The present invention provides a film forming apparatus capable of removing a natural oxide film of a silicon substrate W at a very low temperature, as compared to the related art. The natural oxide film is removed at a low temperature by converting the natural oxide film on the silicon substrate W into a volatile material and evaporating the volatile material. The natural oxide film can be converted into volatile ammonium fluorosilicate by reaction with ammoniumfluoride. A single crystal SiGe film can be grown on the silicon substrate W from which the natural oxide film is removed. The film forming apparatus includes an etching chamber, a SiGe growing chamber, and a substrate transport chamber that transports the silicon substrate in a controlled atmosphere.
An electrostatic latent image is formed on an image carrier. A plurality of development cartridges include toner and are adapted to face the image carrier at a development position, respectively. The development cartridges cause the toner to adhere onto the image carrier to develop the electrostatic latent image as a toner image. A development device is configured to be rotatable around an rotational axis thereof. The development device houses the plurality of development cartridges around the rotational axis. A duct includes an inlet port through which air in the vicinity of the development position is sucked and an outlet port from which the sucked air is exhausted to the outside of the image forming apparatus. The duct covers an outer peripheral surface of the development device.
An integrated heat exchanger which includes a radiator adjoining a condenser and shares corrugated fins disposed in a core formed between the radiator and the condenser, the heat exchanger including a partition for dividing the inside of a tank of the radiator into which cooling water flows; and opening / closing means which is disposed in the partition so as to open when the temperature of the cooling water reaches a given temperature or more, as well as to close when the temperature of the cooling water is less than the given temperature.
Provided is a physical quantity measuring device for reducing the influence of heat, other than the heat of a gas to be measured, on a measuring unit for measuring a physical quantity of the gas to be measured. The physical quantity measuring device according to the present invention includes a chippackage 40 and a casing 11. The chippackage 40 is molded from a polymeric resin, including first and second measuring units measuring first and second physical quantities of the gas to be measured, and a signalprocessing unit being connected to the first and second measuring units, and processing signals transmitted from the first and second measuring units, The casing 11 fixedly stores the chippackage 40, and includes first and second bypass passages 12 and 14 allowing the gas to be measured taken from a main passage 70, to flow in the first measuring unit. In the chip package 40, the signalprocessing unit 44 is disposed between the first and second measuring units. In the casing 11, a cooling unit is formed for allowing the gas to be measured from the main passage 70 to flow between the first measuring unit and the second measuring unit, and cooling the signal processing unit 44.
A solid-state image pickup device includes a pixel unit configured to convert light into an electrical signal, an A / D converter configured to convert a signal read from the pixel unit into a digital signal, a light modulation unit configured to modulate an externally input light beam using the signal digitized by the A / D converter and output a signal light beam based on the signal read from the pixel unit, a timing generation unit configured to generate a synchronization signal used for synchronizing input and output of signals of the pixel unit, the A / D converter, and the light modulation unit, and a controller configured to control readout of the signal.