Power amplifier of distributed two-stack structure considering miller effect

Abstract

The invention discloses a power amplifier of a distributed two-stack structure considering a miller effect. The power amplifier comprises a distributed two-stack HiFET (High-Impedance, High-Voltage field-effect transistor) amplification network, bias voltage, a grid electrode artificial transmission line considering the miller effect, and a drain electrode artificial transmission line considering the miller effect. According to the power amplifier provided by the invention, a core framework adopts the distributed two-stack HiFET amplification network, which is formed by at least three two-stack HiFET structures; meanwhile, the influence of the miller effect of a two-transistor stack structure on equivalent capacitance of the artificial transmission lines is considered, the accuracy of a circuit design is improved, and the difficulty in later debugging of the circuit is reduced, so that the whole power amplifier acquires a favorable broadband power output capability and a power gain capability, a low breakdown voltage characteristic of an integrated circuit process is avoided, and the stability and the reliability of the circuit are improved.

Description

technical field [0001] The invention relates to the field of field effect transistor radio frequency power amplifiers and integrated circuits, in particular to a distributed power amplifier with high efficiency, high output power and high gain applied to a transmitting module at the end of an ultra-wideband transceiver. Background technique [0002] With the rapid development of electronic warfare, software radio, ultra-wideband communication, wireless local area network (WLAN) and other military electronic countermeasures and communication, and civil communication markets, RF front-end transceivers are also developing in the direction of high performance, high integration and low power consumption. Therefore, the market urgently needs RF and microwave power amplifiers for transmitters with ultra-wideband, high output power, high efficiency, and low cost, and integrated circuits are the key technology that is expected to meet this market demand. [0003] However, when the in...

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Problems solved by technology

[0004] (1) High-power and high-efficiency amplification capability is limited: the gate length of transistors in semiconductor processes is getting shorter and shorter, resulting in low breakdown voltage and high knee point voltage, which limits the power capacity of a single transistor

In order to obtain high power capability, multi-channel transistor power synthesis is often required, but the efficiency of the power amplifier is relatively low due to the energy loss of the multi-channel synthesis network, so the high power and high efficiency capabilities are poor

[0005] (2) Ultra-broadband high-power amplification capability is limited: in order to meet the high power index, multiple transistor power synthesis is required, but the load impedance of multi-channel synthesis is greatly reduced, resulting in a high impedance transformation ratio; in high impedance transformation ratio Realizing broadband characteristics is a great challenge

[0007] ①In the traditional distributed power amplifier, the core amplification circuit is realized by a distributed amplification arrangement of multiple single field-effect transistor FETs (field-effect transistors). On the low side, the isolation is poor, which also leads to the deterioration of the reflection characteristics, thereby reducing the synthesis efficiency;

[0008] ②In the design of traditional distributed amplifiers, for the sake of simple analysis, the influence of Miller capacitance on the circuit is often ignored, resulting in a large amount of work for circuit debugging after the circuit structure design is completed, which consumes a lot of manpower and material resources, and reduces the efficiency of circuit design. ;

[0009] ③In addition, in order to reduce the influence of the Miller effect on the circuit, Cascode dual-transistor distributed amplification structure is also used. However, although the Cascode dual-transistor increases the circuit isolation, it cannot improve the power gain and other indicators, nor can it realize the Cascode dual-transistor. The best impedance matching, which reduces the output power characteristics

However, although the output power is high, the existing stacked amplifiers are often implemented with a single HiFET structure, and their bandwidth characteristics still have a large gap compared with traditional single-transistor distributed amplifiers.

[0011] It can be seen from this that the design difficulties of ultra-wideband RF power amplifiers based on integrated circuit technology are: high power output and high power gain under ultra-wideband are difficult; there are many limitations in the distributed amplification structure of a single HiFET structure or Cascode transistors

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