Ultra-wideband gradient temperature compensation distributed microwave power amplification chip

Abstract

The invention discloses an ultra-wideband gradient temperature compensation distributed microwave power amplification chip, and belongs to the field of microwave radio frequency chips. The power amplifier comprises a cascode amplification structure, an input artificial transmission line and an output artificial transmission line, the cascode amplification structure comprises a plurality of stages of cascode amplification networks with the same structure, and the input end of each stage of cascode amplification network is connected with the input artificial transmission line. The output end of each stage of cascode amplification network is connected with the output artificial transmission line, and each stage of cascode amplification network comprises a cascode amplification unit, an RC stabilization unit, a first grid voltage temperature compensation voltage division unit, a grid-to-ground unit, a second grid voltage temperature compensation voltage division unit, a matching capacitor and a first bias resistor. The high-frequency gain and the power bandwidth are expanded through the transistors of which the sizes are reduced step by step and the independently matched artificial transmission lines, and the temperature compensation of the grid voltage of the transistors is realized by utilizing the resistance characteristics of different temperature coefficients.

Description

technical field [0001] The invention relates to the field of microwave radio frequency chips, in particular to an ultra-broadband gradient temperature-compensated distributed microwave power amplifying chip. Background technique [0002] Ultra-wideband microwave power amplifier chips are widely used in broadband systems such as wireless communication, ultra-wideband radar, and electronic countermeasures. Power amplifiers need to use large-sized transistors to obtain sufficient output power, but the parasitic resistance and parasitic capacitance of large-sized transistors will significantly deteriorate the operating bandwidth and amplification gain. The distributed amplification structure splits the transistor with a total gate width of Wch into N Wch / N smaller-sized transistors, uses the microstrip line to compensate the parasitic capacitance of each transistor, and realizes ultra-wideband based on N repeated amplification structures in parallel, which is At present, the ma...

AI Technical Summary

Problems solved by technology

[0003] The gate voltage of the traditional distributed amplification structure is controlled by the external feed unit, and the fluctuation of the external feed voltage may cause the chip operating point to deviate from the normal state

On the other hand, the DC and RF performance of transistors will change with temperature. If the gate voltage is not temperature compensated, the RF performance will deteriorate or even damage the chip.

[0004] For ultra-wideband amplifier chips with operating frequencies as low as 50MHz or lower, large-capacity DC blocking capacitors are often required, which usually cannot be integrated inside the chip. The system needs to add DC blocking capacitors outside the chip, which increases integration complexity and cost.

Images