596 results about "Growth time" patented technology

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core / shell and core / multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

An array of long carbon nanotubes (i.e. an array where the average length of the nanotubes is greater than 0.5 millimeters) is prepared by exposing a supported catalyst at elevated temperature to a gas mixture of hydrocarbon, inert gas, and a relatively low percentage of hydrogen. Addition of water vapor to the gas mixture may result in an increase in the length of the nanotubes, an increase the rate of growth, and a decrease in contamination of the array by amorphous carbon. The temperature and growth time are also chosen to minimize the amount of amorphous carbon that forms on the array. Fibers spun from the array have a higher tensile strength compared to known CNT fibers.

Apparatus and Method for Optimizing the Efficiency of Germanium Junctions in Multi-Junction Solar Cells. In a preferred embodiment, an indium gallium phosphide (InGaP) nucleation layer is disposed between the germanium (Ge) substrate and the overlying dual-junction epilayers for controlling the diffusion depth of the n-doping in the germanium junction. Specifically, by acting as a diffusion barrier to arsenic (As) contained in the overlying epilayers and as a source of n-type dopant for forming the germanium junction, the nucleation layer enables the growth time and temperature in the epilayer device process to be minimized without compromising the integrity of the dual-junction epilayer structure. This in turn allows the arsenic diffusion into the germanium substrate to be optimally controlled by varying the thickness of the nucleation layer. An active germanium junction formed in accordance with the present invention has a typical diffused junction depth that is ⅕ to ½ of that achievable in prior art devices. Furthermore, triple-junction solar cells incorporating a shallow n-p germanium junction of the present invention can attain 1 sun AM0 efficiencies in excess of 26%.

The invention discloses a method for synthesizing a zinc oxide nano-tube array by a low-temperature hydrothermal method, which comprises: firstly, preparation of ZnO crystal seed layers; secondly, low-temperature hydrothermal growth of ZnO nano wires; and thirdly, chemical etching of the ZnO nano wires into ZnO nano-tubes. The method adopts the low-temperature hydrothermal method and utilizes pure chemical etching technology to synthesize the ZnO nano-tube array, does not need electrochemical assistance and a template, can prepare the ZnO nano-tubes with controllable pipe diameters on different types of substrates by controlling the concentration of a reactant, the hydrothermal growth time and the etching time of an alkali liquor, has low cost, low reaction temperature, short production cycle and high investment-return rate, can be directly performed in an aqueous solution, and does not generate toxic and harmful waste.

An ice detection system that detects the onset of ice accreation on an aircraft's external surfaces, continuously measures its thickness and growth time history and provides the type of ice, glaze or rime, is disclosed along with an independent way to confirm that the contaminant is known to be ice and only ice. Total impedance data, thermal conductivity value and complex dielectric properties are used to discriminate between ice, water, deicing fluid and snow with measurements made by low cost, low power consumption, low profile, miniature electronic chips, components and devices collocated together on the external surface in a thin pliant patch that does not effect the airflow about the aircraft. The ice detection system provides ice accreation data and warning signals to displays and aural signaling devices in the cockpit for the pilot and to the control console of a ground controller flying the aircraft if it is unmanned.

The invention relates to a method for preparing layered molybdenum disulfide. The layered molybdenum disulfide is in a single-layer or double-layer structure, wherein a chemical vapor deposition method is adopted, elemental molybdenum metal and powdered sulfur is taken as a source, two-dimensional molybdenum disulfide is deposited on the surface of a substrate, the preparation parameters such as deposition temperature and growth time are optimized, and controllable growth of the single-layer or double-layer structure of the high-quality molybdenum disulfide is realized.

