30results about How to "High Gain Bandwidth Product" patented technology

An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

A high speed transimpedance amplifier includes an inverting unit, at least one gain module, and a feedback resistor. The inverting unit has an input terminal coupled to a photodiode for receiving an input voltage, and an output terminal for outputting a first voltage. The at least one gain module has an input terminal coupled to the output terminal of the inverting unit for receiving the first voltage, and an output terminal for outputting an output voltage. Each gain module includes a first gain inverting unit and a second gain inverting unit which are coupled to each other. The first gain inverting unit and the second gain inverting unit dominate bandwidth of the high speed transimpedance amplifier. The feedback resistor is coupled to the input terminal of the inverting unit and the output terminal of the at least one gain module for determining a transimpedance of the high speed transimpedance amplifier.

A high-frequency bandwidth amplifying circuit includes a forward channel and a backward channel. An input terminal of the forward channel and an external forward input terminal are connected; an output terminal of the forward channel and a forward output port are connected. An input terminal of the backward channel and an external backward input terminal are connected; an output terminal of the backward channel and a backward output port are connected. The high-frequency bandwidth amplifying circuit further includes a feedback network. The forward channel includes a first operational amplifier and a second operational amplifier. An input terminal of the first operational amplifier is connected to the external forward input terminal; an output terminal of the first operational amplifier is connected to an input terminal of the second operational amplifier; and an output terminal of the second operational amplifier is connected to the forward output port.

The invention belongs to the fields of optical fiber communication systems and optical interconnection, and aims to achieve the advantages of small size, low cost, high reliability, rich functions and the like of monolithic integration. The invention provides a photoelectric detector compatible with a standard SiGe bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) process, and a high-speed and high-sensitivity monolithic integrated optical receiver integrated with the detector. To meet the technical requirements, the standard SiGe BiCMOS process-based optoelectronic integrated receiver comprises two photoelectric detectors with completely symmetrical structures, a trans-impedence amplifier with a full differential structure, a group of sequentially cascaded full differential limiting amplifier and an output buffer stage which is used for converting differential voltage signals output by the limiting amplifier into single-end output voltage signals and providing driving force. The optoelectronic integrated receiver is mainly applied to design and manufacture of the optical fiber communication systems.

The invention discloses an ultra-low power consumption broadband low-noise amplifier, which comprises an input-stage amplifier, an intermediate-stage matching network and an output-stage amplifier sequentially connected; the input-stage amplifier is composed of an input matching network and a transconductance enhancement structure; the The output stage amplifier is composed of capacitor neutralization structure and output matching network. Through the above method, the present invention can improve the efficiency of current use, and greatly reduce the power consumption of the amplifier while ensuring performance such as gain and noise. On the other hand, it optimizes the matching between amplifier stages, increases bandwidth, and reduces in-band fluctuations.

The invention belongs to the technical field of integrated circuits, and in particular relates to a current sampling circuit. Including sampling and timing control module, uncompensated error amplifier EA module and output stage, the input terminal of sampling and timing control module is connected with inductor current I L , its two output terminals are respectively connected to the non-inverting input terminal and inverting input terminal of the error amplifier EA module without compensation; the input terminal of the output stage is connected to the output terminal of the error amplifier EA module without compensation, and its output terminal outputs the sampling current Isense. In the present invention, the error amplifier EA module without compensation does not need a compensation circuit while ensuring sufficient gain, so that the gain-bandwidth product GBW of the error amplifier EA can be increased to more than 10M; through the timing control network of the sampling and timing control module, the switching signal is suppressed. Glitch, thereby reducing the influence of the PMW signal and the LX point signal on the input terminal of the uncompensated error amplifier EA and the final sampling output current.

The present disclosure provides a high-speed and high-gain avalanche photodetector and its preparation method, the chip of which includes three steps arranged from top to bottom; wherein: the first step includes P electrodes arranged in sequence from top to bottom, The first ohmic contact layer, the first absorption layer, and the upper part of the second absorption layer; the second step, including the lower part of the second absorption layer, the transition layer, the first charge layer, the multiplication layer, and the second charge layer arranged in sequence from top to bottom layer, the transition layer and the upper part of the second ohmic contact layer; the third step, including the lower part of the second ohmic contact layer and the insulating substrate arranged in sequence from top to bottom; the horizontal projected area of ​​the three steps increases in turn. The chip multiplication layer is made of ultra-thin InAlAs material. The three-level step chip is upside-down bonded on the substrate.

The invention provides a trans-impedance amplifier. The amplifier comprises an equivalent secondary amplification module, an anti-phase amplification unit and a feedback resistor; the input end of the equivalent secondary amplification module is coupled to a photodiode and used for inputting a voltage signal, and the output end of the equivalent secondary amplification module outputs a first voltage signal subjected to secondary amplification; the anti-phase amplification unit is coupled to the output end of the equivalent secondary amplification module and used for connecting the first voltage signal and outputting an amplified voltage signal subjected to anti-phase amplification, the anti-phase amplification unit comprises a third N-shaped transistor and a fourth N-shaped transistor coupled with the third N-shaped transistor, the third N-shaped transistor is used for receiving a third direct voltage signal, the fourth N-shaped transistor is used for receiving the first voltage signal output through the equivalent secondary amplification module, and the common connection end of the third N-shaped transistor and the fourth N-shaped transistor outputs an amplified voltage signal; the feedback resistor is couple with the input end of the equivalent secondary amplification module and the output end of the anti-phase amplification unit. The trans-impedance amplifier can not be constrained by original conditions, and can increase the resistance, reduce the input noise, and improve the sensitivity.

A high-frequency bandwidth amplifier circuit comprises: a push-pull amplifier, a feedback resistor, a first active inductor, and a second active inductor. An input terminal of the push-pull amplifier is connected with an external input terminal. An output terminal of the push-pull amplifier is connected with an output port. A first end of the feedback resistor is connected with the external input terminal. A second end of the feedback resistor is connected with the output port. A first end of the first active inductor is connected with an external power source. A second end of the first active inductor is connected with the output port. A first end of the second active inductor is grounded. A second end of the second active inductor is connected with the output port.

The invention relates to large-scale integrated circuits, and aims to improve direct current gain of an amplifier, simultaneously increase gain bandwidth product of the amplifier and finally realize increase of direct current gain and bandwidth of the amplifier under the condition of same chip area. Therefore, the technical scheme of the invention is a gain-boosted operational amplifier applicable to a sigma-delta modulator. The gain-boosted operational amplifier applicable to the sigma-delta modulator is composed of a Recycling folded cascade amplification stage, an output resistance boosting loop, a transconductance boosting loop and a common-mode feedback stage; differential mode signals Vin- and Vin+ are input through the Recycling folded cascade amplification stage, then, the signals are subjected to the cross positive feedback effect of the output resistance boosting loop stage and the transconductance boosting loop stage and further subjected to current multiplication of a cascade current mirror, and finally, the signals are output to output ends Vout- and Vout+. The gain-boosted operational amplifier applicable to the sigma-delta modulator is mainly applied to design and manufacturing of the large-scale integrated circuits.