Darlington distributed power amplifier based on triode stacking technology

Abstract

The invention discloses a Darlington distributed power amplifier based on a triode stacking technology. The Darlington distributed power amplifier comprises a distributed stacked Darlington tube amplifying network, a stacked Darlington tube input distribution network and a stacked Darlington tube output synthesis network. The core architecture of the scheme of the invention adopts the distributedstacked Darlington tube amplifying network, wherein the amplifying network consists of at least three distributed stacked Darlington tubes based on a stacking technology; and meanwhile, the scheme ofthe invention considers the influence of the stacked Darlington tubes with a two-transistor stacking structure on the equivalent capacitance of artificial transmission lines, so that the accuracy of the circuit design can be greatly improved, the difficulty of debugging circuits in a later period can be reduced, the entire power amplifier can obtain good broadband power output capabilities and power gain capabilities, and the stability and reliability of the circuits can be improved.

Description

Technical field [0001] The invention relates to the field of heterojunction bipolar transistor radio frequency power amplifiers and integrated circuits, in particular to a distributed power amplifier with high efficiency, high output power and high gain for the application of the transmitting module at the end of an ultra-wideband transceiver. Background technique [0002] With the rapid development of electronic warfare, software radio, ultra-wideband communications, wireless local area network (WLAN) and other military electronic countermeasures and communications, and civilian communications markets, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the transmitter's radio frequency and microwave power amplifiers to have ultra-wideband, high output power, high efficiency, low cost and other performance, and the integrated circuit is the key technology that is expe...

AI Technical Summary

Problems solved by technology

[0004] (1) High-power high-efficiency amplification capability is limited: the characteristic frequency of transistors in semiconductor processes is getting higher and higher, which leads to low breakdown voltage and limits the power capacity of a single transistor

In order to obtain high power capability, multi-channel transistor power synthesis is often required, but the efficiency of the power amplifier is relatively low due to the energy loss of the multi-channel synthesis network, so the high power and high efficiency capabilities are poor

[0005] (2) Ultra-broadband high power amplification capability is limited: in order to meet the high power index, multiple transistor power synthesis is required, but the load impedance of multi-channel synthesis is greatly reduced, resulting in a very high impedance conversion ratio; in high impedance conversion ratio Realizing broadband characteristics is a great challenge

[0007] ① In the traditional distributed power amplifier, the core amplifier circuit is realized by multiple single transistors in a distributed amplification arrangement. Since the single transistor is affected by parasitic parameters, its power gain will be significantly reduced as the operating frequency increases. , At the same time, the power characteristics will be significantly deteriorated, so in order to obtain an ultra-wideband flat amplification structure, it is necessary to sacrifice low-frequency gain to balance high-frequency loss, resulting in very low ultra-wideband gain of traditional distributed amplifiers;

[0008] ②In order to improve the amplifier gain and improve the isolation, Cascode dual-transistor distributed amplification structure is also used. However, although the Cascode dual-transistor increases the circuit isolation, it cannot gain a significant deterioration with frequency, nor can it realize the Cascode dual-transistor. Optimum impedance matching, which reduces output power characteristics

[0009] It can be seen from this that the design difficulties of ultra-wideband RF power amplifiers based on integrated circuit technology are: high power output is difficult under ultra-wideband; there are many limitations in the traditional single transistor structure or the distributed amplification structure of Cascode transistors

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