The invention discloses a two-dimensional transition metal disulfides (TMDs) monocrystalline, and a preparation method and applications thereof. According to the preparation method, in an inert atmosphere, assist control of the concentration of S or Se in a system is realized with common metal which is capable of reacting with sulfur family elementary substance (S, Se) and hydrogen so as to control sulfuration degree or selenylation degree of a transition metal layer, and controllable growth of TMDs monocrystalline is realized via chemical vapor deposition; deposition temperature is controlled to be 750 to 850 DEG C, and deposition time is controlled to be 5 to 15min so as to complete TMDs monocrystalline preparation; wherein, strict control on high-quality two-dimensional transition metal disulfides monocrystalline is realized via optimization of preparation parameters such as substrate sputtering treatment method, sulfur family elementary substance powder using amount, absorbed S / Se metal area and kinds, hydrogen concentration, growth temperature, and growth time.

A method of forming an array of nanostructures includes forming a plurality of seed points on a surface of a substrate, and growing masks from the seed points to create masked regions of the substrate underlying the masks. A remainder of the substrate comprises an unmasked region. Each mask and masked region increase in size with growth time while the unmasked region of the substrate decreases in size. During the growing, the unmasked region is etched to remove material from the substrate in a depth direction, and, simultaneously, unetched structures are formed from the masked regions of the substrate underlying the masks. Each of the unetched structures has a lateral size that increases with depth.

Disclosed herein is a method for growing a semi-insulating GaN layer with high sheet resistance by controlling the size of grains through changes in growth temperature at the initial growth stage of the layer, without doping of dopants. The method comprises the steps of growing a buffer layer on a substrate at a first growth temperature, growing a GaN layer on the buffer layer at a second growth temperature higher than the first growth temperature for a first growth time (a first growth step), growing the GaN layer at increasing temperatures from the second growth temperature to a third growth temperature higher than the second growth temperature for a second growth time (a second growth step), and growing the GaN layer at the third growth temperature for a third growth time (a third growth step).

Aligned multi-walled carbon nanotubes were grown on both sides of a metallic or metal-coated substrate by water vapor-assisted chemical vapor deposition. Aligned carbon nanotube films of thickness ranging from 1 μm to over 100 μm were obtained. By manipulating various operating factors—position of substrate in the reactor, amount of water vapor, amount of catalyst, reactor temperature, and growth time, the morphology and thickness of these carbon nanotube films could be adjusted.

The invention discloses a feeding method of culturing the baby hippocampus trimaculatus leach. The technical method designs a screening and converting method of the fish bait type in different growth time suitable for the baby Hippocampus Trimaculatus Leach based on the baby's ingestion and life habits. The technical method changes the conventional culture model of the baby hippocampus trimaculatus leach and can remarkably increase the growth rate and the survival rate of the baby hippocampus trimaculatus leach.

The invention discloses a variety breeding and early-season high-yield cultivation technology for actinidia arguta. The variety breeding and early-season high-yield cultivation technology includes procedures of 1 variety selection, 2 seedling propagation, 3 field planting, 4 underground management, 5 pest control and 6 pruning. Seedling propagation carried out in a step 2 includes collecting and storing cuttings and performing root cutting on the cuttings in sunlight greenhouses, particularly, root cutting is performed on the cuttings in the nutrient pots, and greenwood cutting is performed on the cuttings. Compared with the prior art, the variety breeding and early-season high-yield cultivation technology has the advantages that seedlings are raised in the sunlight greenhouses by means of root cutting, so that the seedling growth time can be prolonged, the seedlings are healthy and are high in growth potential after being planted, and a foundation is laid for early and high yields; frame surfaces are replaced by small canopy frames, and accordingly operation and management can be facilitated.

The invention provides a transplanting method of a large-volume camphor tree. The transplanting method comprises the steps of: an operation at the position before camphor tree transplanting and an operation at the position after camphor tree transplanting, wherein the two positions are spliced by a camphor tree transportation step; the operation at the before camphor tree transplanting comprises the following sequential steps of preparing before construction, excavating mud balls and binding mud balls; and the operation at the position after camphor tree transplanting comprises the following sequential steps of digging planting holes, arranging an irrigation system and a dewatering system, planting and maintaining. By adopting the transplanting method of the large-volume camphor tree provided by the invention, the off-season transplanting survival rate of large-size camphor tree is improved, the reversion growth time of the transplanted camphor tree is shortened, the greening effect of the camphor tree after transplanting is ensured, the cost is saved and the transplanting construction benefit of the camphor tree is improved.

