The invention provides an
avalanche photodiode based on AlInAsSb body material as the multiplication region, comprising: a substrate; a buffer layer epitaxially on the substrate; an N-type
ohmic contact layer epitaxially on the buffer layer and having a cross section of "" Convex" shape, its
lower half is consistent with the shape of the substrate, and its upper half is cylindrical; the
avalanche multiplication layer is epitaxial on the upper surface of the upper half of the N-type
ohmic contact layer, composed of AlxIn1‑xAsySb1‑y Bulk material preparation, the
doping concentration is less than 1016cm-3, the value range of x is: 0≤x≤1, the value range of y is: 0.08≤y≤1; the P-type
charge layer is epitaxial on the
avalanche multiplication layer ; The light absorbing layer is epitaxial on the P-type
charge layer; and the P-type
ohmic contact layer is epitaxially on the light absorbing layer. The
avalanche photodiode has the advantages of
low noise and high
gain-bandwidth product, and at the same time effectively reduces the
dark current, which not only meets the requirement of high sensitivity of the
photodetector, but also realizes the design of energy
band engineering and broadens its application range.