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88 results about "Miller effect" patented technology

In electronics, the Miller effect accounts for the increase in the equivalent input capacitance of an inverting voltage amplifier due to amplification of the effect of capacitance between the input and output terminals. The virtually increased input capacitance due to the Miller effect is given by CM=C(1+Aᵥ) where -Aᵥ is the voltage gain of the inverting amplifier (Aᵥ positive) and C is the feedback capacitance.

Amplifier with miller-effect compensation for use in closed loop system such as low dropout voltage regulator

Circuitry including Miller-effect feedback for use as part of a closed loop system such as a low dropout voltage regulator that provides current to a load at a specified voltage close in value to the power supply voltage. Various aspects of the presently claimed invention include using, within the Miller-effect feedback loop: a buffer amplifier to reduce loading effects upon an internal high impedance circuit node, output compensation circuitry to introduce a transfer function pole for substantially canceling a transfer function zero associated with external load circuitry; and Miller-effect compensation circuitry to introduce a transfer function zero for substantially canceling a transfer function pole associated with the Miller-effect feedback.
Owner:NAT SEMICON CORP

Solid-state image sensor and camera system

A solid state image sensor includes a pixel unit and a readout unit that reads out per-pixel pixel signals from the pixel unit. The readout unit includes: a plurality of column-parallel comparators that compare a readout signal potential to a reference voltage and output a determination signal; and a plurality of counters that count the comparing time of a corresponding comparator. Each comparator includes: a first amp containing a differential amplifier that receives the reference voltage at the gate of a transistor, receives the readout signal at the gate of another transistor, and compares the reference voltage to the readout signal potential; a second amp containing an amplifier that increases the gain of the first amp's output; and a capacitor connected between the input and the output of the amplifier in the second amp in order to exhibit the Miller effect.
Owner:SONY CORP

Active surge current control circuit

The invention provides an active surge current control circuit, which consists of an electrification starting circuit, an MOSFET and a gate source voltage Vgs slope control circuit thereof, wherein a drain of the MOSFET is connected to load, and a source is connected to external input; the starting circuit consists of resistors and a Zener diodes series circuit, is spanned at two ends of the input, and sets the minimum input voltage in the working of the whole circuit and the maximum working voltage in the working of the Vgs slope control circuit; the Vgs slope control circuit consists of a resistor, a capacitor spanned between a triode c and a triode b, a diode which is reversely spanned between a triode e and the triode b, and an MOSFET protective resistor between the triode e and the triode c, controls Vgs climbing speed of the MOSFET after a power supply starts supplying power, is combined with the miller effect of Cgd in the MOSFET, and finally controls current amplitude for charging the capacitor of the load input end through the MOSFET so as to ensure that uncontrollable surge current with large amplitude in the electrifying moment can be prevented; the capacitor between the triode c and the triode b in non-electrifying period discharges through the diodes and the triode c and the triode b; and when the spanning of the slope control circuit works normally, the Vgs slope control circuit ensures that the MOSFET is completely conducted and has the minimum power consumption.
Owner:上海英联电子系统有限公司 +1

Common-mode and differential-mode compensation for operational amplifier circuits

ActiveUS6867649B2Stabilize differential circuits without compromising performanceAmplifier modifications to reduce detrimental impedenceDifferential amplifiersAudio power amplifierEngineering
An amplifier is configured to provide both common-mode and differential-mode compensation to ensure stability in telecommunications circuits or other circuits where both common mode and differential mode signal paths are provided. The amplifier includes two interconnected operational amplifiers AMPA and AMPB. Common mode compensation is provided by connecting one or more capacitors with a total value CCOMMON connected from a gain node at the input of an inverter in one of the amplifiers AMPA or AMPB to the output of the inverter in the other amplifier. Differential mode compensation can be provided by connecting a capacitor with value CCOMP at the gain node of each of the amplifiers AMPA or AMPB. Alternatively, both differential mode and Miller effect compensation can be provided by connecting one or more capacitors with total value CCOMP from the input to the output of components forming the inverter in each of the amplifiers AMPA and AMPB. As a further alternative, differential mode compensation can is provided independent of common mode compensation by connecting a capacitor with value CDIFF between the outputs of the inverters of the amplifiers AMPA and AMPB.
Owner:INTERSIL INC

Digital intelligent driving device of high-power IGBT (insulated gate bipolar translator)

The invention relates to a digital intelligent driving device of a high-power IGBT (insulated gate bipolar translator). The digital intelligent driving device comprises a DC/DC (direct-current) conversion circuit, a CPLD (complex programmable logic device) logic control module, an active clamping feedback module, a retreating-protection over-current feedback module and a two-stage di/dt detecting module, wherein the output end of the DC/DC conversion circuit is connected with an undervoltage protection module; the output end of the undervoltage protection module is connected with the CPLD logic control module; and the input end of the CPLD logic control module is connected with a PWM (pulse-width modulation) pulse-width modulator, and the output end of the CPLD logic control module is connected with a variable-gate resistance module. The digital intelligent driving device provided by the invention has the advantages that the protection functions such as power isolation, over-current protection, di/dt and active clamping are integrated, the logic control is realized by adopting the programmable logic device CPLD, the ideal driving performance is achieved by real-time variable-gate resistance driving, and soft shut-off is realized by selecting proper shut-off resistance according to the over-current degree, so that the switching loss is effectively reduced and a Miller effect is weakened.
Owner:WUHAN ZHENGYUAN ELECTRIC

