46903 results about "Pre treatment" patented technology

Systems and methods for prophylactic measures aimed at improving wound repair. In some embodiments, laser-mediated preconditioning would enhance surgical wound healing that was correlated with hsp70 expression. Using a pulsed laser (λ=1850 nm, Tp=2 ms, 50 Hz, H=7.64 mJ/cm²) the skin of transgenic mice that contain an hsp70 promoter-driven luciferase were preconditioned 12 hours before surgical incisions were made. Laser protocols were optimized using temperature, blood flow, and hsp70-mediated bioluminescence measurements as benchmarks. Bioluminescent imaging studies in vivo indicated that an optimized laser protocol increased hsp70 expression by 15-fold. Under these conditions, healed areas from incisions that were laser-preconditioned were two times stronger than those from control wounds. Our data suggest that these methods can provide effective and improved tissue-preconditioning protocols and that mild laser-induced heat shock that correlated with an expression of Hsp70 may be a useful therapeutic intervention prior to or after surgery.

Embodiments of the invention provide treatment processes to reduce substrate contamination during a fabrication process within a vapor deposition chamber. A treatment process may be conducted before, during or after a vapor deposition process, such as an atomic layer deposition (ALD) process. In one example of an ALD process, a process cycle, containing an intermediate treatment step and a predetermined number of ALD cycles, is repeated until the deposited material has a desired thickness. The chamber and substrates may be exposed to an inert gas, an oxidizing gas, a nitriding gas, a reducing gas or plasmas thereof during the treatment processes. In some examples, the treatment gas contains ozone, water, ammonia, nitrogen, argon or hydrogen. In one example, a process for depositing a hafnium oxide material within a batch process chamber includes a pretreatment step, an intermediate step during an ALD process and a post-treatment step.

A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

This invention discloses a cost-effective process for separating contaminants and a wide-range of fouling material from surface water, ground water and from industrial effluents. Having undergone effective pre-treatment, the water can be purified further by using high-surface area spirally wound micro-filtration (MF), ultra-filtration (UF), nano-filtration (NF) or reverse osmosis (RO) membranes. High-quality potable water free from pathogen and other contaminants is thus produced at low-cost from the pre-treated surface water and ground-water. Conversely, pre-treated industrial effluents are further purified at a relatively low-cost using NF or RO membranes, thus producing water suitable for recycle or surface discharge. The process of this invention uses cationic inorganic and/or polymeric flocculants to coagulate and flocculate the water-borne colloidal matter (e.g. clays, iron hydroxides, naturally occurring matter (NOM's), etc.), followed by filtration using a multi-media filter, charge neutralization and reversal and final filtration using a 5-micron cartridge filter. These pre-treatment steps provides a good quality water having a low Silt Density Index and a significant negative zeta potential, thereby ensuring against irreversible chemical fouling of the spirally-wound membranes.

The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.

A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.

Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

Techniques are provided for generating three-dimensional images, such as may be used in mammography. In accordance with these techniques, projection images of an object of interest are acquired from different locations, such as by moving an X-ray source along an arbitrary imaging trajectory between emissions or by individually activating different X-ray sources located at different locations relative to the object of interest. The projection images may be reconstructed to generate a three-dimensional dataset representative of the object from which one or more volumes may be selected for visualization and display. Additional processing steps may occur throughout the image chain, such as for pre-processing the projection images or post-processing the three-dimensional dataset.

It includes the stages of grinding the lignocellulosic biomass to a size of 15-30 mm, subjecting the product obtained to steam explosion pre-treatment at a temperature of 190-230° C. for between 1 and 10 minutes in a reactor (2), collecting the pre-treated material in a cyclone (3) and separating the liquid and solid fractions by filtration in a filter press (9), introducing the solid fraction in a fermentation deposit (10), adding a cellulase at a concentration of 15 UFP per gram of cellulose and 12.6 International Units of β-glucosidase enzyme dissolved in citrate buffer pH 4.8, inoculating the fermentation deposit (10) with a culture of the heat-tolerant bacteria Kluyveromyces marxianus CECT 10875, obtained by chemical mutagenesis from strain DER-26 of Kluyveromyces marxianus and shaking the mixture for 72 hours at 42° C.

The present invention is a method, process and apparatus for selective cleaning, drying, and modifying substrate surfaces and depositing thin films thereon using a dense phase gas solvent and admixtures within a first created supercritical fluid antisolvent. Dense fluids are used in combination with sub-atmospheric, atmospheric and super-atmospheric plasma adjuncts (cold and thermal plasmas) to enhance substrate surface cleaning, modification, precision drying and deposition processes herein. Moreover, conventional wet cleaning agents such as hydrofluoric acid and ammonium fluoride may be used with the present invention to perform substrate pre-treatments prior to precision drying and cleaning treatments described herein. Finally, dense fluid such as solid phase carbon dioxide and argon may be used as a follow-on treatment or in combination with plasmas to further treat a substrate surface.

An image-guided radiosurgery method and system are presented that use 2D/3D image registration to keep the radiosurgical beams properly focused onto a treatment target. A pre-treatment 3D scan of the target is generated at or near treatment planning time. A set of 2D DRRs are generated, based on the pre-treatment 3D scan. At least one 2D x-ray image of the target is generated in near real time during treatment. The DRRs are registered with the x-ray images, by computing a set of 3D transformation parameters that represent the change in target position between the 3D scan and the x-ray images. The relative position of the radiosurgical beams and the target is continuously adjusted in near real time in accordance with the 3D transformation parameters. A hierarchical and iterative 2D/3D registration algorithm is used, in which the transformation parameters that are in-plane with respect to the image plane of the x-ray images are computed separately from the out-of-plane transformation parameters.

The invention provides an identification method, which performs identification by using an electrocardio (ECG) signal. The method comprises the following steps of: (a) ECG signal collection; (b) ECG signal pre-treatment, wherein the collected ECG signal is filtered; (c) characteristic extraction, wherein the characteristics of the ECG signal are extracted to build an identification characteristic vectors and the built identification characteristic vectors comprise analysis characteristics, presentative characteristics, transformation-domain characteristics and fusion characteristics; (d) identification process, wherein the identification characteristic vectors of a person to be identified is compared with the identification characteristic vectors which are pre-stored in an ECG characteristic template base; and (e) result output. The invention also provides an identification system using the identification method.