30results about How to "High Gain Bandwidth Product" patented technology

An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

The embodiment of the invention discloses a low dropout linear regulator, a method for improving the stability of the low dropout linear regulator and a phase-locked loop. The low dropout linear regulator comprises a reference voltage source, an error amplifier, an adjustment circuit, a load, a first compensating circuit and a second compensating circuit. The first compensating circuit is coupled with the adjustment circuit and used for adjusting a dominant pole and a secondary dominant pole of the low dropout linear regulator to adjust the phase margin. The second compensating circuit is used for adjusting the dominant pole of the low dropout linear regulator on the basis that the dominant pole and the secondary dominant pole of the low dropout linear regulator are adjusted by the first compensating circuit, further increasing the secondary dominant pole to adjust the phase margin and adjusting the gain bandwidth product of the low dropout linear regulator. By means of the low dropout linear regulator, the value of the gain bandwidth product and the dominant pole can be remarkably reduced, the secondary dominant pole can be increased, and therefore the error amplifier has the better noise performance.

The invention provides an avalanche photodiode based on AlInAsSb body material as the multiplication region, comprising: a substrate; a buffer layer epitaxially on the substrate; an N-type ohmic contact layer epitaxially on the buffer layer and having a cross section of "" Convex" shape, its lower half is consistent with the shape of the substrate, and its upper half is cylindrical; the avalanche multiplication layer is epitaxial on the upper surface of the upper half of the N-type ohmic contact layer, composed of AlxIn1‑xAsySb1‑y Bulk material preparation, the doping concentration is less than 1016cm-3, the value range of x is: 0≤x≤1, the value range of y is: 0.08≤y≤1; the P-type charge layer is epitaxial on the avalanche multiplication layer ; The light absorbing layer is epitaxial on the P-type charge layer; and the P-type ohmic contact layer is epitaxially on the light absorbing layer. The avalanche photodiode has the advantages of low noise and high gain-bandwidth product, and at the same time effectively reduces the dark current, which not only meets the requirement of high sensitivity of the photodetector, but also realizes the design of energy band engineering and broadens its application range.

The invention belongs to the fields of optical fiber communication systems and optical interconnection, and aims to achieve the advantages of small size, low cost, high reliability, rich functions and the like of monolithic integration. The invention provides a photoelectric detector compatible with a standard SiGe bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) process, and a high-speed and high-sensitivity monolithic integrated optical receiver integrated with the detector. To meet the technical requirements, the standard SiGe BiCMOS process-based optoelectronic integrated receiver comprises two photoelectric detectors with completely symmetrical structures, a trans-impedence amplifier with a full differential structure, a group of sequentially cascaded full differential limiting amplifier and an output buffer stage which is used for converting differential voltage signals output by the limiting amplifier into single-end output voltage signals and providing driving force. The optoelectronic integrated receiver is mainly applied to design and manufacture of the optical fiber communication systems.

The invention belongs to the technical field of integrated circuits and particularly relates to a current sampling circuit. The current sampling circuit comprises a sampling and time sequence control module, an uncompensated error amplifier EA module and an output stage, wherein the input end of the sampling and time sequence control module is connected with inductive current IL, two output ends of the sampling and time sequence control module are connected with the in-phase input end and the inverted input end of the uncompensated error amplifier EA module respectively, the input end of the output stage is connected with the output end of the uncompensated error amplifier EA module, and the output end of the output stage outputs sampling current Isense. The current sampling circuit has the advantages that the uncompensated error amplifier EA module guarantees sufficient gain and requires no compensating circuit, so that a GBW (gain bandwidth product) of an error amplifier EA is increased to 10 M and above; a time sequence control network of the sampling and time sequence control module restrains burr generated by switching signals, so that influences of PMW signals and LX dot signals on the input end of the uncompensated error amplifier EA and final sampling output current are lowered.

The embodiment of the invention discloses a lateral structure avalanche photodetector and a preparation method thereof. The lateral structure avalanche photodetector comprises a substrate, a first epitaxial growth layer and a second epitaxial growth layer, wherein the substrate comprises a first semiconductor material region; an avalanche region is formed in the first semiconductor material region; the first epitaxial growth layer is formed as an absorption region; the upper surface of the first epitaxial growth layer is a light absorption surface and protrudes out of the upper surface of thefirst semiconductor material region; the lower surface of the first epitaxial growth layer is lower than the upper surface of the first semiconductor material region; the second epitaxial growth layerat least comprises a first part and a second part which are located on the two sides of the first epitaxial growth layer in the first direction, the first part and the second part cover two side walls, which protrude out of the first semiconductor material region, of the first epitaxial growth layer respectively, and the first part and the second part form at least one part of a first charge region and a second charge region respectively; and the first charge region, the absorption region, the second charge region, and the avalanche region at least partially overlap in the first direction.

