EUV lithography on a film deposition substrate by using an ion beam sputtering method, the film deposition method being characterized in that a sputtering target and a film deposition substrate are disposed at opposed positions with a predetermined space, and ion beams are injected to the sputtering target from an ion source which is disposed at a position out of the region where particles move linearly from the film deposition substrate toward the sputtering target.

A coil has an integral fastener portion to facilitate fastening the coil to a shield wall to reduce generation of particulates.

The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixed powder of powdery materials of yttria and alumina is sprayed on a substrate to form a sprayed film made of an yttria-alumina complex oxide. Preferably, the powdery material of yttria has a 50 percent mean particle diameter of not smaller than 0.1 .mu.m and not larger than 100 .mu.m, and the powdery material of alumina has a 50 percent mean particle diameter of not smaller than 0.1 .mu.m and not larger than 100 .mu.m. Preferably, the yttria-alumina complex oxide contains at least a garnet phase, and may further contain a perovskite phase.

Various embodiments of systems and methods related to controlling oil injection for piston cooling in an engine are disclosed. In one embodiment, a method includes during an engine cold start event, enabling oil injection onto a piston of an engine, disabling oil injection after the engine cold start event, and re-enabling oil injection after the engine cold start event based on a first operating parameter.

An apparatus for centering a substrate in a track lithography tool includes a processing chamber having an opening large enough to admit the substrate. The processing chamber includes a substrate support member. The substrate is characterized by a diameter and comprises a mounting surface, a process surface, and an edge. The apparatus also includes a clamped robot blade including a substrate support surface adapted to support the mounting surface of the substrate, two edge contact regions, and a base contact region. The clamped robot blade also includes a clamping system adapted to move at least one of the two edge contact regions or the base contact region from an unclamped position to a clamped position, thereby making contact between the edge of the substrate and the two edge contact regions and the base contact region in the clamped position. The apparatus further includes a robot arm coupled to the clamped robot blade.

An apparatus and method for fabricating semiconductor devices may increase reliability of the semiconductor devices by decreasing generation of particles and enhancing operation efficiency by decreasing the number of cleanings. The apparatus may include a chamber having a cover plate, susceptors for securely placing semiconductor substrates within the chamber, shower heads located on the cover plate to supply reaction gases into the chamber, and a curtain gas line connected to the cover plate to supply heated curtain gases between the shower heads.

A raw material gas supply system (6) supplies a raw material gas to a gas use system (2) kept in a reduced pressure atmosphere. The system includes: a raw material tank (40) for storing a liquid raw material or a solid raw material; a raw material conduit (46) connected at one end to the raw material tank and connected at the other end to the gas use system; a carrier gas supply mechanism (54), connected to the raw material tank, for supplying a carrier gas into the raw material tank while controlling the flow rate of the gas; on-off valves (48, 50) interposed in the raw material conduit; a heater (64) for heating the raw material conduit and the on-off valves; and a temperature control device (92) for controlling the heater, wherein the raw material conduit and the on-off valves are each formed of a metal material having good thermal conductivity.

A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY) / 2(ZnO)m, 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.