The invention discloses a distributed emitter follower
amplifier. N stages of transistors and N bias networks use an emitter follower
amplifier connection method; third ends (collectors or drains) ofeach stage of the transistors are also provided with a time-
delay network; each stage of time-
delay network compensates the phase of an output
signal of the third end of the respective stage field-effect tube, so that the output signals of second ends of each stage of the time-
delay network have the same phase, and the
maximum gain can be obtained by superimposing the output signals of each stageof the transistors. The circuit structure is simplified because no base / gate
artificial transmission line is existed; no base / gate absorption
resistor and no collector / drain absorption
resistor are existed, so that the output
signal of each stage is converted into a useful
signal, and the efficiency of the distributed emitter follower
amplifier is improved; moreover, in the circuit structure, as the
operating frequency increases, the output signals of the transistors of each stage are phase compensated, so that the final output signals have the same phase, and the high-frequency
gain is improved.