The invention discloses a multi-quantum-well structure used in photoelectron device, wherein the thickness of a potential well layer near N type semiconductor layer is larger than that of the potential well near P type semiconductor layer. The invention also discloses a manufacturing method of the multi-quantum-well structure, including that Ga barrier layer N and InxGa potential well layer N are alternately grown on the N type semiconductor layer of the photoelectron device by adopting MOCVD technology, wherein the growth time of the InxGa1-x potential well layer N near the N type semiconductor layer is 50-200s, and the growth time of the InxGa1-x potential well layer N near the P type semiconductor layer is 0.5-1 time that of the potential well layer near the N type semiconductor layer. The multi-quantum-well structure of the invention can improve the internal quantum efficiency of the photoelectron device, improves reverse voltage and antistatic property, and reduces halfwidth of the luminous spectrum peak to improve luminous purity; and the structure can reduce dark current to improve the sensitivity of a detector when being applied in the detector.

The invention provides a method for epitaxial growth of nitride films, comprising the steps as follows: firstly, the temperature of a substrate is directly increased to the growth temperature of the nitride film; subsequently, during the early growth period, the input switch of ammonia gas (NH3) and III-cluster material is controlled by the computer program of growth equipment so that the ammonia gas (NH3) and III-cluster material are alternatively put into to a growth reaction chamber in pulse; during the process, a nucleation layer is formed on the surface of the substrate under the given duration, interval and pulse period; subsequently, the nitride film and device structure thereof with high crystal quality can grow on the nucleation layer. The method can simplify preparation process, reduces growth time, thereby reducing the growth cost and improving the growth efficiency. The method is beneficial for high crystal quality and for the growth of nitride film materials with low dislocation density.

The invention discloses a leech industrial soilless three-dimensional high-efficiency culture method. The leech industrial soilless three-dimensional high-efficiency culture method comprises the following steps of: a, building an industrial culture pond; b, cocoon production; c, incubation; d, larva culture; e, larva stocking; f, culture management; and g, finished product leech harvest, wherein multi-edge multi-angle three-dimensional environments are created in the culture pond; artificial soilless three-dimensional caves are provided; and a first-level platform, a second-level platform, a third-level platform and a deepwater region are provided. By the leech industrial soilless three-dimensional high-efficiency culture method, cost can be saved; the leech is wide-body golden-thread leech and the survival rate of the larvae reaches over 95 percent; the growth time is about 90 days from the larvae to the finished products and the growth time in the natural world is 180 days; density is increased due to three-dimensional culture; and the finished products can be cleaned and harvested conveniently.

The invention relates to a large monocrystal graphene and a preparation method thereof. The preparation method comprises the following steps: 1) in a non-reducing gas atmosphere, carrying out annealing treatment on a copper base; 2) while introducing reducing gas into a reactor, carrying out annealing reduction on the copper base subjected to annealing treatment in the step 1); and 3) depositing graphene on the surface opposite the substrate on the gap formed by the two copper bases subjected to annealing reduction by a chemical vapor deposition process, thereby obtaining the isolated large monocrystal graphene. The preparation method can also further comprise the following steps: by using polymethyl methacrylate (PMMA) or polyethylene terephthalate (PET) as a medium, transferring the large monocrystal graphene onto the target base, and adjusting the growth time and gas flow rate in the graphene growth process to quickly prepare the isolated large monocrystal graphene sample. The method does not need longer preparation time or any expensive monocrystal base.