Reverse blocking type IGBT and manufacturing method therefor

The invention discloses a reverse blocking type IGBT and a manufacturing method therefor, and belongs to the technical field of a power semiconductor device. By introducing a floating P type body region on one side of a trench gate and introducing a trench collector structure in a collector region and a field stop layer, the positive breakdown voltage of a device is improved without influencing the threshold voltage and switch-on of an IGBT device; the gate-collector capacitance is lowered, and adverse influence caused by a Miller effect can be relieved; the overall gate capacitance is lowered, the switching speed of the device is improved, the switching loss of the device is lowered, and the compromising relation between forward switch-on voltage drop and switch-off loss of the conventional CSTBT device is improved; the problems of current, voltage oscillation and EMI in the device starting dynamic process can be avoided, and device reliability is improved; the current carrier enhancement effect at the emitter end of the device is improved, the current carrier concentration distribution in a drift region can be improved, and compromising between forward switch-on voltage drop andswitch-off loss can be further improved; and the reverse breakdown voltage of the device is improved, and high forward characteristic of the device is ensured while excellent reverse blocking performance is obtained.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Trench gate charge storage-type IGBT and manufacturing method thereof

The invention discloses a trench gate charge storage-type IGBT and a manufacturing method thereof, which belong to the technical field of power semiconductor devices. Through reasonably introducing asplit trench gate structure and an air floating P-type region, in a condition of not influencing the threshold voltage of the IGBT and conduction, Miller capacitance is reduced, and bad influences brought by Miller effects are improved; the overall gate capacitance is reduced, the device switching speed is improved, the switching losses of the device are reduced, and the compromise between forwardconduction voltage drop and turn-off losses of the traditional CSTBT structure is improved; current and voltage oscillations and EMI problems in the device dynamic starting process are avoided, and the device reliability is improved; electric field concentration effects at the bottom part of the trench are improved, and the breakdown voltage of the device is improved; carrier enhancement effectsat an emitter end of the device are improved, the carrier concentration distribution in a drift region is improved, and the compromise between forward condition voltage drop and turn-off losses is further improved; and besides, the manufacturing method disclosed in the invention has the advantages of low realization difficulty, high product rate and low cost.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Adaptive miller compensated voltage regulator

A linear voltage regulator includes a Miller frequency compensation having a movable zero, which tracks the frequency of the load pole as the load condition changes. The compensated voltage regulator maintains stability under variable load conditions. Because of the Miller effect, DC open-loop gain and bandwidth are not sacrificed for stability. The compensated voltage regulator can therefore maintain high power supply rejection ratio (PSRR).
Owner:STMICROELECTRONICS SHANGHAI R&D

Transconductance-capacitor compensation circuit for rolling over network

The invention relates to a turning network transconductor, namely a capacitance compensating circuit which comprises a main signal transconductor, a feedforward compensating transconductor, a compensating capacitor and a loading capacitor, wherein the main signal transconductor comprises N+1 main signal transconductance units which are in step linkage to form a main signal path, the feedforward compensating conductance comprises N feedforward compensating conductance units which are used for forming a left half-plane zero point and improving the phase margin, the compensating capacitor comprises N capacitors used for improving the stability of a high-conductance amplifier because the Miller effect enables main poles are separated from non-main poles, and the loading capacitor comprises a capacitor forming the pole of a conductance amplifier with a loading resistor. An RNGCC circuit provided by the invention effectively improves the phase margin, has simple structure and is suitable for the necessary low power supply voltage of the future CMOS technology, and the applying prospect is wide.
Owner:灿芯创智微电子技术(北京)有限公司

Bandwidth extension circuit of cascode trans-impedance amplifier based on CMOS (complementary metal oxide transistor) technology

The invention discloses a bandwidth extension circuit of a cascode trans-impedance amplifier based on CMOS (complementary metal oxide transistor) technology. The bandwidth extension circuit is of completely bilaterally symmetric structure; each of the left and right parts of the bandwidth extension circuit includes a traditional primary cathode-input amplifier, a novel cascode auxiliary amplifierand a terminal source follower; the novel cascode structure is used herein to assist the amplifiers in shielding Miller effect; the concurrent PMOS (P-channel metal oxide semiconductor) structure provides greater transconductance for the cathode-input NMOS (N-channel metal oxide semiconductor); stray capacitance is partially shielded with a Pi-shaped matching network shielding portion; the terminal source follower is added to isolate stray post-capacitance, and total bandwidth of the circuit herein is increased; the circuit herein helps effectively reduce input impedance via RGC structure, andinput capacitance that is mainly of photoelectric detector junction capacitance is better isolated; the circuit herein gains adjustment and optimization for component parameters; differential structure is utilized so that working bandwidth of the circuit herein is greatly widened.
Owner:TIANJIN UNIV
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