GaN-based LED epitaxial wafer with high external quantum efficiency and manufacturing method thereof

Abstract

The invention relates to the field of manufacturing of epitaxial wafers, and provides a GaN-based LED epitaxial wafer with high external quantum efficiency and a manufacturing method thereof. The method includes the steps that a GaN nuclearing layer, an involuntary doping U-GaN layer, an N-type doping GaN layer, an active area MQW layer, a quantum well protection layer, an electron blocking layer, a P-type GaN layer and a contact layer sequentially grow on a sapphire substrate; the electron blocking layer is an AlN layer or a superlattice layer formed by AlN and AlyInzGal-y-zN, y is larger than or equal to 0 and smaller than or equal to 1, z is larger than or equal to 0 and smaller than or equal to 1, the result of y plus z is larger than or equal to 0 and smaller than or equal to 1, growth temperature is 700-1200 DEG C and the thickness of the electron blocking layer is 3-100 nm. According to the GaN-based LED epitaxial wafer and the manufacturing method thereof, the thin AlN layer with high potential barriers can effectively performs the function of the electron blocking layer, the thickness of a whole P-layer structure can be reduced, the external quantum efficiency of an LED device can be obviously improved, growth time can be shortened, and production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of epitaxial wafer manufacturing, and in particular relates to a GaN-based LED epitaxial wafer with high external quantum efficiency and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode)) has the advantages of small size, ruggedness, strong controllability of light-emitting band, high light efficiency, low heat loss, low light decay, energy saving, environmental protection, etc., and has been widely used in backlight, traffic indication Lights, car lights, street lights, toy decoration and other fields. The requirements for LEDs in application fields are getting higher and higher. Improving quality and reducing production costs are the goals that the LED industry has been pursuing. [0003] In the existing GaN-based LED epitaxial wafers, the electron blocking layer is grown by AlGaN, AlInGaN, etc., and the thickness of the entire P layer structure...

AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the object of the present invention is to provide a GaN-based LED epitaxial wafer with high external quantum efficiency and its manufacturing method, aiming to solve the technical problem of low external quantum efficiency of the existing GaN-based LED epitaxial wafer

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