The invention relates to a mulberry foliar fertilizer as well as a preparation method thereof, which belong to the organic fertilizer field. The foliar fertilizer is mainly prepared by nutritive elements required by mulberry, amino acid, humic acids and a plant growth regulator. The results of experiments in mulberry field show that the usage of the mulberry foliar fertilizer can increase the mulberry leaf output by 30 percent, extend the mulberry growth time in autumn, and be favorable for improving the quality of silkworm cocoons, and the production of silkworm cocoons is increased by about 20 percent.

The invention discloses an Ustilago esculenta haploid strain UET1 and a use thereof and belongs to the technical field of biology. The Ustilago esculenta haploid strain UET1 has a preservation number of CGMCC No. 11843. Zizania aquatica artificial breeding needs common invasion of two sexual compatible haploid strains. The strain can be used as a zizania aquatica artificial breeding mother strain, through screening, a sexual compatible haploid strain is obtained and artificial zizania aquatica breeding is realized through artificial inoculation. The haploid strain UEMT2 can be used for gene engineering reconstruction and provides an implementation base material for zizania aquatica improvement such as zizania aquatica environmental adaptability and zizania aquatica growth time control in zizania aquatica breeding.

The invention relates to the technical field of epitaxial growth of semiconductor materials, and discloses a high pressure resistant nitride semiconductor epitaxial structure and a growing method thereof. The high pressure resistant nitride semiconductor epitaxial structure sequentially includes a substrate, a nucleating layer, an impurity filter layer, a complex nitride epitaxial buffer layer, an electron barrier layer, a non-doped gallium nitride channel layer and a heterojunction barrier layer from the bottom up; the complex nitride epitaxial buffer layer includes a high-resistance aluminum-enriched nitride stress buffer layer and a high-resistance top gallium nitride buffer layer positioned on the high-resistance aluminum-enriched nitride stress buffer layer. The high pressure resistant nitride semiconductor epitaxial structure can improve the stress status in the nitride semiconductor epitaxial layer on the silicon substrate and reduce warping of the epitaxial wafer under the premise of slightly influencing the performance of a heterojunction two-dimensional electron gas channel at the upper layer. The leak current characteristic of the nitride semiconductor epitaxial layer on the silicon substrate is greatly reduced, the unit thickness compression capacity of the nitride semiconductor epitaxial layer on the silicon substrate is improved, and thereby the growth time of epitaxy can be reduced, and the production cost is lowered.

Disclosed is a method of growing thin and smooth germanium (Ge) on a strained or relaxed silicon (Si) layer comprising the steps of: (a) treating surface of the strained or relaxed Si layer to gaseous precursors of both Si (e.g., silane) and Ge (e.g., germane) for a predetermined short time duration Δt, where 1≦Δt≦30 seconds; and (b) depositing a thin Ge film on top of said treated Si layer, wherein said treatment step of (a) reduces growth time and surface roughness of the thin Ge film (e.g., sub-5 nm or sub-20 nm thick) deposited on the Si layer. The treatment step (a) can be conducted at a steady predetermined temperature T, where 450≦T≦900° C. The predetermined short time duration Δt can be chosen such that less than 10 A of SiGe is deposited.

The invention discloses a cyanobacterial bloom predicting method based on a non-linear kinetic time-series model, which belongs to the water environment predicting field. The method comprises the following steps: using the blue algae growth rate as a time-varying parameter; creating a non-linear kinetic time-series model for the cyanobacteria growth with double nutrient salt cycling; using the combination of the numerical algorithm and the intelligent evolutionary algorithm, optimizing the constant parameters in the non-linear kinetic time-series model for the cyanobacteria growth; through setting the multivariate time-series model to realize the prediction of the time-varying parameter and the cyanobacteria biomass and through using the bifurcation theory and the central manifold theory to make a nonlinear kinetic analysis of the cyanobacteria growth time-varying system, obtaining the outbreak conditions for a cyanobacteria bloom so as to make an early warning of the bloom outbreak. The method proposed by the invention not only determines the conditions for a cyanobacteria bloom outbreak, but also improves the bloom prediction accuracy, providing an effective reference for an environmental protection department and governance decisions for water environment treatment.