The invention discloses a bandwidth extension circuit of a cascode trans-impedance amplifier based on CMOS (complementary metal oxide transistor) technology. The bandwidth extension circuit is of completely bilaterally symmetric structure; each of the left and right parts of the bandwidth extension circuit includes a traditional primary cathode-input amplifier, a novel cascode auxiliary amplifierand a terminal source follower; the novel cascode structure is used herein to assist the amplifiers in shielding Miller effect; the concurrent PMOS (P-channel metal oxide semiconductor) structure provides greater transconductance for the cathode-input NMOS (N-channel metal oxide semiconductor); stray capacitance is partially shielded with a Pi-shaped matching network shielding portion; the terminal source follower is added to isolate stray post-capacitance, and total bandwidth of the circuit herein is increased; the circuit herein helps effectively reduce input impedance via RGC structure, andinput capacitance that is mainly of photoelectric detector junction capacitance is better isolated; the circuit herein gains adjustment and optimization for component parameters; differential structure is utilized so that working bandwidth of the circuit herein is greatly widened.

The invention relates to large-scale integrated circuits, and aims to boost input transconductance and output resistance of an amplifier, further improve direct current gain of the amplifier and finally realize boost of direct current gain and gain bandwidth product of the amplifier under the condition of same chip area. Therefore, the technical scheme of the invention is a gain-boosted operational amplifier applicable to a TFT-LCD drive circuit. The gain-boosted operational amplifier applicable to the TFT-LCD drive circuit is composed of a Recycling folded cascade amplification stage, an output resistance boosting loop, a transconductance boosting loop and a high swing output stage; differential mode signals Vin- and Vin+ are input through the Recycling folded cascade amplification stage, then, the signals are subjected to the cross positive feedback effect of the output resistance boosting loop stage and the transconductance boosting loop stage and further subjected to current multiplication of a cascade current mirror, and finally, the signals are output to an output end through the high swing output stage. The gain-boosted operational amplifier applicable to the TFT-LCD drive circuit is mainly applied to the large-scale integrated circuits.

The invention belongs to the technical field of integrated circuits, and particularly relates to a broadband variable gain amplifier with high linearity. The variable gain amplifier comprises a first-stage fixed gain amplifier, wherein the gain of the first-stage fixed gain amplifier is fixed to be 21 dB; three switches, wherein two switches are connected with the first-stage fixed gain amplifierin parallel, the third switch is connected between the first-stage fixed gain amplifier and the power supply, the two switches which are connected in parallel enable the first-stage fixed gain amplifier to be short-circuited in a low-gain mode and to be disconnected in a high-gain mode, and the third switch is disconnected in the low-gain mode and to be closed in the high-gain mode; and the inputend of the second-stage variable gain amplifier is connected with an input signal of the whole link in a low-gain mode and is connected with the output of the first-stage fixed gain amplifier in a high-gain mode, and the gain change range of the second-stage variable gain amplifier is changed from 0 dB to 21 dB. The gain amplifier can be used for the sampling front end of a high-precision analog-to-digital converter, has variable gain, and realizes high linearity while keeping wide bandwidth.

The invention disclose a radio-frequency Cascode structure power amplifier with improved linearity and power added efficiency, comprising a Cascode structure comprising a common-emitter input transistor and a common-base output transistor, an input matching network connected from a signal input port of the power amplifier and a base of the input transistor, and an output matching network connected from a collector of the output transistor to the signal output port of the power amplifier. The base of the output transistor is connected with an RLC series-parallel resonant network capable of improving the gain of a baseband signal and restraining input of a secondary harmonic signal. The radio-frequency Cascode structure power amplifier obviously improves the linearity and power added efficiency of the CASCODE structure power amplifier without increasing the static power consumption of the power amplifier by means of increasing the baseband gain and restraining the harmonic signal by the RLC series-parallel resonant network; and the radio-frequency Cascode structure power amplifier effectively increases the gain bandwidth product of the Cascode structure wideband power amplifier.

