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Distributed power amplifier

A power amplifier and distributed technology, which is applied in the direction of amplifiers, amplifiers with semiconductor devices/discharge tubes, electrical components, etc., can solve the problems that restrict the application of distributed amplifiers, and the output power of amplifiers does not appear in the circuit structure, so as to overcome the bandwidth Limitation, adjustable gain, and the effect of improving linearity

Inactive Publication Date: 2016-09-28
NANJING UNIV OF POSTS & TELECOMM
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AI Technical Summary

Problems solved by technology

Distributed amplifiers have advantages unmatched by other traditional amplifiers in extending the frequency bandwidth, but the current circuit structure and improvement technology of distributed amplifiers are mainly aimed at improving the gain and bandwidth performance of the amplifier, but have not yet appeared in terms of increasing the output power of the amplifier. Effective circuit structure and improved technology, thus restricting the application of distributed amplifiers as broadband power amplifiers

Method used

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Embodiment Construction

[0013] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0014] Distributed power amplifier circuit structure such as image 3 shown. A plurality of gain units connected in parallel are included between the input end and the output end, each of the gain units is respectively connected with an on-chip inductor at one end near the input end and one end near the output end, and each gain unit is composed of two sub-gain units, the sub-gain units The input terminals of the gain unit are connected to their respective input artificial transmission lines, and the output terminals are connected to the common output artificial transmission line; there are also t...

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Abstract

The invention discloses a distributed power amplifier, comprising multiple gain units connected in parallel between the input end and the output end, wherein each gain unit is composed of two sub-gain units, the each two adjacent gain units are connected by an inductor, the input impedances of the two sub-gain units of each gain unit and the inductors respectively connected with the input ends of the two sub-gain units jointly form two input artificial transmission lines, the output impedances of the two sub-gain units of each gain unit and the inductors respectively connected with the output ends of the two sub-gain units jointly form an output artificial transmission line, and inductors are further connected between two ends of the input and output artificial transmission lines. According to the distributed power amplifier, the output transmission lines of the two sub-gain units are combined, and thereby the limitation of the equivalent input capacitances of the gain units on the bandwidth of the distributed power amplifier is effectively overcome.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a distributed power amplifier. Background technique [0002] The working principle of the distributed amplifier is to use the parasitic capacitance of the transistor to form an artificial transmission line, so that it can break through the limitation of the gain-bandwidth product of the traditional amplifier, and obtain a large flatness in a wide frequency band (up to multiple times or even more than ten times the frequency). Gain, which has important academic value in the research field of broadband amplifiers for radio frequency and microwave circuits. The application fields of distributed amplifiers include high-speed links, broadband wireless transceivers, high-resolution radar and imaging systems, etc. The military and civilian markets are in great demand for them, such as Hittite microwave's HMC459, HMC464, HMC930 and HMC1022 series The chip is a broadband powe...

Claims

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Application Information

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IPC IPC(8): H03F3/213
CPCH03F3/213
Inventor 张瑛
Owner NANJING UNIV OF POSTS & TELECOMM
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