The invention provides an under-forest wild-imitating planting method for polygonatumkingianum. The under-forest wild-imitating planting method includes the steps of seedling selection, pregermination in sand bed and under-forest planting, wherein the under-forest planting includes the steps of soil preparation, furrowing, field planting, fertilization, disease elimination and weeding. The method has the advantages that seedling emergence and growth situations during planting are good, growth time is shortened as compared with that of wild growth, less cultivated land is used as compared with that in field planting, pesticide and chemical fertilizer residues are reduced, product quality is improved, forest land output benefits are increased, and the method is suitable for not only production application of individual peasant households but also large-scale corporatized operation. The method has the specific advantages of less cultivated land use, benefit to grain safety, capability of widening forestry income range, benefit to forest resource protection, reduction of production cost of a genuine medicinal material, namely the polygonatumkingianum, and improvement on product quantity.

The invention provides a new technology of inducing clustered shoots from parispolyphylla rhizome for rapid vegetative propagation. The new technology comprises: selecting a parispolyphylla rhizome to keep in reserve, drying in air for 3-7 days, making incisions on the back of the rhizome by using a cutter, immersing the incisions in an ABT rooting powder solution with a concentration of 10-30 ppm fro 2-10 h, disinfecting the incisions by plant ash, coating the parispolyphylla rhizome with a mixture of plant ash and clean river sands, transplanting and cultivating the parispolyphylla rhizome according to strains, coating fine soil with thickness of 5 mm on the parispolyphylla rhizome. After planting the rhizome, cluster buds germinate from stock plants and grow for about one year, then each parispolyphylla stock plant generates about more than twenty plantlets each of which possesses buds, small rhizome and a fine root, and the plantlets are taken as parispolyphylla seedlings for transplanting, and after 3-4 years, parispolyphylla finished products are obtained. The new technology has high propagation coefficient, and the produced parispolyphylla plantlets have high survival rate and fast growth speed. Compared with parispolyphylla seed propagation, the new technology helps to shorten more than one third of growth time of a finished product; and compared with a parispolyphylla rhizome fragment propagation method, the new technology helps to improve propagation coefficient by 4-6 times, and helps to solve the raw material gap facing medicinal materials and industrial production.

The invention provides a cultivation method for promoting stable yield of dried sweet potatoes in northern sweet potato area plains to exceed one ton per mu. The cultivation method comprises the steps of carefully selecting the variety, selecting land to form a ridge, performing formulated fertilization, selecting strong seedlings, performing film mulching and early planting, appropriately increasing the density, performing drip irrigation under a mulch, strictly preventing diseases and pests, chemically controlling the excessive vegetative growth and performing mechanical harvesting. According to the cultivation method, through early planting and close planting and by the matching of other advanced planting technologies, the growth time of the sweet potatoes is prolonged, the content of starch in the sweet potatoes and the sweet potato dry matter accumulation amount in unit area land are remarkably improved, and the per mu yield of the dried sweet potatoes can exceed one ton. The comprehensive degree of the technology is improved, the fusion of the improved variety and the good method and the combination of an agricultural machine and the agricultural technology are performed, the matching of engineering measures and cultivation measures is achieved, the level of the cultivation technology is fully improved, the working efficiency is improved, and the production cost is reduced. The standard degree of the technology is improved, the technology details and parameters are further clearer through the quantitative data indexes, and the basis is laid for the standard forming and popularization of the planting technology.