The invention discloses a graphene distributed amplifier. The amplifier comprises an input circuit, a plurality of cascaded amplification unit circuits, an output circuit, a gate bias circuit and a drain bias circuit which are arranged on the same substrate; the input circuit and the drain bias circuit are respectively connected with a grid electrode and a drain electrode of the first-stage amplification unit circuit; the drain electrode and the grid electrode of the last-stage amplification unit circuit are respectively connected with the output circuit and the grid electrode biasing circuit;a signal enters the amplification unit circuit through the input circuit, the grid bias circuit adjusts the input signal, the amplification unit circuit amplifies the signal by adopting a cascode structure, the output circuit outputs the cascaded and amplified signal, and the drain bias circuit adjusts the output signal.

A high speed transimpedance amplifier includes an inverting unit, at least one gain module, and a feedback resistor. The inverting unit has an input terminal coupled to a photodiode for receiving an input voltage, and an output terminal for outputting a first voltage. The at least one gain module has an input terminal coupled to the output terminal of the inverting unit for receiving the first voltage, and an output terminal for outputting an output voltage. Each gain module includes a first gain inverting unit and a second gain inverting unit which are coupled to each other. The first gain inverting unit and the second gain inverting unit dominate bandwidth of the high speed transimpedance amplifier. The feedback resistor is coupled to the input terminal of the inverting unit and the output terminal of the at least one gain module for determining a transimpedance of the high speed transimpedance amplifier.

The invention relates to large-scale integrated circuits, and aims to improve direct current gain of an amplifier, simultaneously increase gain bandwidth product of the amplifier and finally realize increase of direct current gain and bandwidth of the amplifier under the condition of same chip area. Therefore, the technical scheme of the invention is a gain-boosted operational amplifier applicable to a sigma-delta modulator. The gain-boosted operational amplifier applicable to the sigma-delta modulator is composed of a Recycling folded cascade amplification stage, an output resistance boosting loop, a transconductance boosting loop and a common-mode feedback stage; differential mode signals Vin- and Vin+ are input through the Recycling folded cascade amplification stage, then, the signals are subjected to the cross positive feedback effect of the output resistance boosting loop stage and the transconductance boosting loop stage and further subjected to current multiplication of a cascade current mirror, and finally, the signals are output to output ends Vout- and Vout+. The gain-boosted operational amplifier applicable to the sigma-delta modulator is mainly applied to design and manufacturing of the large-scale integrated circuits.

The invention discloses an ultra-low power consumption broadband low-noise amplifier, which comprises an input-stage amplifier, an intermediate-stage matching network and an output-stage amplifier which are connected in sequence, wherein the input stage amplifier is composed of an input matching network and a transconductance enhancement structure; and the output stage amplifier is composed of a capacitance neutralization structure and an output matching network. By means of the mode, the current use efficiency can be improved, the power consumption of the amplifier is greatly reduced under the condition that gain, noise and other performance are guaranteed, and on the other hand, inter-stage matching of the amplifier is optimized, the bandwidth is increased, and in-band fluctuation is reduced.

The invention discloses a high-sensitivity broadband optical receiver front-end circuit. The optical receiver front-end circuit comprises a transimpedance amplifier, a limiting amplifier, a DC offset cancellation circuit and an output buffer stage that are sequentially and electrically connected, wherein a bootstrap circuit is additionally arranged at the input end of the transimpedance amplifier to reduce the influence of the detector capacitance; the transimpedance amplifier is provided with a noise elimination circuit to reduce noises caused by the change of power supply current and improve the sensitivity; the limiting amplifier is a set of three-stage cascades, has negative Miller capacitor compensation, and is used for amplifying a voltage signal to the voltage level required by a digital processing unit; the DC offset cancellation circuit adopts a differential active Miller capacitor circuit to eliminate the effects of DC offsets; and the output buffer stage adopts an Ft frequency multiplier structure. According to the high-sensitivity broadband optical receiver front-end circuit disclosed by the invention, the limitation of an input capacitor on a working band of an RGC input stage can be counteracted by using the bootstrap circuit, the noises of the power supply current can be reduced by using the noise elimination circuit, and thus the sensitivity of the circuit can be improved.

The invention discloses a bandwidth product trans-impedance amplifier and a current-voltage conversion method, relates to the technical field of weak current signal detection, and solves the problem that in order to increase the value of gm, an existing trans-impedance amplifier inevitably causes increase of an input-stage bias current and increase of power consumption. The bandwidth product trans-impedance amplifier comprises a first-stage amplification circuit, a second-stage amplification circuit and an output circuit. The first-stage amplification circuit is used for amplifying and converting an input current under the action of negative feedback input impedance to obtain first output voltage. The second-stage amplifying circuit is electrically connected with the first-stage amplifyingcircuit. The second-stage amplification circuit is used for carrying out gain amplification on the first output voltage to obtain a second output voltage. The output circuit is electrically connectedwith the second-stage amplification circuit and is used for outputting target voltage. The bandwidth product trans-impedance amplifier provided by the invention is used for realizing high gain, highbandwidth and low input noise.

