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Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon

A vertically oriented, heat-insulating ring technology, used in crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as structural design defects, improve enterprise production capacity, improve verticality, and improve crystal surface structure and shape Effect

Inactive Publication Date: 2010-07-14
NINGBO JINGYUAN SOLAR ENERGY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to structural design defects in the supporting thermal field of the existing polycrystalline ingot furnace, it is difficult to meet the above requirements

Method used

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  • Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon
  • Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon
  • Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon

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Experimental program
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Effect test

Embodiment Construction

[0018] The present invention will be further described below in conjunction with accompanying drawing.

[0019] The heat field structure of the moving heat insulating ring in this embodiment includes a crucible 6 placed in the furnace chamber 1, and the heat field of the crucible 6 includes a top heater 3, a side heater 5 and a heat exchange platform at the bottom of the crucible 6 7, wherein the top heater 3 and the side heater 5 are fixed on the electrode 16; the furnace chamber 1 is provided with a side-enclosed heat insulation cage 4, and the crucible 6 and the thermal field are placed in the heat insulation cage In the body 4, the upper end of the heat insulation cage body 4 is connected with the lifting device 15; the top heat insulation board 2 and the lower heat insulation layer 9 are respectively arranged on the top and bottom of the heat insulation cage body 4, wherein the top heat insulation board 2 is fixed and suspended on the electrode 16, and the argon gas input ...

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Abstract

The invention relates to the technical field of polysilicon ingot furnace designing and manufacturing, and aims to provide a follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon. The thermal field structure comprises a furnace chamber with a side surface enclosed heat insulation cage body, a crucible and a thermal field are arranged in the heat insulation cage body, and the upper end of the heat insulation cage body is connected with a lifting device; the upper part and the lower part of the heat insulation cage body are respectively provided with a top heat insulation board and a lower heat insulation body, wherein the top heat insulation board is fixedly suspended on an electrode, the lower heat insulation board and a heat exchange are fixed on a support column, the top heat insulation board and the upper end of the heat insulation cage body are movably connected, and the lower heat insulation board and the lower end of the heat insulation cage body are movably connected; and a circular follow-up heat insulation ring is fixed in the heat insulation cage body through a plurality of connecting devices. The follow-up heat insulation ring thermal field structure for the vertical oriented growth of polysilicon has reasonable design, can increase the grain size of polysilicon, reduce grain boundary and improve the verticality of the growing direction of polysilicon so as to improve the quality of polysilicon ingots, and simultaneously the follow-up heat insulation ring also plays the role of energy consumption reduction.

Description

technical field [0001] The invention relates to the technical field of design and manufacture of a polysilicon ingot furnace, in particular to a thermal field structure of a follower insulation ring for vertically oriented growth of polysilicon. Background technique [0002] There are a large number of grain boundaries in cast polysilicon, and the clean grain boundaries are non-electrically active, which has no or only a slight impact on the minority carrier lifetime, while the segregation or precipitation of impurities will change the electrical activity of the grain boundaries, which will significantly reduce Minority carrier life, the more grain boundaries, the greater the impact; but studies have shown that if the grain boundaries are perpendicular to the device surface, the grain boundaries have little effect on the electrochemical performance of the material, so increasing the grain size and improving the growth direction are important An effective method to improve th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14
Inventor 唐骏傅林坚沈维根石刚
Owner NINGBO JINGYUAN SOLAR ENERGY
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