The invention relates to an alterant of an iron-rich phase in secondary aluminum and an alteration method. The alterant is composed of a [Mn] agent and a [B] agent. The alteration method includes the steps that part of secondary aluminum is heated to form a melt, then the [Mn] agent is added, the remaining secondary aluminum is added after the [Mn] agent melts, the [B] agent is added, refining is carried out after the [B] agent melts, pouring is carried out after standing is carried out for a period of time, and the secondary aluminum obtained after alteration treatment is obtained. According to the alterant and the alteration method, the Fe element in the iron-rich phase can be replaced through the [Mn] agent, the advantage growth orientation of the iron-rich phase is changed, and therefore a needle-like beta-Fe phase is eliminated; meanwhile, the forming temperature of the iron-rich phase can be reduced through B in the [B] agent, the growth time of a primary iron-rich phase is shortened, the growth space of the primary iron-rich phase is reduced, the B can also serve as a surface-active element, and is absorbed to the surface of the iron-rich phase in the initial phase of formation of the iron-rich phase, and growth of the iron-rich phase is restrained, so that through the combined action of the [Mn] agent and the [B] agent, existence of the needle-like iron-rich phase and the primary iron-rich phase can be completely eliminated, the uniform Chinese character type iron-rich phase is obtained; and in addition, the adding amount of the Mn can be greatly reduced, and the mechanical performance and the machining performance of the secondary aluminum can be greatly improved.

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core / shell and core / multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

The invention provides a method for preparing graphene. The method comprises the following steps of: (1) pretreating a substrate with catalysis at high temperature; (2) slowly cooling the substrate obtained from step (1); and (3) then introducing an organic carbon source into a reaction system to obtain graphene, wherein the reaction conditions of the reaction system are as follows: the temperature is 220-480 DEG C, the hydrogen flow is 20-100sccm, the growth time lasts 10-60min, and the reaction pressure is 1-50Torr. The invention relates to a method for preparing graphene at high temperature by utilizing a chemical vapor deposition method, and the growth of high-quality graphene can be successfully realized at low temperature by adopting solid-state or liquid-state organic matters as an effective carbon source. The improved method is simple, convenient and effective to operate, compared with the traditional graphene growing technology carried out at 1000 DEG C, the method has the advantage that the cost for industrially producing graphene can be greatly lowered, and the step for large-scale industrialized production of high-quality graphene can be promoted.

The invention relates to the field of manufacturing of epitaxial wafers, and provides a GaN-based LED epitaxial wafer with high external quantum efficiency and a manufacturing method thereof. The method includes the steps that a GaN nuclearing layer, an involuntary doping U-GaN layer, an N-type doping GaN layer, an active area MQW layer, a quantum well protection layer, an electron blocking layer, a P-type GaN layer and a contact layer sequentially grow on a sapphire substrate; the electron blocking layer is an AlN layer or a superlattice layer formed by AlN and AlyInzGal-y-zN, y is larger than or equal to 0 and smaller than or equal to 1, z is larger than or equal to 0 and smaller than or equal to 1, the result of y plus z is larger than or equal to 0 and smaller than or equal to 1, growth temperature is 700-1200 DEG C and the thickness of the electron blocking layer is 3-100 nm. According to the GaN-based LED epitaxial wafer and the manufacturing method thereof, the thin AlN layer with high potential barriers can effectively performs the function of the electron blocking layer, the thickness of a whole P-layer structure can be reduced, the external quantum efficiency of an LED device can be obviously improved, growth time can be shortened, and production cost is reduced.

The invention discloses a fresh broad bean vernalizing method, which comprises the following steps: soaking seeds, accelerating buds, vernalizing buds, exercising seedlings, sowing, paving a film, managing in fields, and the like. According to the fresh broad bean vernalizing method disclosed by the invention, the fresh broad bean vernalizing principle is utilized to artificially carry out proper low-temperature vernalization on the seed in the budding period for a certain time, and the growth time is shortened by utilizing conditions of a greenhouse facility to make the blossoming and fruiting ahead of time so as to enhance the gain. Meanwhile, the fresh broad bean vernalizing method also can efficiently prevent harm of insects, such as bruchus rufimanus and the like, and reduce the application amount of the pesticide. The harvesting time of the fresh bean produced by using the fresh broad bean vernalizing method is more than 40 days earlier than the harvesting time of the fresh bean cultured in the open, the output of the bean is enhanced by more than 50%, and the production value is tripled.