A high-frequency bandwidth amplifying circuit includes a forward channel and a backward channel. An input terminal of the forward channel and an external forward input terminal are connected; an output terminal of the forward channel and a forward output port are connected. An input terminal of the backward channel and an external backward input terminal are connected; an output terminal of the backward channel and a backward output port are connected. The high-frequency bandwidth amplifying circuit further includes a feedback network. The forward channel includes a first operational amplifier and a second operational amplifier. An input terminal of the first operational amplifier is connected to the external forward input terminal; an output terminal of the first operational amplifier is connected to an input terminal of the second operational amplifier; and an output terminal of the second operational amplifier is connected to the forward output port.

Embodiments of the present invention disclose a low dropout regulator, a method for improving stability of the low dropout regulator, and a phase-locked loop. The low dropout regulator includes: a reference voltage source, an error amplifier, a regulating circuit, a load, a first compensation circuit, and a second compensation circuit. The first compensation circuit is coupled to the regulating circuit, and is configured to regulate a dominant pole and a secondary dominant pole of the low dropout regulator, to regulate a phase margin. The second compensation circuit is configured to: regulate and decrease the dominant pole of the low dropout regulator and further increase the secondary dominant pole on the basis that the first compensation circuit has regulated the dominant pole and the secondary dominant pole of the low dropout regulator, so as to regulate the phase margin; and regulate a gain-bandwidth product of the low dropout regulator. By using the low dropout regulator according to the embodiments of the present invention, a value of the gain-bandwidth product and a size of the dominant pole can be significantly reduced, and a size of the secondary dominant pole can be increased, so that the error amplifier has better noise performance.

The invention relates to large-scale integrated circuits, and aims to boost input transconductance and output resistance of an amplifier, further improve direct current gain of the amplifier and finally realize boost of direct current gain and gain bandwidth product of the amplifier under the condition of same chip area. Therefore, the technical scheme of the invention is a gain-boosted operational amplifier applicable to a TFT-LCD drive circuit. The gain-boosted operational amplifier applicable to the TFT-LCD drive circuit is composed of a Recycling folded cascade amplification stage, an output resistance boosting loop, a transconductance boosting loop and a high swing output stage; differential mode signals Vin- and Vin+ are input through the Recycling folded cascade amplification stage, then, the signals are subjected to the cross positive feedback effect of the output resistance boosting loop stage and the transconductance boosting loop stage and further subjected to current multiplication of a cascade current mirror, and finally, the signals are output to an output end through the high swing output stage. The gain-boosted operational amplifier applicable to the TFT-LCD drive circuit is mainly applied to the large-scale integrated circuits.

The invention provides an active electrically small transmitting antenna breaking through the Bode-Fano limit, which comprises a first metal floor, and an electrically small near-field resonance parasitic antenna unit and a negative feedback amplification circuit unit which are arranged on the first metal floor and are perpendicular to each other, wherein the electrically small near-field resonance parasitic antenna unit and the negative feedback amplification circuit unit are both perpendicular to the first metal floor; and the electrically small near-field resonance parasitic antenna unit used for transmitting and radiating signals is connected with the negative feedback amplification circuit unit. According to the invention, the electrically small antenna is ingeniously embedded into an operational amplifier feedback circuit, so that the effective gain of the electrically small antenna can be remarkably increased, the passive Bode-Fano limit of the electrically small antenna is broken through, and no extra space is consumed.

The invention belongs to the fields of optical fiber communication systems and optical interconnection, and aims to achieve the advantages of small size, low cost, high reliability, rich functions and the like of monolithic integration. The invention provides a photoelectric detector compatible with a standard SiGe bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) process, and a high-speed and high-sensitivity monolithic integrated optical receiver integrated with the detector. To meet the technical requirements, the standard SiGe BiCMOS process-based optoelectronic integrated receiver comprises two photoelectric detectors with completely symmetrical structures, a trans-impedence amplifier with a full differential structure, a group of sequentially cascaded full differential limiting amplifier and an output buffer stage which is used for converting differential voltage signals output by the limiting amplifier into single-end output voltage signals and providing driving force. The optoelectronic integrated receiver is mainly applied to design and manufacture of the optical fiber communication systems.

The invention discloses an on-chip reflection type quantum amplifier with a strong isolation function. The quantum amplifier provided by the embodiment of the invention is a two-port on-chip device with a strong isolation function, a circulation function and an amplification function, is small in size and low in dissipation, and has nonreciprocity. According to the on-chip quantum amplifier with the strong isolation function, the gain bandwidth product of the amplifier is increased, the strong isolation function is achieved, meanwhile, an HEMT can be replaced, and the cost of a superconducting quantum computer and the cost of a test system of the superconducting quantum computer are greatly reduced. The on-chip quantum amplifier with the strong isolation function, provided by the embodiment of the invention, can be directly connected with the quantum chip, so that the quantum chip is protected from counteractive interference of a subsequent circuit. Based on the on-chip quantum amplifier provided by the embodiment of the invention, not only is the superconducting quantum test system using the on-chip quantum amplifier provided by the embodiment of the invention simplified, but also the size of the superconducting quantum test system is remarkably reduced, and large-scale development of superconducting quantum computers is facilitated.

The invention discloses an ultra-low power consumption broadband low-noise amplifier, which comprises an input-stage amplifier, an intermediate-stage matching network and an output-stage amplifier sequentially connected; the input-stage amplifier is composed of an input matching network and a transconductance enhancement structure; the The output stage amplifier is composed of capacitor neutralization structure and output matching network. Through the above method, the present invention can improve the efficiency of current use, and greatly reduce the power consumption of the amplifier while ensuring performance such as gain and noise. On the other hand, it optimizes the matching between amplifier stages, increases bandwidth, and reduces in-band fluctuations.

The present disclosure provides a high-speed and high-gain avalanche photodetector and its preparation method, the chip of which includes three steps arranged from top to bottom; wherein: the first step includes P electrodes arranged in sequence from top to bottom, The first ohmic contact layer, the first absorption layer, and the upper part of the second absorption layer; the second step, including the lower part of the second absorption layer, the transition layer, the first charge layer, the multiplication layer, and the second charge layer arranged in sequence from top to bottom layer, the transition layer and the upper part of the second ohmic contact layer; the third step, including the lower part of the second ohmic contact layer and the insulating substrate arranged in sequence from top to bottom; the horizontal projected area of ​​the three steps increases in turn. The chip multiplication layer is made of ultra-thin InAlAs material. The three-level step chip is upside-down bonded on the substrate.

The invention provides a trans-impedance amplifier. The amplifier comprises an equivalent secondary amplification module, an anti-phase amplification unit and a feedback resistor; the input end of the equivalent secondary amplification module is coupled to a photodiode and used for inputting a voltage signal, and the output end of the equivalent secondary amplification module outputs a first voltage signal subjected to secondary amplification; the anti-phase amplification unit is coupled to the output end of the equivalent secondary amplification module and used for connecting the first voltage signal and outputting an amplified voltage signal subjected to anti-phase amplification, the anti-phase amplification unit comprises a third N-shaped transistor and a fourth N-shaped transistor coupled with the third N-shaped transistor, the third N-shaped transistor is used for receiving a third direct voltage signal, the fourth N-shaped transistor is used for receiving the first voltage signal output through the equivalent secondary amplification module, and the common connection end of the third N-shaped transistor and the fourth N-shaped transistor outputs an amplified voltage signal; the feedback resistor is couple with the input end of the equivalent secondary amplification module and the output end of the anti-phase amplification unit. The trans-impedance amplifier can not be constrained by original conditions, and can increase the resistance, reduce the input noise, and improve the sensitivity.

A high-frequency bandwidth amplifier circuit comprises: a push-pull amplifier, a feedback resistor, a first active inductor, and a second active inductor. An input terminal of the push-pull amplifier is connected with an external input terminal. An output terminal of the push-pull amplifier is connected with an output port. A first end of the feedback resistor is connected with the external input terminal. A second end of the feedback resistor is connected with the output port. A first end of the first active inductor is connected with an external power source. A second end of the first active inductor is connected with the output port. A first end of the second active inductor is grounded. A second end of the second active inductor is connected with the output port.

A high-frequency bandwidth amplifying circuit includes a forward channel and a backward channel. An input terminal of the forward channel and an external forward input terminal are connected; an output terminal of the forward channel and a forward output port are connected. An input terminal of the backward channel and an external backward input terminal are connected; an output terminal of the backward channel and a backward output port are connected. The high-frequency bandwidth amplifying circuit further includes a feedback network. The forward channel includes a first operational amplifier and a second operational amplifier. An input terminal of the first operational amplifier is connected to the external forward input terminal; an output terminal of the first operational amplifier is connected to an input terminal of the second operational amplifier; and an output terminal of the second operational amplifier is connected to the forward output port.